Crystal Growth of nitride single crystals of high purity with the ammonothermal method

氨热法晶体生长高纯度氮化物单晶

• 批准号: 201436692
• 负责人: Dr. Elke Meissner
• 金额: --
• 依托单位: Lehrstuhl für Elektronische Bauelemente
• 依托单位国家: 德国
• 项目类别: Research Units
• 财政年份: 2011
• 资助国家: 德国
• 起止时间: 2010-12-31 至 2018-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/201436692?language=en
• 关键词: Crystal; Growth; nitride; single; crystals

The second funding period of this project deals with the extension and further development of the ammonoacidic and ammonobasic process for the growth of nitride single crystals. In this context , the recent results of the other subprojects will be applied to the basic processes in order to not only get an optimized process beyond state of the art, but to get an integrated view of the ongoing processes during crystal growth. The sources and transport of unintentional impurities will be evaluated and their incorporation into the crystals depending on the process parameters and the chemistry of the growth system are examined. In addition to the experimental work and directly related thereto, the flow pattern and the influence of the process parameters on the temperature and flow distribution will be further investigated with 30 simulations, which will help to involve so far in literature unconsidered effects. Moreover, a chemical model of the ammonothermal system will be developed, based on the new finding from period one, which will account for previously unconsiderd aspects like back transportation of the mineralizes or distribution of chemical spezies. Such a model does not exist so far.Later on in the project, the obtained knowledge with regard to the ammonothermal synthesis of nitrides will be transferred to the growth of new functional nitride crystals . The studies of nitride compounds performed in the first period by TP 1, revealed that especially such compounds with a Wurtzite-type structure are very promising candidates for an ammonothermal synthesis . Based on the experiments and investigations of the subprojects 1 and 2 concerning intermediates and new mineralizers, the growth of the semiconductor materials lnN and Zn3N2 and of the ternary Zinc-IV-nitr ides, like ZnSiN2 , ZnGeN2 , and ZnSnN2 , will be targeted . These materials could not be produced as bulk crystalline material so far. However, a high potential of these compounds could be expected as a alternative to the existing GaN, lnN, and AIN system. So the project will path the way to access a new material system.

该项目的第二期资助涉及氮化物单晶生长的氨酸和氨碱工艺的扩展和进一步发展。在此背景下，其他子项目的最新成果将应用于基本工艺，以便不仅获得超越现有技术的优化工艺，而且获得晶体生长过程中正在进行的工艺的综合视图。 我们将评估无意杂质的来源和传输，并检查它们根据工艺参数和生长系统的化学性质掺入晶体中的情况。除了与其直接相关的实验工作外，还将通过 30 次模拟进一步研究流动模式以及工艺参数对温度和流量分布的影响，这将有助于涉及迄今为止文献中未考虑的影响。此外，将根据第一阶段的新发现开发氨热系统的化学模型，该模型将解释以前未考虑的方面，例如矿化物的回运或化学种类的分布。到目前为止，这样的模型还不存在。在该项目的后期，所获得的有关氮化物氨热合成的知识将转移到新功能氮化物晶体的生长中。 TP 1 在第一阶段对氮化物化合物进行的研究表明，特别是具有纤锌矿型结构的化合物是氨热合成非常有希望的候选者。在子项目一、二中间体和新型矿化剂实验研究的基础上，重点生长半导体材料lnN、Zn3N2以及ZnSiN2、ZnGeN2、ZnSnN2等三元锌四氮化物。迄今为止，这些材料还不能作为块状晶体材料生产。然而，这些化合物有望作为现有 GaN、InN 和 AIN 系统的替代品。因此，该项目将为访问新材料系统开辟道路。