GOALI: Tailoring the Electronic Structure of Few-Layer Graphene for Electronic and Optoelectronic Applications
GOALI:为电子和光电应用定制少层石墨烯的电子结构
基本信息
- 批准号:1106225
- 负责人:
- 金额:$ 56.96万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2011
- 资助国家:美国
- 起止时间:2011-09-01 至 2015-08-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Technical: This GOALI project aims to develop a systematic understanding of the key electronic and optical properties of few-layer graphene and to apply this knowledge to exploratory electronic and photonic devices. The project involves collaboration between academia (Columbia University and Case Western Reserve University) and industry (IBM T. J. Watson Research Center). Recent research has revealed the remarkable electronic and optical properties of single-layer graphene. Few-layer graphene retains many of the unique properties of single-layer graphene while also providing much more flexibility in electronic structure, including the availability of a tunable band gap. Through this research project, scientists investigate how doping, electric fields and crystallographic stacking alter the properties of few-layer graphene material. Measurement techniques supporting these investigations include electrical transport characterization, light absorption in the optical, infrared, and terahertz spectral ranges, and Raman spectroscopy of phonons. The studies examine both pristine few-layer graphene samples and films in electrostatically gated device structures, which allow tuning of carrier densities and applied electric fields. The knowledge gained from these investigations will inform research on distinctive electronic and optoelectronic device applications of few-layer graphene, such as field-effect transistors with high on-off ratios and tunable infrared detectors and emitters.Non-technical: This project addresses basic research issues in a topical area of materials science with potential technological relevance. The research investigates the electronic and optical properties of few-layer graphene, a material that consists of ordered carbon films of just a few atomic layers in thickness. The project uses this knowledge to examine model electronic and photonic devices based on this novel material system. Success of the research will expand our fundamental understanding of the properties of electrons in few-layer graphene and their interaction with electric fields and light. In addition, applications of few-layer graphene in electronics and photonics have the potential to impact fields ranging from information technology to environmental monitoring. Through integrated industry-academia collaboration, the program provides opportunities for the training of graduate and undergraduate students in materials and in device fabrication, characterization and modeling.
技术:该GOALI项目旨在系统地了解少层石墨烯的关键电子和光学特性,并将这些知识应用于探索性电子和光子器件。该项目涉及学术界(哥伦比亚大学和凯斯西储大学)和工业界(IBM T. J. Watson研究中心)之间的合作。最近的研究揭示了单层石墨烯的卓越的电子和光学特性。少层石墨烯保留了单层石墨烯的许多独特性质,同时也提供了更大的电子结构灵活性,包括可调带隙的可用性。通过这个研究项目,科学家们研究了掺杂、电场和晶体堆积如何改变少层石墨烯材料的性能。支持这些研究的测量技术包括电输运表征,光学、红外和太赫兹光谱范围内的光吸收,以及声子的拉曼光谱。这些研究检查了原始的几层石墨烯样品和静电门控器件结构中的薄膜,这些结构允许调整载流子密度和外加电场。从这些研究中获得的知识将为研究独特的电子和光电子器件应用提供信息,例如具有高开关比的场效应晶体管和可调谐红外探测器和发射器。非技术:该项目涉及材料科学主题领域的基础研究问题,具有潜在的技术相关性。这项研究调查了少层石墨烯的电子和光学特性,这是一种由只有几个原子层厚度的有序碳膜组成的材料。该项目利用这些知识来研究基于这种新型材料系统的模型电子和光子器件。这项研究的成功将扩展我们对石墨烯中电子特性及其与电场和光的相互作用的基本理解。此外,少层石墨烯在电子和光子学中的应用有可能影响从信息技术到环境监测等领域。通过整合产学研合作,该项目为研究生和本科生提供了在材料和器件制造、表征和建模方面的培训机会。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Tony Heinz其他文献
Tony Heinz的其他文献
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{{ truncateString('Tony Heinz', 18)}}的其他基金
Controlling the Band Structure of 2D Semiconductors by their Dielectric Environment
通过介电环境控制二维半导体的能带结构
- 批准号:
1708457 - 财政年份:2017
- 资助金额:
$ 56.96万 - 项目类别:
Continuing Grant
Collaborative Research: GOALI: Graphene THz/IR Optics: Fundamentals and Emerging Photonics Applications
合作研究:GOALI:石墨烯太赫兹/红外光学:基础知识和新兴光子学应用
- 批准号:
1411107 - 财政年份:2014
- 资助金额:
$ 56.96万 - 项目类别:
Standard Grant
Collaborative Research: Properties and Synthesis of Atomically Thin Molybdenum Disulfide
合作研究:原子薄二硫化钼的性质与合成
- 批准号:
1106172 - 财政年份:2011
- 资助金额:
$ 56.96万 - 项目类别:
Continuing Grant
NIRT/SNB: Combined Optical, Electrical, Mechanical, and Thermal Characterization of Individual Nanotubes
NIRT/SNB:单个纳米管的综合光学、电学、机械和热表征
- 批准号:
0507111 - 财政年份:2005
- 资助金额:
$ 56.96万 - 项目类别:
Standard Grant
Probing Far-Infrared Excitations of Surfaces and Thin Films by Optoelectronic Techniques
利用光电技术探测表面和薄膜的远红外激发
- 批准号:
9612294 - 财政年份:1996
- 资助金额:
$ 56.96万 - 项目类别:
Standard Grant
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