Atomic Level Control of Interface Chemistry for Metal Deposition on Semiconductors

半导体金属沉积界面化学的原子级控制

• 批准号: 0313803
• 负责人: Andrew Teplyakov
• 金额: $ 39.5万
• 依托单位: University of Delaware
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-09-01 至 2007-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0313803&HistoricalAwards=false
• 关键词: Atomic; Level; Control; Interface; Chemistry

With the support of the Analytical and Surface Chemistry Program, Professor Teplyakov and his coworkers in the Department of Chemistry at the University of Delaware are examining the mechanisms of deposition of metallic films onto silicon and silicon oxide surfaces modified with titanium nitride barrier layers. Precise control of the chemistry of deposition of aluminum, copper, and titanium nitride barrier layers using photochemical methods in combination with traditional chemical and physical vapor deposition methods is the goal of the research. In situ infrared spectroscopy is used to monitor the reaction mechanism and structures of the resulting multi-layer interfaces. A molecular level understanding of the deposition processes is the result of this work. Student exchange and curriculum development with the Pontifical Catholic University of Peru is an important aspect of the research project. Understanding the mechanisms and parameters that control the quality of metal films and barrier layers in microelectronic applications is the goal of this research project. Professor Teplyakov and his coworkers at Delaware are using in situ infrared spectroscopy to probe the structure of multi-layer interfaces on silicon and silicon oxide substrates. This information is relevant for the development of electronic materials processing protocols in the microelectronics industry.

在分析和表面化学计划的支持下，特普利科夫教授及其在特拉华大学化学系的同事正在研究金属薄膜沉积到硅和氧化硅表面上通过钛耐钛壁层修饰的氧化硅表面的机制。 该研究的目的是研究铝，铜和硝酸钛屏障层的化学性质的精确控制。 原位红外光谱法用于监测所得多层界面的反应机理和结构。 对沉积过程的分子水平理解是这项工作的结果。 秘鲁天主教大学的学生交流和课程发展是研究项目的重要方面。了解微电子应用中金属膜和屏障层质量的机制和参数是该研究项目的目标。 Teplyakov教授及其在特拉华州的同事正在使用原位红外光谱法来探测硅和氧化硅底物上多层接口的结构。 该信息与微电子行业的电子材料处理协议的开发有关。