EAGER: Enhanced Optoelectronic Devices Through Integration of Single-Crystal Graphene and Bernal Bilayer and Trilayer Graphene

EAGER:通过单晶石墨烯与伯纳尔双层和三层石墨烯的集成增强光电器件

基本信息

  • 批准号:
    1256113
  • 负责人:
  • 金额:
    $ 12.01万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2013
  • 资助国家:
    美国
  • 起止时间:
    2013-03-15 至 2017-02-28
  • 项目状态:
    已结题

项目摘要

The objective of this research is to employ graphene transparent electrical contacts atop mid-infrared semiconductor lasers to determine the fundamental physical mechanisms that critically limit high-temperature operation. The approach is to use antimonide-based semiconductor lasers as the platform to test optical transparency, electrical conductivity, and the heat dissipation efficacy of single and few-layer graphene. Both multi-domain and single-crystal graphene monolayers will be compared as well as bilayers and trilayers with non-Bernal and Bernal AB stacking.The capability graphene will provide to simultaneously optically pump and electrically bias laser devices will enable precise measurements of carrier concentrations above threshold in order to elevate the characteristic temperature of these promising 3?5 µm devices above 100 K. In addition to the high optical transmission and excellent electrical properties of graphene that could lead to lower thresholds, higher output powers, and higher operating temperatures in mid-infrared emitters, graphene has demonstrated excellent potential for heat dissipation, which will be studied and related to its potential as a single-atom-thick heat dissipater in electronic devices in general.Thin, transparent contacts with high mobility and excellent heat dissipation may have extensive applications in optoelectronic devices, including light emitting diodes, lasers, transistors, and other devices that require good thermal management while minimizing the size of the heat dissipating layer. Important applications of mid-infrared devices include environmental monitoring, countermeasures, and free space communications. The PIs will continue to involve women, high school students, and undergraduates in the research and to reach out to K-12 students and teachers.
本研究的目的是在中红外半导体激光器上采用石墨烯透明电触点,以确定限制高温工作的基本物理机制。该方法以锑基半导体激光器为平台,测试单层和多层石墨烯的光学透明度、电导率和散热效率。将比较多畴石墨烯单层和单晶石墨烯单层,以及非Bernal和Bernal AB堆叠的双层和三层石墨烯。石墨烯将同时提供光泵和电偏置激光器件的能力,将能够精确测量超过阈值的载流子浓度,从而提高这些有前途的3?100k以上的5µm器件。除了石墨烯的高光学传输和优异的电学性能可以导致中红外发射器的较低阈值,更高的输出功率和更高的工作温度外,石墨烯还显示了出色的散热潜力,这将被研究并与其作为电子设备中一般单原子厚散热器的潜力相关。具有高迁移率和优异散热性能的薄透明触点可能在光电器件中有广泛的应用,包括发光二极管、激光器、晶体管和其他需要良好热管理同时最小化散热层尺寸的器件。中红外器件的重要应用包括环境监测、对抗和自由空间通信。pi将继续让女性、高中生和本科生参与研究,并向K-12学生和教师伸出援手。

项目成果

期刊论文数量(1)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Optical Pumping and Electrical Injection of a 3.6 μ m Interband Cascade Laser
3.6 μm 带间级联激光器的光泵浦和电注入
  • DOI:
    10.1109/jqe.2022.3146864
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    2.5
  • 作者:
    Olafsen, Linda J.;Stephens, Kyler A.;Devries, Daniella R.
  • 通讯作者:
    Devries, Daniella R.
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Linda Olafsen其他文献

Linda Olafsen的其他文献

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{{ truncateString('Linda Olafsen', 18)}}的其他基金

Reduction of Droop for Antimonide-based Mid-Infrared Lasers
减少锑基中红外激光器的光衰
  • 批准号:
    2131613
  • 财政年份:
    2021
  • 资助金额:
    $ 12.01万
  • 项目类别:
    Standard Grant
Acquisition of a Deep Ultraviolet/Infrared Mask Aligner for Microscale/Nanoscale Device Research and Education
采购深紫外/红外掩模对准器用于微尺度/纳米尺度器件研究和教育
  • 批准号:
    0114252
  • 财政年份:
    2001
  • 资助金额:
    $ 12.01万
  • 项目类别:
    Standard Grant

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