Collaborative Research: DMREF: Accelerated Design, Discovery, and Deployment of Electronic Phase Transitions (ADEPT)

合作研究:DMREF:电子相变的加速设计、发现和部署 (ADEPT)

基本信息

  • 批准号:
    2324175
  • 负责人:
  • 金额:
    $ 40万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2023
  • 资助国家:
    美国
  • 起止时间:
    2023-10-01 至 2027-09-30
  • 项目状态:
    未结题

项目摘要

Non-Technical Description:The world has seen an enormous increase in global connectivity, information processing, and information storage driven by advances in technologies that rely largely on traditional semiconductors. Their underlying material platforms, however, are facing enormous challenges. A future generation of electronic devices can be established using materials which exist in multiple electronic states. Materials and devices that can be switched from an insulator to a metal by an external trigger would revitalize the U.S. semiconductor ecosystem, providing new paths to low-power computing systems and integration into systems for 6G and beyond applications. The project goal is to design and discover materials exhibiting such insulator-to-metal transitions (IMT) that enable room-temperature operation and display large changes in electrical resistivity. The research team, which comprises interdisciplinary expertise in computational and experimental materials physics, data science, and device engineering, aims to enable a culture shift in materials research, development, and deployment through training a well-equipped and diverse workforce with proficiencies in data-driven discovery of advanced materials. Leveraging Materials Genome Initiative principles, the team will deliver a tightly integrated codesign methodology to facilitate modeling and synthesis of new IMT materials with superior properties, and ultimately guide the design towards record-setting device performance to strengthen American leadership in future computing, storage and communication technologies and industries. Technical Description:The goal of the Accelerated Design, Discovery, and Deployment of Electronic Phase Transitions (ADEPT) project is to implement an accelerated discovery and codesign engine for efficient deployment of insulator-metal transition (IMT) materials traditionally marred by sparse prior data and system-level constraints. Achieving this goal requires moving beyond conventional, linear approaches to materials discovery, transforming them into a cyclic and iterative process. The project formulates new computational approaches that fuse computational data with high-throughput materials synthesis and characterization data to overcome key challenges of (i) Materials Discovery from Sparse & Expensive Data, (ii) Efficient Decoding of High-Dimensional Experimental Data, and (iii) Property-Performance Mismatch upon Integration. Their confluence hinders the advancement of novel material platforms for future microelectronic and wireless communication technologies. The project goal will be executed by creating integrated protocols that transform the standard sequential discovery steps (hypothesis generation, synthesis, characterization) into closed-loops fashioned to overcome these challenges: (1) AI-Aided Virtual Screening and Adaptive Discovery, (2) Accelerated Synthesis and Characterization Analytics, and (3) Materials Integration, Device Fabrication, and Codesign. Success with this framework will allow for the realization of material objectives within device constraints and deliver the following outcomes: (1) new classes of single and two-phase IMT materials (2) distributed in open-access databases, (3) theories of IMT behavior, (4) novel IMT thin film synthesis methods, (5) contactless characterization methods to improve throughput, (6) adaptive learning methods to achieve codesigned materials and devices, and (7) quantitative understanding of device performance to benefit future scalability and manufacturing with industrial partners.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
非技术性描述:在主要依赖传统半导体的技术进步的推动下,全球连接、信息处理和信息存储领域的发展突飞猛进。然而,其基础材料平台正面临巨大挑战。未来一代的电子器件可以使用以多种电子状态存在的材料来建立。可以通过外部触发器从绝缘体切换到金属的材料和设备将振兴美国半导体生态系统,为低功耗计算系统提供新的途径,并集成到6 G及其他应用的系统中。该项目的目标是设计和发现具有这种绝缘体-金属转变(IMT)的材料,使其能够在室温下工作并显示电阻率的巨大变化。该研究团队包括计算和实验材料物理学,数据科学和设备工程方面的跨学科专业知识,旨在通过培训一支装备精良的多元化员工队伍,实现材料研究,开发和部署的文化转变。利用材料基因组计划的原则,该团队将提供一种紧密集成的协同设计方法,以促进具有上级性能的新型IMT材料的建模和合成,并最终引导设计实现创纪录的设备性能,以加强美国在未来计算,存储和通信技术和行业的领导地位。电子相变加速设计、发现和部署(ADEPT)项目的目标是实现一个加速发现和协同设计引擎,以有效部署绝缘体-金属过渡(IMT)材料,这些材料传统上受到稀疏先验数据和系统级约束的影响。实现这一目标需要超越传统的线性材料发现方法,将其转变为循环和迭代的过程。该项目制定了新的计算方法,将计算数据与高通量材料合成和表征数据融合,以克服以下关键挑战:(i)从稀疏昂贵数据中发现材料,(ii)高维实验数据的有效解码,以及(iii)集成时的性能不匹配。它们的融合阻碍了未来微电子和无线通信技术新型材料平台的发展。该项目的目标将通过创建集成协议来执行,该协议将标准的顺序发现步骤(假设生成,合成,表征)转换为闭环,以克服这些挑战:(1)AI辅助虚拟筛选和自适应发现,(2)加速合成和表征分析,以及(3)材料集成,设备制造和协同设计。该框架的成功将允许在器械限制范围内实现实质性目标,并提供以下结果:(1)单相和两相IMT材料的新类别,(2)分布在开放访问数据库中,(3)IMT行为的理论,(4)新颖的IMT薄膜合成方法,(5)提高产量的非接触表征方法,(6)自适应学习方法,以实现共同设计的材料和设备,(七)该奖项反映了NSF的法定使命,并通过使用基金会的知识价值和更广泛的影响审查进行评估,被认为值得支持的搜索.

项目成果

期刊论文数量(0)
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Suman Datta其他文献

Design of Nonvolatile SRAM with Ferroelectric FETs for Energy-Efficient Backup and Restore
用于节能备份和恢复的具有铁电 FET 的非易失性 SRAM 设计
  • DOI:
    10.1109/ted.2017.2707664
  • 发表时间:
    2017-06
  • 期刊:
  • 影响因子:
    3.1
  • 作者:
    Xueqing Li;Kaisheng Ma;Sumitha George;Win-San Khwa;John Sampson;Sumeet Gupta;Yongpan Liu;Meng-Fan Chang;Suman Datta;Vijaykrishnan Narayanan
  • 通讯作者:
    Vijaykrishnan Narayanan
26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer
蓝宝石外延 VO2 (VOS) 晶圆上的 26.5 太赫兹电触发射频开关
  • DOI:
  • 发表时间:
    2015
  • 期刊:
  • 影响因子:
    0
  • 作者:
    H. Madan;H. Zhang;M. Jerry;Debangshu Mukherjee;Nasim Alem;Roman Engel;Suman Datta
  • 通讯作者:
    Suman Datta
Ten nanometre CMOS logic technology
十纳米互补金属氧化物半导体逻辑技术
  • DOI:
    10.1038/s41928-018-0137-6
  • 发表时间:
    2018-09-13
  • 期刊:
  • 影响因子:
    40.900
  • 作者:
    Suman Datta
  • 通讯作者:
    Suman Datta
Advancing Nonvolatile Computing With Nonvolatile NCFET Latches and Flip-Flops
利用非易失性 NCFET 锁存器和触发器推进非易失性计算
  • DOI:
    10.1109/tcsi.2017.2702741
  • 发表时间:
    2017-06
  • 期刊:
  • 影响因子:
    5.1
  • 作者:
    Xueqing Li;Sumitha George;Kaisheng Ma;Wei-Yu Tsai;Ahmedullah Aziz;John Sampson;Sumeet Kumar Gupta;Meng-Fan Chang;Yongpan Liu;Suman Datta;Vijaykrishnan Narayanan
  • 通讯作者:
    Vijaykrishnan Narayanan
Amorphous Ta<sub>2</sub>SnO<sub>6</sub>: A hole-dopable <em>p</em>-type oxide
  • DOI:
    10.1016/j.apsusc.2022.155981
  • 发表时间:
    2023-03-15
  • 期刊:
  • 影响因子:
  • 作者:
    Yaoqiao Hu;Darrell Schlom;Suman Datta;Kyeongjae Cho
  • 通讯作者:
    Kyeongjae Cho

Suman Datta的其他文献

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{{ truncateString('Suman Datta', 18)}}的其他基金

E2CDA: Type I: EXtremely Energy Efficient Collective ELectronics (EXCEL)
E2CDA:I 型:极其节能的集体电子 (EXCEL)
  • 批准号:
    1640081
  • 财政年份:
    2016
  • 资助金额:
    $ 40万
  • 项目类别:
    Continuing Grant
Collaborative: Mixed Anion and Cation Based Transistor Architecture for Ultra-Low Power Complementary Logic Applications
协作:用于超低功耗互补逻辑应用的混合阴离子和阳离子晶体管架构
  • 批准号:
    1028807
  • 财政年份:
    2010
  • 资助金额:
    $ 40万
  • 项目类别:
    Standard Grant

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Cell Research (细胞研究)
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