Design and Modeling Framework for Managing Variability in Silicon Interposers for 3D Integration
用于管理 3D 集成硅中介层可变性的设计和建模框架
基本信息
- 批准号:1129918
- 负责人:
- 金额:$ 37.39万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2011
- 资助国家:美国
- 起止时间:2011-09-01 至 2015-08-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The research objective of this award is to develop a design framework that enables the modeling of multi-physics variability in 2.5D and 3D integrated micro-systems with a focus on silicon vias (TSVs), by accounting for both local and global variations across the system. Using this framework, methods will be developed for localized parametric optimization across the thermal-electrical-mechanical multi-physics domains for minimizing variability and maximizing performance. The difficulty in modeling these multi-physics interactions between the three domains is complicated due to the multi-scale dimensions of the structures involved and manufacturing variations. In addition, use of technologies such as micro-fluidics for cooling such systems further complicates the domains that need to be modeled. The deliverables include the development of a modeling framework for simultaneous analysis of the thermal, electrical and mechanical equations across a 2.5D/3D sub-system or system containing TSVs, and a means to enable the capture of the interaction between the domains and parameterization in critical areas for the cross domain optimization of the thermal, electrical and mechanical behavior. If successful, this research will lead to a design and modeling framework that could address the problems being faced by the semiconductor industry for the design of 3D integrated systems. The results of this research will be disseminated to the design community and also used to develop curriculum material for 3D system integration to benefit both undergraduate and graduate students. High school students and teachers will also be educated through this award by creating awareness amongst them on the issues and challenges being faced by the semiconductor and electronics industry for miniaturizing electronic systems.
该奖项的研究目标是开发一个设计框架,通过考虑系统中的局部和全局变化,对2.5D和3D集成微系统中的多物理可变性进行建模,重点关注硅通孔(TSV)。使用这个框架,方法将被开发为本地化的参数优化在热-电-机械多物理域,以最大限度地减少可变性和最大限度地提高性能。由于所涉及的结构的多尺度尺寸和制造变化,建模三个域之间的这些多物理相互作用的难度是复杂的。此外,使用诸如微流体的技术来冷却这样的系统进一步使需要建模的领域复杂化。可交付成果包括开发一个建模框架,用于跨包含TSV的2.5D/3D子系统或系统同时分析热、电和机械方程,以及一种能够捕获域之间的相互作用和关键区域参数化的方法,用于热、电和机械行为的跨域优化。如果成功的话,这项研究将导致一个设计和建模框架,可以解决半导体行业在3D集成系统设计中所面临的问题。这项研究的结果将传播到设计界,也用于开发三维系统集成的课程材料,使本科生和研究生都受益。高中学生和教师也将通过这个奖项受到教育,使他们认识到半导体和电子行业在电子系统的安全方面所面临的问题和挑战。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Madhavan Swaminathan其他文献
Vertical Power Delivery for High Performance Computing Systems with Buck-Derived Regulators
具有降压稳压器的高性能计算系统的垂直供电
- DOI:
- 发表时间:
2024 - 期刊:
- 影响因子:0
- 作者:
Sriharini Krishnakumar;Mingeun Choi;Ramin Rahimzadeh Khorasani;Rohit Sharma;Madhavan Swaminathan;Satish Kumar;Inna Partin - 通讯作者:
Inna Partin
Finite difference modeling of multiple planes in packages
封装中多个平面的有限差分建模
- DOI:
- 发表时间:
2006 - 期刊:
- 影响因子:0
- 作者:
A. E. Engin;Madhavan Swaminathan;Yoshitaka Toyota - 通讯作者:
Yoshitaka Toyota
Reinforcement Learning Applied to the Optimization of Power Delivery Networks with Multiple Voltage Domains
强化学习应用于多电压域供电网络的优化
- DOI:
- 发表时间:
2023 - 期刊:
- 影响因子:0
- 作者:
Seunghyup Han;O. W. Bhatti;W. Na;Madhavan Swaminathan - 通讯作者:
Madhavan Swaminathan
Design of High-Speed Links via a Machine Learning Surrogate Model for the Inverse Problem
通过反问题的机器学习代理模型设计高速链路
- DOI:
- 发表时间:
2019 - 期刊:
- 影响因子:0
- 作者:
R. Trinchero;M. A. Dolatsara;Kallol Roy;Madhavan Swaminathan;F. Canavero - 通讯作者:
F. Canavero
Analysis and Design of Electromagnetic Bandgap (EBG) Structures for Power Plane Isolation Using 2D Dispersion Diagrams and Scalability
使用 2D 色散图和可扩展性分析和设计用于电源平面隔离的电磁带隙 (EBG) 结构
- DOI:
- 发表时间:
2006 - 期刊:
- 影响因子:0
- 作者:
Arif Ege Engin;Yoshitaka Toyota;Tae Hong Kim;Madhavan Swaminathan - 通讯作者:
Madhavan Swaminathan
Madhavan Swaminathan的其他文献
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{{ truncateString('Madhavan Swaminathan', 18)}}的其他基金
IUCRC Phase II Georgia Institute of Technology: Center for Advanced Electronics through Machine Learning [CAEML]
IUCRC 第二期佐治亚理工学院:机器学习先进电子学中心 [CAEML]
- 批准号:
2345055 - 财政年份:2023
- 资助金额:
$ 37.39万 - 项目类别:
Continuing Grant
IUCRC Phase II Georgia Institute of Technology: Center for Advanced Electronics through Machine Learning [CAEML]
IUCRC 第二期佐治亚理工学院:机器学习先进电子学中心 [CAEML]
- 批准号:
2137259 - 财政年份:2022
- 资助金额:
$ 37.39万 - 项目类别:
Continuing Grant
I/UCRC: Center for Advanced Electronics through Machine Learning (CAEML)
I/UCRC:机器学习先进电子学中心 (CAEML)
- 批准号:
1624731 - 财政年份:2016
- 资助金额:
$ 37.39万 - 项目类别:
Continuing Grant
Collaborative Research: Planning Grant: I/UCRC for Advanced Electronics through Machine Learning
合作研究:规划补助金:I/UCRC 通过机器学习实现先进电子学
- 批准号:
1464539 - 财政年份:2015
- 资助金额:
$ 37.39万 - 项目类别:
Standard Grant
Offchip Interconnect Signaling Scheme with Near Zero Simultaneous Switching Noise
具有近零同步开关噪声的片外互连信令方案
- 批准号:
0967134 - 财政年份:2010
- 资助金额:
$ 37.39万 - 项目类别:
Standard Grant
Inter-University Workshop on Next Generation Package Design
下一代包装设计大学间研讨会
- 批准号:
9711762 - 财政年份:1997
- 资助金额:
$ 37.39万 - 项目类别:
Standard Grant
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