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Reduction of Droop for Antimonide-based Mid-Infrared Lasers

Reduction of Droop for Antimonide-based Mid-Infrared Lasers
减少锑基中红外激光器的光衰
批准号:
2131613
负责人:
Linda Olafsen
金额:
$35.96万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2021
资助国家:
美国
项目状态:
未结题
起止时间:
2021-09-01 至 2025-08-31

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中文摘要
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英文摘要
In the past 60 years since the demonstration of the first laser, great strides have been made in improving the efficiency of semiconductor lasers, including the integration of numerous stages where light is generated at repeated steps rather than at a single interface, multiplying the output power possible through a cascade configuration. Even with these advances, these devices do not yet operate at their theoretical ideal. The goal of this project is to identify loss mechanisms that result in current not being converted to laser light and to apply that knowledge to improving the design of future cascade semiconductor lasers. This would increase output power and efficiency, particularly for devices emitting in the mid-infrared portion of the spectrum, a range of wavelengths important for applications in environmental monitoring, medicine, and homeland security, including chemical sensing and infrared countermeasures. The approach will include not only current injection, optical excitation, and spectroscopy, but also the integration of two-dimensional sheets of graphene with three-dimensional semiconductor alloys containing elements from the third and fifth columns of the periodic table to create a top contact that is simultaneously optically transparent and both electrically and thermally conductive. Improving efficiency has the potential to substantially reduce input power requirements and operating costs while increasing portability. Classroom and laboratory activities proposed in this work, including creation of videos and engaging lessons, will attract K-12 students to careers in electrical and computer engineering and will contribute to retention of female and minority students by exposing them to cutting edge research at the undergraduate and graduate level.Interband cascade lasers employing type-II band alignment in antimonide-based heterostructures have demonstrated recent success at 3-6 micrometer wavelengths, an important spectral range for applications such as chemical sensing, infrared countermeasures, and free-space optical communications. However, there is a “droop” in efficiency when these lasers are driven above threshold that reduces the maximum power obtainable in continuous wave (cw) or single mode operation. The physical cause for the limitations on output power at high temperatures is not understood. Identifying the fundamental mechanisms that prevent carrier pinning will permit creation of new wave function engineering approaches to increase the maximum output power of these lasers at or above room temperature. This will increase the efficiency of devices so that injected carriers above threshold will contribute to laser output and not be lost to spontaneous emission or non-radiative recombination mechanisms, and consequently substantially reduce input power requirements and operating costs. Contacts will be optimized to collect spontaneous emission, and the physical mechanisms of the limiting behavior will be quantified through light-current, light-light, spectral, current-voltage, and pump-probe measurements, all enhanced by the integration of split-ridge fabrication and/or transparent graphene contacts. The high optical, electrical, and thermal conductivity of graphene will not only aid in the collection of data but will advance optoelectronic device development more broadly through the study of the graphene-semiconductor interface. The results of this project will provide a new understanding of the mechanism required to achieve pinning of the carrier densities and ultimately to increase the high-temperature output power in these lasers. This contribution is significant because it will enable the redesign of the active and cladding regions of laser devices in order to increase the maximum cw output power and result in more efficient high temperature operation. Thus, antimonide-based semiconductor lasers would have the potential to be an enabling technology for mid-infrared applications in homeland security, environmental monitoring, and medical applications such as breath analysis for early detection of asthma in children. Outreach activities include video and curriculum development for K-12 students and teachers as well as for freshman engineers.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(1)
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科研奖励(0)
会议论文
Optical Pumping and Electrical Injection of a 3.6 μ m Interband Cascade Laser
3.6 μm 带间级联激光器的光泵浦和电注入
DOI: 10.1109/jqe.2022.3146864
发表时间: 2022
期刊: IEEE Journal of Quantum Electronics
影响因子: 2.5
作者: [Olafsen, Linda J., Stephens, Kyler A., Devries, Daniella R.]
通讯作者: Devries, Daniella R.
EAGER: Enhanced Optoelectronic Devices Through Integration of Single-Crystal Graphene and Bernal Bilayer and Trilayer Graphene
  • 批准号:
    1256113
  • 项目类别:
    Standard Grant
  • 资助金额:
    $12.01万
  • 财政年份:
    2013
  • 负责人:
    Linda Olafsen
  • 依托单位:
Acquisition of a Deep Ultraviolet/Infrared Mask Aligner for Microscale/Nanoscale Device Research and Education
国内基金
海外基金
LED中基于应力的载流子动力学机制及其对droop效应的影响研究
  • 批准号:
    11304048
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    25.0万元
  • 批准年份:
    2013
  • 负责人:
    赵维
  • 依托单位:
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  • 批准号:
    11364034
  • 项目类别:
    地区科学基金项目
  • 资助金额:
    45.0万元
  • 批准年份:
    2013
  • 负责人:
    全知觉
  • 依托单位: