MRI: Acquisition of Electron-Beam Lithography System for Nanofabrication and Processing

MRI:获取用于纳米制造和加工的电子束光刻系统

基本信息

  • 批准号:
    1126179
  • 负责人:
  • 金额:
    $ 126.34万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2011
  • 资助国家:
    美国
  • 起止时间:
    2011-09-01 至 2015-04-30
  • 项目状态:
    已结题

项目摘要

MRI: Acquisition of Electron-Beam Lithography System for Nanofabrication and ProcessingResearch Objectives and Approaches: The objective of this research is to acquire a state-of-the-art electron-beam lithography (EBL) system critical for fabrication and investigation of nano-structures. The approach is to use the EBL system to define nanoscale features in cutting-edge interdisciplinary research in nano-photonics, electronics and sensing. The instrument will be an integral part of the unique Nano-Fabrication and Processing (NF&P) facility at the University of Arizona for the exploration of nano-structured components and systems.Intellectual Merit: The EBL system will be essential in realizing the state-of-the-art research in silicon photonics and integration of optics with electronics and software on silicon chips. The feature sizes for the silicon photonic chips are reaching sub-50 nm that would be reliably supported by the EBL system. This research would also be instrumental in the NSF Engineering Research Center on Integrated Access Networks (CIAN) and will be useful to researchers from other partner universities within CIAN. Furthermore, the requested system will enable a wide range of novel opportunities in nano-scale R&D, providing a unique capability especially for the young faculty and students with innovative thinking.Broader Impacts: Advances in nano-technology is revolutionizing the fields of information technology, alternative energy, environmental sciences, healthcare, and homeland security. The EBL will be an essential tool in the education and training of students in nano-science and technology. Also, faculty and researchers associated with the minority serving schools that are partnered with CIAN ERC including Norfolk State University and Tuskegee University will be able to take advantage of this facility.
研究目标和方法:本研究的目标是获得对纳米结构的制造和研究至关重要的最先进的电子束光刻(EBL)系统。该方法是使用EBL系统来定义纳米光子学、电子学和传感领域前沿跨学科研究中的纳米尺度特征。该仪器将成为亚利桑那大学独特的纳米制造和加工(NF&P)设施的一个组成部分,用于探索纳米结构组件和系统。知识优势:EBL系统将在实现硅光子学和集成光学与电子和硅芯片上的软件的最先进的研究至关重要。硅光子芯片的特征尺寸将达到50nm以下,这将被EBL系统可靠地支持。这项研究也将有助于美国国家科学基金会综合接入网络工程研究中心(CIAN),并将对来自其他合作大学的研究人员有用。此外,所要求的系统将为纳米级研发提供广泛的新机会,特别是为具有创新思维的年轻教师和学生提供独特的能力。更广泛的影响:纳米技术的进步正在彻底改变信息技术、替代能源、环境科学、医疗保健和国土安全等领域。EBL将成为纳米科学和技术教育和培训学生的重要工具。此外,与ian ERC合作的少数族裔学校(包括诺福克州立大学和塔斯基吉大学)相关的教师和研究人员将能够利用这一设施。

项目成果

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Chris Hessenius其他文献

Chris Hessenius的其他文献

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{{ truncateString('Chris Hessenius', 18)}}的其他基金

Ultrafast deep UV laser source by all intracavity fourth harmonic generation
全腔内四次谐波产生的超快深紫外激光源
  • 批准号:
    1709918
  • 财政年份:
    2017
  • 资助金额:
    $ 126.34万
  • 项目类别:
    Standard Grant
SBIR Phase I: High Power Mid-Infrared Vertical External Cavity Surface emitting Lasers With Gain Coupled Near-Infrared Outputs
SBIR 第一阶段:具有增益耦合近红外输出的高功率中红外垂直外腔表面发射激光器
  • 批准号:
    1621844
  • 财政年份:
    2016
  • 资助金额:
    $ 126.34万
  • 项目类别:
    Standard Grant
SBIR Phase I: High Pulse Energy Mid-IR Vertical External Cavity Surface Emitting Lasers (VECSELs)
SBIR 第一阶段:高脉冲能量中红外垂直外腔表面发射激光器 (VECSEL)
  • 批准号:
    1345829
  • 财政年份:
    2014
  • 资助金额:
    $ 126.34万
  • 项目类别:
    Standard Grant
New generation of high-power widely-tunable mid-IR lasers using novel collinear orthogonally-polarized two-color semiconductor VECSEL
采用新型共线正交偏振双色半导体 VECSEL 的新一代高功率宽可调中红外激光器
  • 批准号:
    1303476
  • 财政年份:
    2013
  • 资助金额:
    $ 126.34万
  • 项目类别:
    Standard Grant
AIR Option 1: Technology Translation - Portable, High-Power, Tunable CW Terahertz Source by Intra-Cavity Type-II Conversion in T-Cavity Two-Chip VECSEL
AIR 选项 1:技术转化 - 通过 T 腔两芯片 VECSEL 中的腔内 Type-II 转换实现便携式、高功率、可调谐 CW 太赫兹源
  • 批准号:
    1310832
  • 财政年份:
    2013
  • 资助金额:
    $ 126.34万
  • 项目类别:
    Standard Grant

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