CAREER: Low-Temperature Growth of High Crystallinity GeSn on Amorphous Materials for Advanced Optoelectronics
CAREER: Low-Temperature Growth of High Crystallinity GeSn on Amorphous Materials for Advanced Optoelectronics
批准号:
1255066
负责人:
Jifeng Liu
金额:
$56.6万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-02-01 至 2019-01-31
中文摘要
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英文摘要
Technical Description: The research objective of this CAREER project is to grow large-grained and single-crystal GeSn directly on amorphous materials at temperatures below 500 degrees Celsius as a gateway towards advanced optoelectronics on dielectric layers and glass substrates. Growing high crystallinity semiconductor thin films on amorphous substrates has long been a significant challenge in materials science that could break through the limitations of conventional methods such as epitaxy and wafer bonding. In this project, the research team investigates a new approach based on eutectic-mediated growth in Ge-Sn system to achieve high crystallinity GeSn alloy on amorphous substrates at low temperatures. Incorporation of Sn into Ge during the eutectic-mediated growth also transforms Ge towards a direct gap semiconductor with significantly improved optoelectronic properties. Furthermore, nanoscale geometrically-confined nucleation is applied to achieve single-crystal-like GeSn on amorphous layers for high performance optoelectronic devices. The fundamental materials science of related nucleation and growth mechanisms are studied both experimentally by microscopy and diffraction analyses and theoretically via Phase Field modeling. The research also investigates defects in GeSn and methods to reduce and passivate them for optimal optoelectronic properties.Non-technical Description: This project investigates a potentially transformative technology for applications in cost-effective, high-efficiency tandem solar cells as well as three-dimensional photonic circuits on future generations of silicon microchips. The principal investigator (PI) not only integrates the research project with graduate and undergraduate education, but also offers hands-on laboratory experiences related to this research project for 10th-11th grade students. The PI also plans to share interesting educational activities at the level of Scientific American with the general public via YouTube and other public media.
期刊论文(2)
专著(0)
科研奖励(0)
会议论文
Highly effective strain-induced band-engineering of (111) oriented, direct-gap GeSn crystallized on amorphous SiO 2 layers
在非晶 SiO 2 层上结晶的 (111) 取向、直接带隙 GeSn 的高效应变诱导能带工程
DOI:
10.1063/1.4943192
发表时间:
2016
期刊:
Applied Physics Letters
影响因子:
4
作者:
[Wang, Xiaoxin, Liu, Jifeng]
通讯作者:
Liu, Jifeng
DOI:
10.3389/fphy.2019.00134
发表时间:
2019-09
期刊:
Frontiers in Physics
影响因子:
3.1
作者:
[Xiaoxin Wang;A. C. Cuervo Covian;Lisa Je;Sidan Fu;Haofeng Li;J. Piao;Jifeng Liu]
通讯作者:
Xiaoxin Wang;A. C. Cuervo Covian;Lisa Je;Sidan Fu;Haofeng Li;J. Piao;Jifeng Liu
Collaborative Research: FuSe:Substrate-inverted Multi-Material Integration Technology
-
批准号:2328841
-
项目类别:Continuing Grant
-
资助金额:$36.0万
-
财政年份:2023
-
负责人:Jifeng Liu
-
依托单位:
PFI:AIR - TT: Hot Electron Nanophotonic UV/IR CMOS Quanta Image Sensors and Photodetectors
-
批准号:1700909
-
项目类别:Standard Grant
-
资助金额:$20.0万
-
财政年份:2017
-
负责人:Jifeng Liu
-
依托单位:
Collaborative Research: Nanostructured Conductive Tin Oxide for High-Efficiency Light Trapping in Thin Films and Photonic Devices
-
批准号:1509272
-
项目类别:Standard Grant
-
资助金额:$30.0万
-
财政年份:2015
-
负责人:Jifeng Liu
-
依托单位:
Nanophotonic MOS Solar-Blind Avalanche UV Detectors
-
批准号:1231701
-
项目类别:Standard Grant
-
资助金额:$36.62万
-
财政年份:2012
-
负责人:Jifeng Liu
-
依托单位:
国内基金
海外基金
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