Ultrafast deep UV laser source by all intracavity fourth harmonic generation
Ultrafast deep UV laser source by all intracavity fourth harmonic generation
批准号:
1709918
负责人:
Chris Hessenius
金额:
$37.84万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2017
资助国家:
美国
项目状态:
已结题
起止时间:
2017-05-01 至 2020-04-30
中文摘要
点击翻译按钮获取中文摘要
英文摘要
Title: Novel High-Power, Ultra-Violet LasersNon-Technical Description:The goal of this project is to develop an ultrafast, deep ultra-violet (UV) laser source by fourth harmonic generation. A modified t-cavity vertical external cavity surface emitting laser (VECSEL) is to operate in the 240-260nm range with pulse widths 10ps and peak powers 10W. The proposed design will eliminate the need for expensive and inefficient cavity stabilization electronics and will push the boundaries in various fields including: nonlinear optics, semiconductor lasers, cavity design, and ultrafast pulse generation. As part of the research, a new VECSEL gain material will be designed and grown to deliver the large gain bandwidth needed for short pulse generation while still providing high peak powers. This new gain material combined with a semiconductor absorber mirror in a t-cavity configuration will allow development of a new laser source that can enable future advancements in science, medicine, material processing, and engineering research. In addition, this research group will provide an excellent research experience for individuals from under-represented groups through REU programs and undergraduate research. Two undergraduate students are to be involved each year for summer and/or academic internship. Technical Description:The proposed research will implement a novel t-cavity configuration for fourth harmonic generation and eliminate the need for cavity stabilization electronics. Typically, fourth harmonic generation to the UV uses a source laser that is coupled into a series of external resonator cavities that recirculate the fundamental and second harmonic modes. These external cavities are very sensitive to minor movements which lead to phase variations of the beams and to large power fluctuations of the UV output. This situation requires that each cavity have their resonances locked to ensure stable outputs. Such systems are large, complicated, and expensive which limits their potential use outside of a laboratory environment. The proposed research will eliminate the need of the external cavity due to the all-internal nature of the design. Here, the fundamental field is frequency doubled in a nonlinear optical (NLO) crystal for second harmonic generation. As the frequency doubled field is orthogonally polarized to the fundamental, an intra-cavity polarizing beam splitter expels this field into an alternate cavity path. While this is not a resonant cavity, the difficulty of injecting the light into an external resonator is eliminated. The second harmonic is generated inside this cavity and creates a large field in which another NLO crystal can efficiently frequency double this field to the UV. While stabilization electronics would improve the field build-up in the cavity, the research is focused on obtaining a stable high peak power output without additional elements.
期刊论文(1)
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科研奖励(0)
会议论文
High peak power, sub-ps green emission in a passively mode locked W-cavity VECSEL
被动锁模 W 腔 VECSEL 中的高峰值功率、亚 ps 绿色发射
DOI:
10.1364/oe.384439
发表时间:
2020
期刊:
Optics Express
影响因子:
3.8
作者:
[Meyer, Jason T., Lukowski, Michal L., Hessenius, Chris, Wright, Ewan M., Fallahi, Mahmoud]
通讯作者:
Fallahi, Mahmoud
SBIR Phase I: High Power Mid-Infrared Vertical External Cavity Surface emitting Lasers With Gain Coupled Near-Infrared Outputs
-
批准号:1621844
-
项目类别:Standard Grant
-
资助金额:$22.5万
-
财政年份:2016
-
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依托单位:
SBIR Phase I: High Pulse Energy Mid-IR Vertical External Cavity Surface Emitting Lasers (VECSELs)
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资助金额:$15.0万
-
财政年份:2014
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依托单位:
New generation of high-power widely-tunable mid-IR lasers using novel collinear orthogonally-polarized two-color semiconductor VECSEL
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AIR Option 1: Technology Translation - Portable, High-Power, Tunable CW Terahertz Source by Intra-Cavity Type-II Conversion in T-Cavity Two-Chip VECSEL
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MRI: Acquisition of Electron-Beam Lithography System for Nanofabrication and Processing
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