Atomic Level Control of Interface Chemistry for Metal Deposition on Semiconductors

在分析和表面化学项目的支持下，特拉华州大学化学系的Tejerakov教授和他的同事正在研究用氮化钛阻挡层改性的硅和氧化硅表面上金属膜的沉积机制。 研究的目标是使用光化学方法结合传统的化学和物理气相沉积方法来精确控制铝、铜和氮化钛阻挡层的沉积化学反应。 原位红外光谱用于监测反应机理和所得多层界面的结构。 沉积过程的分子水平的理解是这项工作的结果。 与秘鲁天主教大学的学生交流和课程开发是研究项目的一个重要方面。了解控制微电子应用中金属薄膜和阻挡层质量的机制和参数是本研究项目的目标。 特拉华州的Tejanakov教授和他的同事正在使用原位红外光谱法来探测硅和氧化硅衬底上的多层界面结构。 该信息与微电子工业中电子材料处理协议的开发有关。

With the support of the Analytical and Surface Chemistry Program, Professor Teplyakov and his coworkers in the Department of Chemistry at the University of Delaware are examining the mechanisms of deposition of metallic films onto silicon and silicon oxide surfaces modified with titanium nitride barrier layers. Precise control of the chemistry of deposition of aluminum, copper, and titanium nitride barrier layers using photochemical methods in combination with traditional chemical and physical vapor deposition methods is the goal of the research. In situ infrared spectroscopy is used to monitor the reaction mechanism and structures of the resulting multi-layer interfaces. A molecular level understanding of the deposition processes is the result of this work. Student exchange and curriculum development with the Pontifical Catholic University of Peru is an important aspect of the research project. Understanding the mechanisms and parameters that control the quality of metal films and barrier layers in microelectronic applications is the goal of this research project. Professor Teplyakov and his coworkers at Delaware are using in situ infrared spectroscopy to probe the structure of multi-layer interfaces on silicon and silicon oxide substrates. This information is relevant for the development of electronic materials processing protocols in the microelectronics industry.