PFI:AIR - TT: Hot Electron Nanophotonic UV/IR CMOS Quanta Image Sensors and Photodetectors

这个PFI: AIR技术翻译项目的重点是将一种新型的纳米光子紫外/红外光电探测器结构转换到现有的硅基图像传感器上，例如用于手机相机的传感器，以极大地扩展其视野，远远超出可见光。这些纳米光子紫外/红外量子图像传感器（UV/IR QIS）非常重要，因为它们可以与我们手机和其他设备中的摄像头无缝集成，以“看到”可见光谱之外的东西，因此人眼是看不见的。这一特性为低成本、大阵列图像传感器进入价值数十亿美元的紫外/红外成像市场打开了大门，包括电力线检测、车辆驾驶员视觉增强、生物医学成像和环境监测。该项目将产生一个概念验证的纳米光子紫外/红外QIS原型，具有以下独特的特点：(1)超高灵敏度，允许单光子检测；(2)与现有图像传感器阵列制造技术的兼容性；(3)易于小型化。与领先的竞争技术相比，这些特性提供了以下优势：(1)与现有的硅图像传感器相比，显著扩展了检测光谱范围，远远超出了人类视觉；(2)与现有的GaN（氮化镓）基紫外探测器和InGaAs（铟镓砷）基红外探测器相比，灵敏度更高，像素阵列更大；(3)与现有的太阳失明UV（基于GaN）和短波红外相机（基于InGaAs）相比，成本和重量大幅降低（高达10-100倍）。本项目通过项目过程中的以下任务，解决了以下技术差距：(A)将热电子内部光电机制与现有硅QIS器件结构集成的器件优化设计；(B)选择与硅纳米电子学兼容的适当的氧化物和金属纳米结构，将光谱扩展到红外区（即金属/氧化物界面势垒工程）；(C)整体集成的器件制造。通过成功地演示这个概念验证原型，团队将开发解决所有这些问题的技术。此外，参与该项目的人员，特别是研究生，将通过开发进入市场的原型和可能成立自己的初创公司，获得创新、创业和技术翻译经验。该项目与LaXense公司合作，通过在他们现有的光子学平台上提供市场准入应用，加快纳米光子红外光电探测器的商业化。

This PFI: AIR Technology Translation project focuses on translating a novel nanophotonic ultraviolet(UV)/infrared(IR) photodetector structure onto existing silicon-based image sensors, such as those used in cell phone cameras, to greatly extend their vision well beyond the visible light.  These Nanophotonic UV/IR Quanta Image Sensors (UV/IR QIS) are important because they can be seamlessly integrated with the cameras in our cell phones and other devices to "see" things that are outside of the visible spectrum and thus invisible to human eyes. This feature opens the door for low-cost, large-arrayed image sensors to enter the billion-dollar market of UV/IR imaging, including powerline inspection, vehicle driver vision enhancement, biomedical imaging, and environmental monitoring.  The project will result in a proof-of-concept prototype of nanophotonic UV/IR QIS with the following unique features: (1) ultrahigh sensitivity allowing single photon detection; (2) compatibility with existing image sensor array fabrication technology; and (3) ease of miniaturization. These features provide the following advantages when compared to the leading competing technologies: (1) Significantly extended detection spectral range well beyond human vision compared to existing silicon image sensors; (2) Higher sensitivity and larger pixel array than existing GaN (Gallium Nitride)-based UV detectors and InGaAs (Indium Gallium Arsenic)-based IR detectors; and (3) Drastic cost and weight reduction (up to 10-100x) compared to existing solar-blind UV (based on GaN) and short wave IR cameras (based on InGaAs).This project addresses the following technology gap(s) through the following tasks over the course of the project: (A) Optimized device design integrating hot-electron internal photoemission mechanism with existing silicon QIS device structure; (B) Choosing adequate oxide and metallic nanostructures compatible with silicon nanoelectronics for spectral extension into the IR regime (i.e. metal/oxide interfacial barrier engineering); (C) Device fabrication for overall integration. By successfully demonstrating this proof-of-concept prototype, the team will develop techniques to address all these issues. In addition, personnel involved in this project, especially the graduate students, will receive innovation, entrepreneurship, and technology translation experiences through the development of market-entry prototypes and potentially founding their own start-up company.The project engages LaXense, Inc. to expedite the commercialization of the nanophotonic IR photodetectors in this technology translation effort by providing a market-entry application in their existing photonics platform.