EAGER: Electrical Properties of 2D Phosphorene

获奖摘要标题：2D PhosphorenePI的电学性质：Peide Ye，普渡大学非技术：PI为一种来自黑磷的新型2D单层材料创造了Phosphorene这个名字。与石墨烯不同，磷烯具有固有的、直接的和明显的带隙，并且与二硫化钼或其他过渡金属二硫族化合物不同，磷烯的载流子迁移率可以达到10,000 cm2/Vs。因此，磷烯可以潜在地克服所有其他二维材料在超薄体晶体管应用中的挑战，从而改变电子工业。他的团队是世界上第一个成功地从黑磷中剥离单层磷烯，并展示了在少层磷烯上有前途的晶体管性能的团队。自PIs最初的工作以来，人们对探索膦烯的性质和应用产生了极大的兴趣。在这个EAGER项目中，PI将专注于通过剥离探索磷烯，并研究该研究的电学性质和器件集成方面。技术：作为唯一一种可以像石墨烯一样剥离的元素材料，磷烯具有固有的、直接的、可观的带隙和高载流子迁移率，作为下一代设备的基础材料，它代表了一个独特的机会。PI通过剥离的初步探索将指导开发高质量，无缺陷的材料和工艺，使其能够安全，轻松地集成到设备架构中。此外，磷烯的高度褶皱结构决定了每一层由两个紧密结合的原子层组成，这一特性可以在未来用于开发大规模的气相沉积制造工艺。褶皱结构也使磷烯具有高度的各向异性，可以用于电热应用。为了降低磷烯的环境敏感性并探索其他新的结构和性质，将探索磷烯与石墨烯、氢氮化硼、二硫化钼或其他硫族化合物和氧化物之间的异质结。例如，与大多数其他二维材料不同，磷烯天然为p型，p型磷烯晶体管可以与n型MoS2晶体管组合，形成高能效的CMOS电路和二维隧道场效应晶体管。PI不仅将促进参与拟议项目的人力资源的多样性，而且还将扩大在定义和解决有关磷烯的重要研究问题方面的思想、观念和方法的多样性。PI致力于整合研究和教育，并制定了详细的计划，以提高工程的多样性。PI计划将研究与2D材料和设备的课程开发结合起来，以扩大研究的影响。

Award Abstract Title: Electrical Properties of 2D PhosphorenePI: Peide Ye, Purdue University Non-technical: The PI has coined the name Phosphorene for a new 2D single-layer material derived from black phosphorus. Phosphorene, unlike graphene, has an inherent, direct and appreciable bandgap and, unlike MoS2 or other transition-metal dichalcogenides, can have carrier mobility on the order of 10,000 cm2/Vs. Thus, phosphorene can potentially overcome the challenges of all other 2D materials for ultra-scaled thin-body transistor applications thereby transforming the electronics industry. His group is the first in the world to successfully exfoliate single-layer phosphorene from black phosphorus and to demonstrate promising transistor performance on few-layer phosphorene. Since the PIs initial work, there is a great deal of interest that has been generated on exploring the properties and applications of phosphorene. In this EAGER project, the PI will focus on the exploration of phosphorene by exfoliation and investigate the electrical properties and device integration aspects of the research. Technical: Being the only other elemental material that can be exfoliated like graphene and with an inherent, direct and appreciable bandgap and high carrier mobility, phosphorene represents a unique opportunity as the basic material for next generation devices. The PI's initial exploration through exfoliation will guide the development for high-quality, defect-free materials and processes that enable safe and easy integration into device architectures. Additionally, the highly puckered structure of phosphorene dictates that each single layer comprises two tightly bonded atomic layers a property that can be exploited to develop a large-scale vapor-phase-deposition manufacturing process in future. The puckered structure also makes phosphorene highly anisotropic a property that can be exploited for electrothermal applications. To reduce the environmental sensitivity of phosphorene and to explore other novel architectures and properties, heterojunctions between phosphorene and graphene, h-BN, MoS2, or other chalcogenides and oxides will be explored. For example, unlike most other 2D materials, phosphorene is naturally p-type, and p-type phosphorene transistors can be combined with n-type MoS2 transistors to form energy-efficient CMOS circuits and 2D tunneling field-effect transistors. The PI will not only promote diversity in the human resources engaged in the proposed project, but will also expand on the diversity of thought, ideas, and approaches in defining and solving important research questions concerning phosphorene. The PI is committed to integrating research and education, and has detailed plans to enhance diversity in engineering. The PI plans to integrate research with curriculum development on 2D materials and devices to broaden the impact of the research.