New generation of high-power widely-tunable mid-IR lasers using novel collinear orthogonally-polarized two-color semiconductor VECSEL
采用新型共线正交偏振双色半导体 VECSEL 的新一代高功率宽可调中红外激光器
基本信息
- 批准号:1303476
- 负责人:
- 金额:$ 35.93万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2013
- 资助国家:美国
- 起止时间:2013-04-15 至 2018-09-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Objective: The objective of this research is to study and develop a novel high-power (watt-level), widely tunable, compact 3.5-4 micron laser source. The approach is based on a novel intra-cavity collinear type-II difference frequency generation (DFG) in a two-chip T-cavity vertical external-cavity surface-emitting laser (VECSEL). Wavelength tuning of each chip around the gain maxima will result in high power wide wavelength tuning in the mid-IR band. The proposed high quality factor doubly-resonant laser cavity will open doors to a new class of high power semiconductor-based mid- to far-IR lasers and will have a transformative effect in various fields of science. Intellectual Merit: The proposed research is to develop a new class of high-power, compact, widely-tunable mid-IR laser sources. Significant research and technical advancement will be made in areas such as: semiconductor laser and cavity design, nonlinear optical materials, thermal management, and difference frequency conversion. The proposed intra-cavity DFG in a two-color doubly-resonant VECSEL cavity will open doors to a new class of high power semiconductor-based mid- to far-IR lasers.Broader Impact: The proposed mid-IR source will have significant future scientific impact on various fields of science and engineering and multi-disciplinary education and outreach. In addition to the application-rich mid-IR, the proposed concept can be extended to the untapped spectral regions in the far-IR providing even more research opportunities in the future. The interdisciplinary nature of the proposed research will provide powerful and unique educational opportunities for graduate and undergraduate and underrepresented minority students.
目的:研究和开发一种新型的高功率(瓦级)、宽调谐、紧凑型3.5-4微米激光光源。该方法是基于一种新的腔内共线II型差频产生(DFG)在两芯片的T腔垂直外腔面发射激光器(VECSEL)。每个芯片在增益最大值附近的波长调谐将导致在中红外波段中的高功率宽波长调谐。所提出的高品质因数双谐振激光腔将为一类新的高功率基于半导体的中红外到远红外激光器打开大门,并将在各个科学领域产生变革性影响。智力优势:拟议的研究是开发一种新的高功率,紧凑,广泛可调谐的中红外激光源。在半导体激光器及谐振腔设计、非线性光学材料、热管理、差频转换等领域将取得重大研究和技术进步。双色双谐振VECSEL腔内DFG技术的提出将为新型高功率半导体中红外激光器的发展打开大门。更广泛的影响:中红外光源将对未来科学、工程、多学科教育和推广等各个领域产生重大的科学影响。除了应用丰富的中红外,所提出的概念可以扩展到未开发的远红外光谱区域,在未来提供更多的研究机会。拟议研究的跨学科性质将为研究生和本科生以及代表性不足的少数民族学生提供强大而独特的教育机会。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Chris Hessenius其他文献
Chris Hessenius的其他文献
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{{ truncateString('Chris Hessenius', 18)}}的其他基金
Ultrafast deep UV laser source by all intracavity fourth harmonic generation
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- 批准号:
1709918 - 财政年份:2017
- 资助金额:
$ 35.93万 - 项目类别:
Standard Grant
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- 批准号:
1621844 - 财政年份:2016
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$ 35.93万 - 项目类别:
Standard Grant
SBIR Phase I: High Pulse Energy Mid-IR Vertical External Cavity Surface Emitting Lasers (VECSELs)
SBIR 第一阶段:高脉冲能量中红外垂直外腔表面发射激光器 (VECSEL)
- 批准号:
1345829 - 财政年份:2014
- 资助金额:
$ 35.93万 - 项目类别:
Standard Grant
AIR Option 1: Technology Translation - Portable, High-Power, Tunable CW Terahertz Source by Intra-Cavity Type-II Conversion in T-Cavity Two-Chip VECSEL
AIR 选项 1:技术转化 - 通过 T 腔两芯片 VECSEL 中的腔内 Type-II 转换实现便携式、高功率、可调谐 CW 太赫兹源
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1310832 - 财政年份:2013
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$ 35.93万 - 项目类别:
Standard Grant
MRI: Acquisition of Electron-Beam Lithography System for Nanofabrication and Processing
MRI:获取用于纳米制造和加工的电子束光刻系统
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1126179 - 财政年份:2011
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$ 35.93万 - 项目类别:
Standard Grant
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