Crystal Growth of nitride single crystals of high purity with the ammonothermal method

氨热法晶体生长高纯度氮化物单晶

• 批准号: 201436692
• 负责人: Dr. Elke Meissner
• 金额: --
• 依托单位: Lehrstuhl für Elektronische Bauelemente
• 依托单位国家: 德国
• 项目类别: Research Units
• 财政年份: 2011
• 资助国家: 德国
• 起止时间: 2010-12-31 至 2018-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/201436692?language=en
• 关键词: Crystal; Growth; nitride; single; crystals

The second funding period of this project deals with the extension and further development of the ammonoacidic and ammonobasic process for the growth of nitride single crystals. In this context , the recent results of the other subprojects will be applied to the basic processes in order to not only get an optimized process beyond state of the art, but to get an integrated view of the ongoing processes during crystal growth. The sources and transport of unintentional impurities will be evaluated and their incorporation into the crystals depending on the process parameters and the chemistry of the growth system are examined. In addition to the experimental work and directly related thereto, the flow pattern and the influence of the process parameters on the temperature and flow distribution will be further investigated with 30 simulations, which will help to involve so far in literature unconsidered effects. Moreover, a chemical model of the ammonothermal system will be developed, based on the new finding from period one, which will account for previously unconsiderd aspects like back transportation of the mineralizes or distribution of chemical spezies. Such a model does not exist so far.Later on in the project, the obtained knowledge with regard to the ammonothermal synthesis of nitrides will be transferred to the growth of new functional nitride crystals . The studies of nitride compounds performed in the first period by TP 1, revealed that especially such compounds with a Wurtzite-type structure are very promising candidates for an ammonothermal synthesis . Based on the experiments and investigations of the subprojects 1 and 2 concerning intermediates and new mineralizers, the growth of the semiconductor materials lnN and Zn3N2 and of the ternary Zinc-IV-nitr ides, like ZnSiN2 , ZnGeN2 , and ZnSnN2 , will be targeted . These materials could not be produced as bulk crystalline material so far. However, a high potential of these compounds could be expected as a alternative to the existing GaN, lnN, and AIN system. So the project will path the way to access a new material system.

该项目的第二个融资期介绍了硝酸盐单晶体生长的氨酸和氨基化过程的扩展和进一步发展。在这种情况下，其他子项目的最新结果将应用于基本过程，以便不仅获得了最新技术以外的优化过程，而且还可以对晶体增长过程中正在进行的过程进行综合视图。 将评估意外杂质的来源和运输，并根据过程参数和生长系统的化学性质融合到晶体中。除了实验工作以及直接相关的工作外，还将通过30个模拟进一步研究过程参数对温度和流量分布的影响，这将有助于迄今为止参与文献未经考虑的效果。此外，基于第一期的新发现，将开发出氨热系统的化学模型，该发现将解释以前不受欢迎的方面，例如矿化化的矿化或化学斑点的分布。到目前为止，这种模型还不存在。在项目中，关于硝酸盐的氨气合成的知识将转移到新的功能性氮化物晶体的生长中。 TP 1在第一阶段进行的氮化物化合物的研究表明，尤其是具有Wurtzite型结构的化合物是氨油合成的非常有希望的候选者。基于对中间体和新矿化剂的suprojects 1和2的实验和研究，半导体材料LNN和ZN3N2的生长以及Znsin2，Zngen2，Zngen2和Znsnn2等三元锌IV-NITR IDE的生长。到目前为止，这些材料无法作为散装晶体材料生产。但是，这些化合物的高潜力可以预期作为现有GAN，LNN和AIN系统的替代方法。因此，该项目将为访问新材料系统的方式提供道路。