PFI:AIR - TT: Hot Electron Nanophotonic UV/IR CMOS Quanta Image Sensors and Photodetectors

PFI:AIR - TT：热电子纳米光子紫外/红外 CMOS 量子图像传感器和光电探测器

• 批准号: 1700909
• 负责人: Jifeng Liu
• 金额: $ 20万
• 依托单位: Dartmouth College
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-07-15 至 2019-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1700909&HistoricalAwards=false
• 关键词: PFI; AIR; TT; Hot; Electron

This PFI: AIR Technology Translation project focuses on translating a novel nanophotonic ultraviolet(UV)/infrared(IR) photodetector structure onto existing silicon-based image sensors, such as those used in cell phone cameras, to greatly extend their vision well beyond the visible light.  These Nanophotonic UV/IR Quanta Image Sensors (UV/IR QIS) are important because they can be seamlessly integrated with the cameras in our cell phones and other devices to "see" things that are outside of the visible spectrum and thus invisible to human eyes. This feature opens the door for low-cost, large-arrayed image sensors to enter the billion-dollar market of UV/IR imaging, including powerline inspection, vehicle driver vision enhancement, biomedical imaging, and environmental monitoring.  The project will result in a proof-of-concept prototype of nanophotonic UV/IR QIS with the following unique features: (1) ultrahigh sensitivity allowing single photon detection; (2) compatibility with existing image sensor array fabrication technology; and (3) ease of miniaturization. These features provide the following advantages when compared to the leading competing technologies: (1) Significantly extended detection spectral range well beyond human vision compared to existing silicon image sensors; (2) Higher sensitivity and larger pixel array than existing GaN (Gallium Nitride)-based UV detectors and InGaAs (Indium Gallium Arsenic)-based IR detectors; and (3) Drastic cost and weight reduction (up to 10-100x) compared to existing solar-blind UV (based on GaN) and short wave IR cameras (based on InGaAs).This project addresses the following technology gap(s) through the following tasks over the course of the project: (A) Optimized device design integrating hot-electron internal photoemission mechanism with existing silicon QIS device structure; (B) Choosing adequate oxide and metallic nanostructures compatible with silicon nanoelectronics for spectral extension into the IR regime (i.e. metal/oxide interfacial barrier engineering); (C) Device fabrication for overall integration. By successfully demonstrating this proof-of-concept prototype, the team will develop techniques to address all these issues. In addition, personnel involved in this project, especially the graduate students, will receive innovation, entrepreneurship, and technology translation experiences through the development of market-entry prototypes and potentially founding their own start-up company.The project engages LaXense, Inc. to expedite the commercialization of the nanophotonic IR photodetectors in this technology translation effort by providing a market-entry application in their existing photonics platform.

这个PFI：空气技术翻译项目专注于将一种新型的纳米光子紫外线(UV)/红外(IR)光电探测器结构转换到现有的硅基图像传感器上，例如用于手机相机的图像传感器，以大大扩展他们的视野，远远超出可见光。这些纳米光子UV/IR量子图像传感器(UV/IR QI)非常重要，因为它们可以与我们手机和其他设备中的摄像头无缝集成，以“看到”可见光谱之外的东西，从而使人眼看不见。这一功能为低成本、大阵列图像传感器进入数十亿美元的UV/IR成像市场打开了大门，包括电力线检测、车辆驾驶员视力增强、生物医学成像和环境监测。该项目将产生一个概念验证的纳米光子UV/IR QIS原型，具有以下独特特征：(1)超高灵敏度，允许单光子检测；(2)与现有图像传感器阵列制造技术兼容；和(3)易于小型化。与领先的竞争技术相比，这些特征提供了以下优势：(1)与现有的硅图像传感器相比，大大扩展了检测光谱范围，远远超出了人类的视觉；(2)比现有的基于GaN(氮化镓)的UV探测器和基于InGaAs(In-GaN-As)的红外探测器具有更高的灵敏度和更大的像素阵列；(3)与现有的日盲紫外光(基于GaN)和短波红外相机(基于InGaAs)相比，成本和重量大幅降低(高达10-100倍)。本项目通过项目过程中的下列任务解决了下列技术差距(S)：(A)将热电子内部光电发射机制与现有的硅QIS器件结构相结合的优化器件设计；(B)选择与硅纳米电子兼容的足够的氧化物和金属纳米结构，以便将光谱扩展到红外区域(即金属/氧化物界面势垒工程)；(C)用于整体集成的器件制造。通过成功演示这一概念验证原型，该团队将开发解决所有这些问题的技术。此外，参与该项目的人员，特别是研究生，将通过开发市场进入原型并有可能建立自己的初创公司，获得创新、创业和技术转化经验。该项目与LaXense，Inc.合作，通过在其现有的光子学平台上提供市场进入应用，加快纳米光子红外光电探测器在这一技术转化工作中的商业化进程。

项目成果

An Efficient Nanophotonic Hot Electron Solar-Blind UV Detector

• DOI: 10.1021/acsphotonics.8b01055
• 发表时间: 2018-09
• 期刊: ACS Photonics
• 影响因子: 7
• 作者: Zhiyuan Wang;Xiaoxin Wang;Jifeng Liu

GeSn on Insulators (GeSnOI) Toward Mid-infrared Integrated Photonics

• DOI: 10.3389/fphy.2019.00134
• 发表时间: 2019-09
• 期刊: Frontiers in Physics
• 影响因子: 3.1
• 作者: Xiaoxin Wang;A. C. Cuervo Covian;Lisa Je;Sidan Fu;Haofeng Li;J. Piao;Jifeng Liu