CAREER: Low-Temperature Growth of High Crystallinity GeSn on Amorphous Materials for Advanced Optoelectronics

职业：用于先进光电子学的非晶材料上高结晶度 GeSn 的低温生长

• 批准号: 1255066
• 负责人: Jifeng Liu
• 金额: $ 56.6万
• 依托单位: Dartmouth College
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-02-01 至 2019-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1255066&HistoricalAwards=false
• 关键词: CAREER; Low; Temperature; Growth; Crystallinity

Technical Description: The research objective of this CAREER project is to grow large-grained and single-crystal GeSn directly on amorphous materials at temperatures below 500 degrees Celsius as a gateway towards advanced optoelectronics on dielectric layers and glass substrates. Growing high crystallinity semiconductor thin films on amorphous substrates has long been a significant challenge in materials science that could break through the limitations of conventional methods such as epitaxy and wafer bonding. In this project, the research team investigates a new approach based on eutectic-mediated growth in Ge-Sn system to achieve high crystallinity GeSn alloy on amorphous substrates at low temperatures. Incorporation of Sn into Ge during the eutectic-mediated growth also transforms Ge towards a direct gap semiconductor with significantly improved optoelectronic properties. Furthermore, nanoscale geometrically-confined nucleation is applied to achieve single-crystal-like GeSn on amorphous layers for high performance optoelectronic devices. The fundamental materials science of related nucleation and growth mechanisms are studied both experimentally by microscopy and diffraction analyses and theoretically via Phase Field modeling. The research also investigates defects in GeSn and methods to reduce and passivate them for optimal optoelectronic properties.Non-technical Description: This project investigates a potentially transformative technology for applications in cost-effective, high-efficiency tandem solar cells as well as three-dimensional photonic circuits on future generations of silicon microchips. The principal investigator (PI) not only integrates the research project with graduate and undergraduate education, but also offers hands-on laboratory experiences related to this research project for 10th-11th grade students. The PI also plans to share interesting educational activities at the level of Scientific American with the general public via YouTube and other public media.

技术描述：该职业项目的研究目标是在低于500摄氏度的非晶态材料上直接生长大颗粒单晶GeSnO，作为在介质层和玻璃基板上实现先进光电子学的门户。在非晶态衬底上生长高结晶度的半导体薄膜长期以来一直是材料科学中的一个重大挑战，它可以突破外延和晶片键合等传统方法的限制。在这个项目中，研究小组探索了一种基于Ge-Sn系共晶生长的新方法，以在非晶态衬底上低温获得高结晶度的GeSn合金。在共晶生长过程中掺入锡也使Ge向直接带隙半导体转变，具有显著改善的光电性能。此外，我们还利用纳米几何约束成核法在高性能光电器件的非晶层上获得了类单晶的GeSn膜。通过显微分析、衍射分析和相场模拟，从实验和理论上研究了相关形核和生长机制的基础性材料科学。该研究还研究了GeSn中的缺陷以及减少和钝化它们的方法，以获得最佳的光电性能。非技术描述：该项目研究了一种潜在的变革性技术，用于在未来几代硅微芯片上应用于低成本、高效率的串联太阳能电池以及三维光子电路。首席研究员(PI)不仅将研究项目与研究生和本科教育相结合，还为10-11年级的学生提供与该研究项目相关的动手实验室体验。该协会还计划通过YouTube和其他公共媒体与公众分享科学美国人层面的有趣教育活动。

项目成果

Highly effective strain-induced band-engineering of (111) oriented, direct-gap GeSn crystallized on amorphous SiO 2 layers

在非晶 SiO 2 层上结晶的 (111) 取向、直接带隙 GeSn 的高效应变诱导能带工程

• DOI: 10.1063/1.4943192
• 发表时间: 2016
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Wang, Xiaoxin;Liu, Jifeng
• 通讯作者: Liu, Jifeng

GeSn on Insulators (GeSnOI) Toward Mid-infrared Integrated Photonics

• DOI: 10.3389/fphy.2019.00134
• 发表时间: 2019-09
• 期刊: Frontiers in Physics
• 影响因子: 3.1
• 作者: Xiaoxin Wang;A. C. Cuervo Covian;Lisa Je;Sidan Fu;Haofeng Li;J. Piao;Jifeng Liu