GaAs MOSFETs with ALD Gate Stacks

超薄原子层沉积（ALD）高k栅极介电体的GaAs mosfet。speide Ye， Purdue University和James Hwang， Lehigh University .本研究的目标包括GaAs金属氧化物半导体场效应晶体管和基于这些晶体管的互补金属氧化物半导体集成电路技术。该方法主要是在Al2O3栅极绝缘子上形成原子层沉积。本研究的智力价值包括需要加强对化合物半导体上原子层沉积形成的介电体的基本科学理解和工程基础，以及用于数字应用的GaAs金属氧化物半导体场效应晶体管的新器件结构和工艺。研究了在GaAs表面制备、生长起始、原子层沉积和沉积后退火的不同条件。详细的材料表征技术，如卢瑟福后向散射、x射线光电子能谱、扫描隧道显微镜和原子力显微镜，将用于了解沉积过程和产生的纳米结构，包括绝缘体和半导体之间的界面。这项研究产生的更广泛的影响包括集成电路技术的持续缩放，朝着更小的尺寸，更快的速度和更复杂的功能。PI和合作PI致力于综合研究和教育。将作出特别努力，招募代表性不足的群体参加这项研究。一个面向高中和本科生的教育项目将作为虚拟纳米和生物设备分析实验室的一部分进行开发，该实验室将通过万维网提供。开发的协议也将作为普渡大学nsf支持的纳米中心网络的一部分。

GaAs MOSFETs with Ultrathin Atomic Layer Deposited (ALD) High-k Gate DielectricsPeide Ye, Purdue University and James Hwang, Lehigh UniversityThe objective of this research includes GaAs metal-oxide-semiconductor field-effect-transistors and complimentary metal-oxide-semiconductor integrated circuit technology based on these transistors. The approach is mainly based on Al2O3 gate insulator formed by atomic layer deposition.The intellectual merit of this research includes the requirement to strengthen the fundamental scientific understanding and engineering foundations of dielectrics formed by atomic layer deposition on compound semiconductors, as well as novel device structures and processes of GaAs metal-oxide-semiconductor field-effect-transistors for digital applications. Different conditions for surface preparation, growth initiation, atomic layer deposition, and post-deposition annealing of Al2O3 and Ga2O3 on GaAs will be investigated. Detailed material characterization techniques such as Rutherford backscattering, X-ray photoelectron spectroscopy, scanning tunneling microscopy, and atomic-force microscopy will be used to understand the deposition process and the resulted nanostructure, including the interface between the insulator and the semiconductor.The broader impacts resulting from this research include continued scaling of the integrated circuit technology toward smaller size, faster speed, and more sophisticated functionality. The PI and co-PI are committed to integrated research and education. Special efforts will be made to recruit underrepresented groups to participate in this research. An educational program for high school and undergraduate students will be developed as part of a virtual nano- and bio-devices analysis lab that will be available through World-Wide Web. The protocols developed will be also included as part of the NSF-supported Nano-Hub Network at Purdue.