AIR Option 1: Technology Translation: Control of Ion Energy Distributions in Plasma Processing

这个PFI: AIR技术翻译项目的重点是翻译低温等离子体中离子能量分布控制的基础研究，以填补半导体行业能力的空白，以满足未来更高电路密度硅集成电路制造的需求。等离子体加工中离子能量分布控制的转换方法具有单一、可选择能量离子轰击的独特特征，与自我限制电荷中和步骤相结合，在硅集成电路制造中的绝缘和导电层图像化方面提供了示例性的性能优势，包括相对于另一种材料的更高的蚀刻选择性，以及导致产量提高的尺寸控制。与该市场空间中领先的射频偏置竞争技术相比。此外，与竞争的定制波形偏置相比，功率传输的简单性和效率使其具有额外的优势。该项目通过对电极和衬底阶段使用脉冲直流偏压来获得高能离子轰击，然后利用电子通量来中和电荷，从而在绝缘材料上产生无充电问题的单能量离子通量，从而实现了这一目标。该项目将生产一个原型，它将包括一个衬底阶段和一个可以浸入脉冲等离子体的边界电极。在余辉期间，边界电极上的正直流电压产生高能离子轰击，而正直流尖峰到衬底阶段暂时使表面接近等离子体电位，允许电子流中和正表面电荷。该项目将提供概念验证、硬件规格和扩展路径。该伙伴关系使东京电子美国公司和globalfoundries公司在半导体等离子体蚀刻市场空间和其他方面提供指导，包括提供将增加市场空间可信度的测试样品，以及潜在的未来投资，这些投资可以沿着可能导致竞争性商业现实的路径加速该技术的转化。预计在未来十年，潜在的经济影响将是数亿美元的工具销售，这将有助于美国在等离子蚀刻设备市场空间的竞争力。从长远来看，社会影响将是摩尔？s定律，该定律预测集成电路的性能将稳步提高。这将反过来导致计算机和便携式电子设备的持续改进，以及导致新的消费电子产品、医疗设备和其他尚未设想的先进产品的创新。

This PFI: AIR Technology Translation project focuses on translating basic studies of ion energy distribution control in low temperature plasmas to fill a gap in the ability of the semiconductor industry to meet future needs in the manufacturing of silicon integrated circuits with higher circuit density. The translated method for ion energy distribution control in plasma processing has the unique feature of single, selectable energy ion bombardment, that, combined with a self-limiting charge neutralization step, provides exemplary performance advantages in patterning insulating and conducting layers in silicon integrated circuit fabrication, including higher selectivities in etching one material relative to another, and in dimension control leading to improved yields, when compared to the leading competing technology of radio frequency bias in this market space. In addition, the simplicity and efficiency of power delivery, compared to the competing tailored waveform bias gives it an additional advantage. The project accomplishes this goal by using pulsed DC bias to an electrode and the substrate stage to obtain energetic ion bombardment, then electron flux to neutralize charge, resulting in a mono-energetic ion flux with no charge-up issues on insulating materials. The project will produce a prototype that will consist of a substrate stage and a boundary electrode that can be immersed in a pulsed plasma. Positive DC voltage on the boundary electrode during the afterglow produces energetic ion bombardment, while positive DC spikes to the substrate stage temporarily bringing the surface to near plasma potential, allowing electron flow to neutralize positive surface charge. The project will deliver a proof-of-concept, the specifications for this hardware, and a path to scale-up. The partnership engages Tokyo Electron America and GlobalFoundaries to provide guidance in the semiconductor plasma etching market space and other aspects, including supplying test samples that would increase credibility in the market space, and potential future investments that could accelerate the translation of this technology along a path that may result in a competitive commercial reality. The potential economic impact is expected to be hundreds of millions in tool sales in the next decade, which will contribute to the U.S. competitiveness in the plasma etching equipment market space. The societal impact, long term, will be a continuation of Moore?s Law, which predicts the steady improvement in the performance of integrated circuits. This will lead in turn to the continued improvement in computers and portable electronic devices, as well as innovations leading to new consumer electronics products, medical equipment, and other yet to be conceived of advanced products.