Reversible Tuning of Surface Chemical Reactivity in Thin Solid Films
固体薄膜表面化学反应性的可逆调节
基本信息
- 批准号:1057374
- 负责人:
- 金额:$ 42.2万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2011
- 资助国家:美国
- 起止时间:2011-09-15 至 2015-02-28
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
With the support from the Macromolecular, Supramolecular and Nanochemistry program, Professor Teplyakov and coworkers in the Department of Chemistry at the University of Delaware will establish a novel strategy to control chemical and physical properties of surfaces and interfaces formed during deposition of thin solid films. Due to the importance of thin solid films in a wide variety of applications (ranging from coating technology to circuit fabrication), this approach will provide a platform for further improvement of such processes. Promoting and suppressing certain surface reactions during and after the deposition will yield a controllable surface elemental composition, while this composition together with surface functionalization will provide a tunable chemical response, which is important at different stages of film production. An inherent advantage of this fundamental, molecular-level approach is that the insight obtained from the investigation can be projected towards other applications not fully developed at present, such as molecular electronics and hybrid organic/inorganic devices. The fundamental premise is based on understanding the effects of the chemical functionality of surfaces pretreated for film growth and of the surfaces of films produced on the reactivity with respect to further desired chemical process. The major conceptual difference from traditional approaches to surface functionalization is in understanding the effects of the surface on the reactivity of these functional groups. Most of the work will focus on the semiconductor surfaces and films used in microelectronics but the findings of this research will be extended towards manipulation of other systems. Students at all levels will be involved in the effort, and Professor Teplyakov will establish a university wide mentoring program for graduate and postdoctoral students interested in academic careers.With the continued reduction in the size of our electronic devices, new and more efficient materials must be developed to serve as insulating barriers between metallic conductors and semiconductors. This project will examine the fundamental mechanisms of the formation and growth of very thin layers made of titanium and tantalum carbide and nitride compounds. These materials offer many advantages for barriers in integrated circuits, and this study will help in the development of next generation microelectronic devices.
在大分子、超分子和纳米化学计划的支持下,特拉华大学化学系的特普利亚科夫教授和同事们将建立一种新的策略来控制沉积薄膜过程中形成的表面和界面的化学和物理性质。由于薄膜固体薄膜在广泛的应用(从涂层技术到电路制造)中的重要性,该方法将为进一步改进此类工艺提供平台。在沉积过程中和沉积后促进和抑制某些表面反应将产生可控的表面元素组成,而这种组成与表面官能化将提供可调的化学反应,这在薄膜生产的不同阶段是重要的。这种基本的、分子水平的方法的一个固有优势是,从研究中获得的见解可以投射到目前尚未完全开发的其他应用领域,如分子电子学和有机/无机混合器件。基本的前提是了解用于薄膜生长的前处理表面的化学官能度和所生产的薄膜表面对进一步所需化学过程的反应性的影响。与传统的表面功能化方法在概念上的主要区别在于理解表面对这些官能团的反应性的影响。大部分工作将集中在微电子中使用的半导体表面和薄膜上,但这项研究的发现将扩展到对其他系统的操纵。所有级别的学生都将参与到这一努力中来,特普利亚科夫教授将在大学范围内为对学术生涯感兴趣的研究生和博士后建立一个指导计划。随着我们的电子设备尺寸的不断缩小,必须开发新的、更高效的材料来作为金属导体和半导体之间的绝缘屏障。这个项目将研究由钛、碳化钽和氮化物组成的非常薄的层的形成和生长的基本机制。这些材料为集成电路中的阻挡层提供了许多优点,这一研究将有助于下一代微电子器件的发展。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Andrew Teplyakov其他文献
Andrew Teplyakov的其他文献
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{{ truncateString('Andrew Teplyakov', 18)}}的其他基金
Collaborative Research: Scalable Nanomanufacturing Platform for Area-Selective Atomic Layer Deposition of Components for Ultra-Efficient Functional Devices
合作研究:用于超高效功能器件组件的区域选择性原子层沉积的可扩展纳米制造平台
- 批准号:
2225900 - 财政年份:2023
- 资助金额:
$ 42.2万 - 项目类别:
Standard Grant
MRI: Acquisition of a Time-of-Fight Secondary Ion Mass Spectrometer
MRI:购买战斗时间二次离子质谱仪
- 批准号:
2116754 - 财政年份:2021
- 资助金额:
$ 42.2万 - 项目类别:
Standard Grant
New Etching Methodologies for Atomic Level Precision in Manufacturing Processes at the Micro-to-Nanoscale
在微纳米级制造过程中实现原子级精度的新蚀刻方法
- 批准号:
2035154 - 财政年份:2020
- 资助金额:
$ 42.2万 - 项目类别:
Standard Grant
Chemical Control over Interface Formation and Impurity Introduction and Distribution in Thin Solid Films
对固体薄膜中界面形成以及杂质引入和分布的化学控制
- 批准号:
0650123 - 财政年份:2007
- 资助金额:
$ 42.2万 - 项目类别:
Continuing Grant
Atomic Level Control of Interface Chemistry for Metal Deposition on Semiconductors
半导体金属沉积界面化学的原子级控制
- 批准号:
0313803 - 财政年份:2003
- 资助金额:
$ 42.2万 - 项目类别:
Standard Grant
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