Collaborative: Mixed Anion and Cation Based Transistor Architecture for Ultra-Low Power Complementary Logic Applications

协作：用于超低功耗互补逻辑应用的混合阴离子和阳离子晶体管架构

• 批准号: 1028807
• 负责人: Suman Datta
• 金额: $ 24.11万
• 依托单位: Pennsylvania State Univ University Park
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-10-01 至 2014-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1028807&HistoricalAwards=false
• 关键词: Collaborative; Mixed; Anion; Cation; Based

Research objectives and approaches: The objective of this research is materials, device and circuit based co-exploration of mixed-anion and mixed-cation compound semiconductor based transistors for energy-efficient computing. The approach is a) experimental investigation of n-channel mixed anion (InAsxSb1-x) quantum-well transistors and p-channel mixed cation (InyGa1-ySb) transistors to address dynamic power consumption in complementary logic and RF circuits; b) experimental investigation of mixed-anion and cation based tunnel transistors to address stand-by power consumption in logic and embedded memory circuits, and c) development of design toolkit to enable heterogeneous circuit implementation with emerging devices. Intellectual merit: The key scientific merits of this proposal are: i) Harnessing the excellent electron and hole transport properties in mixed-anion and mixed-cation antimonide material system to provide ultra-low power transistor solutions. We investigate mixed-anion material, InAsxSb1-x with varying As and Sb mole fraction, to achieve high electron mobility (13,000 cm2V-1s-1) to demonstrate n-channel quantum-well FETs (QWFETs). We explore mixed-cation materials, InyGa1-ySb to maximize hole mobility (2,000 cm2V-1s-1) by varying In and Ga mole fractions to enable band-gap engineered p-channel QWFETs; Device layer design is done with the primary goal of achieving a common high-k dielectric gate solution for both n-channel and p-channel QWFETs; ii) Harnessing the availability and tunability of staggered band-edge lineup in the mixed anion-cation antimonide material system to explore tunnel transistor (TFET) architecture with steep switching characteristics to address stand-by energy consumption; iii) Exploration of a heterogeneous system via implementation of speed critical, high activity logic circuits using QWFETs and low activity factor circuits using Tunnel FETs. This investigation will expand our fundamental understanding of the material science of mixed-anion and mixed-cation based material systems, novel QWFET and TFET device configurations and implementation of energy efficient logic elements, interconnect fabric and embedded memory. Broader Impact: The proposed research directly addresses the quest in the semiconductor industry for longer term solutions to technology scaling and addressing energy efficiency. The outcome of this research will have a direct impact on the future of ?green? nanoelectronics and many-core processor architecture design. A broader impact of successful development of the underlying materials, novel device architectures and energy efficient circuits with several orders of magnitude reduced energy consumption than today?s available electronics can usher in a new generation of implantable medical electronics needed for health monitoring and nanomedicine applications. Throughout the project, the key results will be disseminated via a dedicated WIKI web portal and via existing Penn State MRSEC-related outreach channels.

研究目标和方法：本研究的目标是基于材料、器件和电路的混合阴离子和混合阳离子化合物半导体晶体管的节能计算的共同探索。该方法是a)实验研究n通道混合阴离子（inasxs_1 -x）量子阱晶体管和p通道混合阳离子（InyGa1-ySb）晶体管，以解决互补逻辑和射频电路中的动态功耗问题；B)对基于阴离子和阳离子的混合隧道晶体管进行实验研究，以解决逻辑和嵌入式存储电路中的待机功耗问题；c)开发设计工具包，使新兴器件能够实现异构电路。智力优势：本提案的主要科学优点是：i)利用混合阴离子和混合阳离子锑化材料体系中优异的电子和空穴输运特性，提供超低功耗晶体管解决方案。我们研究了具有不同As和Sb摩尔分数的混合阴离子材料InAsxSb1-x，以实现高电子迁移率（13,000 cm2V-1s-1）来演示n通道量子阱场效应管（qwfet）。我们探索混合阳离子材料InyGa1-ySb，通过改变In和Ga的摩尔分数来最大化空穴迁移率（2,000 cm2V-1s-1），从而实现带隙工程p沟道qwfet；器件层设计的主要目标是为n沟道和p沟道qwfet实现通用的高k介电栅极解决方案；ii)利用混合阴离子-阳离子锑化材料体系中交错带边阵容的可用性和可调性，探索具有陡峭开关特性的隧道晶体管（TFET）架构，以解决待机能耗问题；iii)通过使用qwfet实现速度关键、高活度逻辑电路和使用隧道fet实现低活度因数电路来探索异构系统。这项研究将扩展我们对混合阴离子和混合阳离子基材料系统，新型QWFET和TFET器件配置以及节能逻辑元件，互连结构和嵌入式存储器的材料科学的基本理解。更广泛的影响：拟议的研究直接解决了半导体行业对技术扩展和解决能源效率的长期解决方案的追求。这项研究的结果将直接影响到绿色环保的未来。纳米电子学与多核处理器架构设计。基础材料、新型器件架构和节能电路的成功开发产生的更广泛的影响，其能耗比今天降低了几个数量级？现有的电子设备可以引领健康监测和纳米医学应用所需的新一代植入式医疗电子设备。在整个项目中，关键结果将通过专门的WIKI门户网站和现有的宾夕法尼亚州立大学mrsec相关的外展渠道进行传播。