Collaborative Research: High-performance III-V nanowire FETs enabled by controlled MOCVD growth and ALD high-K passivation

合作研究：通过受控 MOCVD 生长和 ALD 高 K 钝化实现高性能 III-V 纳米线 FET

• 批准号: 1001564
• 负责人: Peide Ye
• 金额: $ 12万
• 依托单位: Purdue University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-08-15 至 2013-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1001564&HistoricalAwards=false
• 关键词: Collaborative; Research; performance; III; nanowire

The objective of this research is to explore the growth mechanism and transport properties of a novel type of III-V semiconductor nanowires and establish it as a viable nanotechnology building block that is suitable for high performance metal-oxide field effect transistor devices in a scalable and integrable fashion. The approach is to grow nanowire transistor with precise alignment and tailored lateral doping profile through controlled metalorganic chemical vapor deposition on appropriate substrates, passivate by atomic layer deposited high-k dielectrics, and transfer-print to desired substrates for heterogeneous integration. The intellectual merit of this research is to open up a new direction in III-V device possibilities using the self-aligned planar geometry; and fundamentally advance the understanding of 1D semiconductor epitaxial growth aspects from nucleation, propagation, to dopant incorporation and activation at the nanometer scale, as well as surface states and Fermi level pinning and unpinning effect on carrier transport properties at nano-scale dimensions. The broader impact of this research is to accelerate the advancement of fundamental nano concepts into engineering solutions by making the bottom-up nanowire growth method compatible with the manufacturable planar processing technology; to attract and retain women engineers and reduce attrition rate at the master degree level through active mentoring and community building; and to cultivate environment for elementary school girls to defy negative stereotype and confidently stay on track for a career in science and engineering.

本研究的目的是探索一种新型III-V型半导体纳米线的生长机制和输运特性，并将其作为一种可行的纳米技术构建块，以可扩展和可集成的方式适用于高性能金属氧化物场效应晶体管器件。该方法是通过在适当的衬底上控制金属有机化学气相沉积，通过沉积高k介电体的原子层钝化，并转移打印到所需的衬底上进行异质集成，从而生长出具有精确对准和定制横向掺杂轮廓的纳米线晶体管。本研究的智力价值在于利用自对准平面几何结构开辟了III-V器件可能性的新方向；从纳米尺度上对一维半导体外延生长的成核、扩展、掺杂和活化，以及表面态和费米能级对载流子输运性质的钉扎和解钉效应的理解，从根本上推进了对纳米尺度上载流子输运性质的理解。本研究的更广泛的影响是，通过使自下而上的纳米线生长方法与可制造的平面加工技术兼容，加速了基本纳米概念向工程解决方案的推进；通过积极的辅导和社区建设，吸引和留住女工程师，降低硕士学位水平的流失率；并为小学女生营造一种环境，让她们能够挑战负面的刻板印象，自信地走上科学和工程领域的职业道路。