Novel graphene-based electronic devices integratible with silicon: synergistic research across materials, concepts, and implementation

点击翻译按钮获取中文摘要

The objective of this program is to demonstrate novel silicon-integratible graphene-baseddevices, including the metal-oxide-graphene-silicon field-effect transistor to achieve draincurrent saturation with a zero bandgap, and the graphene-insulator-graphene junction to achieveresonance tunneling. These devices are expected to harness the enormous momentum behindsilicon manufacturing, exploit the unique advantages graphene while circumventing seriouschallenges, thus find niche applications for technology entry, and eventually enter themainstream digital arena with full potential enabled by future progress.Intellectual merit: This project represents coherent research efforts spanning materials, concepts,and implementation. The materials growth research will seek answers to fundamental questionsabout heteroepitaxy of two-dimensional layers. Novel device concepts, with deep roots inproven ideas (modulation doping and resonant tunneling), uniquely take advantage of thematerial properties. Implementation of the concepts incorporates realistic engineeringconsiderations from materials and processing to structures and modeling, and represents soundengineering practice.Broader impact: New discoveries will be introduced to undergraduate and graduate students, notonly to convey knowledge, but also to stimulate curiosity and enthusiasm. Outreach activitiessuch as the PI's partnership with a local high school will impact K-12 science and matheducation. The nature of the proposed research provides an excellent multidisciplinary researchplatform for graduate students. This project will enhance diversity by involving and trainingfemale graduate students and by recruiting young minds from underrepresented groups. Thesuccess of this research will potentially create US jobs by complementing the dominant, largelyoverseas silicon-based fabrication with graphene-based niche technologies.