Chemical Control over Interface Formation and Impurity Introduction and Distribution in Thin Solid Films

对固体薄膜中界面形成以及杂质引入和分布的化学控制

• 批准号: 0650123
• 负责人: Andrew Teplyakov
• 金额: $ 44万
• 依托单位: University of Delaware
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-09-01 至 2010-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0650123&HistoricalAwards=false
• 关键词: Chemical; Control; over; Interface; Formation

With the support of the Analytical and Surface Chemistry Program, Professor Teplyakov and coworkers in the Department of Chemistry at the University of Delaware are investigating the nucleation and growth of ultra-thin barrier layers of titanium and tantalum carbide/nitrides. Growth from organometallic precursors is examined using in situ and ex situ surface spectroscopic and microscopic methods, coupled with computational modeling of the electronic structure and growth process of these thin films. The focus of the work is on obtaining a fundamental understanding of the mechanisms of barrier layer growth, and the control of contaminants in these layers. This fundamental understanding will be useful in the design of microelectronic device fabrication processes for ever smaller electronic devices. As electronic device sizes shrink, barriers to diffusion between metallic conductors and active semiconductors must become thinner and more effective, for these devices to work properly. The research supported in this project examines the fundamental mechanisms of formation and growth of very thin layers based on titanium and tantalum carbide and nitride compounds, which can be used for barrier layers in these devices. This fundamental information will be useful for the design of next generation microelectronic devices.

在分析和表面化学计划的支持下，特拉华大学化学系的Teplyakov教授和同事正在调查钛和甘蔗碳酸酯/硝酸盐的超薄屏障层的成核和生长。 使用原位和原位表面光谱和显微镜方法研究有机金属前体的生长，并与这些薄膜的电子结构和生长过程的计算建模相结合。 这项工作的重点是对屏障层生长的机制以及对这些层中污染物的控制的基本了解。 这种基本的理解将在微型设备制造过程的设计中对较小的电子设备有用。 随着电子设备尺寸缩小，金属导体和主动半导体之间扩散的障碍必须变得更薄，更有效，以使这些设备正常工作。 该项目支持的研究研究了基于钛，碳化物和硝酸盐化合物的非常薄层的形成和生长的基本机制，这些化合物可用于这些设备中的屏障层。 这些基本信息将对下一代微电子设备的设计很有用。