CAREER: 3D Optoelectronic Devices Fabricated via 2-Color Photo-inhibition/initiation Lithography

职业：通过 2 色光抑制/引发光刻技术制造 3D 光电器件

• 批准号: 0954202
• 负责人: Robert McLeod
• 金额: $ 40万
• 依托单位: University of Colorado at Boulder
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-02-01 至 2015-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0954202&HistoricalAwards=false
• 关键词: CAREER; 3D; Optoelectronic; Devices; Fabricated

ObjectiveTraditional photolithography begins with single-photon absorption of patterned light by a photo-initiator to locally expose a resist. In two-color photo-inhibition/initiation (2PII) lithography, these exposed regions are confined by a surrounding pattern of inhibitors generated by one-photon absorption of a second color in a photo-inhibitor. The specific research goal of this proposal is to test the conjecture that the resolution limit of 2PII lithography is enforced by inhibitor diffusion. This will be accomplished by incorporating the 2PII chemistry into thick, solid resists which self-develop index structures in response to 3D direct-write lithography. The resulting solid, photo-patternable materials are foundations for 3D optoelectronic devices in the areas of silicon photonics packaging and high-performance data storage.Intellectual MeritThe current generations of both semiconductor lithography and optical data storage are at the technological limits of resolution. Although these applications are at opposite ends of the cost spectrum, both industries share an uncertain future in the face of the diffraction limit. By combining 3D resolution superior to existing nonlinear absorption methods with the high sensitivity of photo-resist, the proposed lithography method has the potential to transform optoelectronic micro- and nano-fabrication across a broad spectrum of technologies.Broader ImpactThe research will be integrated into education via the development of an undergraduate optics sequence featuring senior-level design, fabrication and test of 3D optoelectronic and nanophotonic circuitry via software-controlled lithography and self-developing materials. This sequence will be founded on teaching methods featuring design as the core skill of engineering

传统的光刻开始于光引发剂对图案化光的单光子吸收，以局部曝光抗蚀剂。 在双色光抑制/引发（2 PII）光刻中，这些曝光区域由光抑制剂中第二颜色的单光子吸收产生的抑制剂的周围图案限制。 本提案的具体研究目标是测试2 PII光刻的分辨率极限由抑制剂扩散强制执行的猜想。 这将通过将2 PII化学物质结合到厚的固体抗蚀剂中来实现，所述抗蚀剂响应于3D直写光刻而自显影索引结构。由此产生的固体，photo-patternable材料是硅光子封装和高性能数据存储领域的3D光电器件的基础。智力MeritThe当前几代半导体光刻和光学数据存储都处于分辨率的技术极限。 虽然这些应用在成本谱的两端，但在衍射极限面前，这两个行业都有着不确定的未来。通过将上级现有非线性吸收方法的3D分辨率与光刻胶的高灵敏度相结合，所提出的光刻方法有可能在广泛的技术范围内改变光电微米和纳米制造。更广泛的影响通过开发具有高级设计的本科光学序列，通过软件控制的光刻和自开发材料制造和测试3D光电和纳米光子电路。 这一系列课程将建立在以设计为工程核心技能的教学方法之上