AIR Option 1: Technology Translation: Control of Ion Energy Distributions in Plasma Processing

AIR 选项 1：技术转化：等离子体处理中离子能量分布的控制

• 批准号: 1343387
• 负责人: Vincent Donnelly
• 金额: $ 15万
• 依托单位: University of Houston
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-10-01 至 2015-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1343387&HistoricalAwards=false
• 关键词: AIR; Option; Technology; Translation; Control

This PFI: AIR Technology Translation project focuses on translating basic studies of ion energy distribution control in low temperature plasmas to fill a gap in the ability of the semiconductor industry to meet future needs in the manufacturing of silicon integrated circuits with higher circuit density. The translated method for ion energy distribution control in plasma processing has the unique feature of single, selectable energy ion bombardment, that, combined with a self-limiting charge neutralization step, provides exemplary performance advantages in patterning insulating and conducting layers in silicon integrated circuit fabrication, including higher selectivities in etching one material relative to another, and in dimension control leading to improved yields, when compared to the leading competing technology of radio frequency bias in this market space. In addition, the simplicity and efficiency of power delivery, compared to the competing tailored waveform bias gives it an additional advantage. The project accomplishes this goal by using pulsed DC bias to an electrode and the substrate stage to obtain energetic ion bombardment, then electron flux to neutralize charge, resulting in a mono-energetic ion flux with no charge-up issues on insulating materials. The project will produce a prototype that will consist of a substrate stage and a boundary electrode that can be immersed in a pulsed plasma. Positive DC voltage on the boundary electrode during the afterglow produces energetic ion bombardment, while positive DC spikes to the substrate stage temporarily bringing the surface to near plasma potential, allowing electron flow to neutralize positive surface charge. The project will deliver a proof-of-concept, the specifications for this hardware, and a path to scale-up. The partnership engages Tokyo Electron America and GlobalFoundaries to provide guidance in the semiconductor plasma etching market space and other aspects, including supplying test samples that would increase credibility in the market space, and potential future investments that could accelerate the translation of this technology along a path that may result in a competitive commercial reality. The potential economic impact is expected to be hundreds of millions in tool sales in the next decade, which will contribute to the U.S. competitiveness in the plasma etching equipment market space. The societal impact, long term, will be a continuation of Moore?s Law, which predicts the steady improvement in the performance of integrated circuits. This will lead in turn to the continued improvement in computers and portable electronic devices, as well as innovations leading to new consumer electronics products, medical equipment, and other yet to be conceived of advanced products.

该PFI：AIR技术翻译项目的重点是翻译低温等离子体中离子能量分布控制的基础研究，以填补半导体行业在满足未来更高电路密度硅集成电路制造需求方面的能力空白。用于等离子体处理中的离子能量分布控制的转换方法具有单一的、可选择的能量离子轰击的独特特征，其与自限制的电荷中和步骤相结合，在硅集成电路制造中图案化绝缘层和导电层方面提供了示例性的性能优势，包括蚀刻一种材料相对于另一种材料的更高选择性，以及尺寸控制导致改进的产量，当与该市场空间中的射频偏置的领先竞争技术相比时。此外，与竞争的定制波形偏置相比，功率输送的简单性和效率为其提供了额外的优势。该项目通过对电极和衬底台使用脉冲直流偏压来实现这一目标，以获得高能离子轰击，然后电子通量来中和电荷，从而产生单能离子通量，而不会对绝缘材料产生电荷。该项目将产生一个原型，将包括一个基板阶段和一个边界电极，可以沉浸在脉冲等离子体。在余辉期间，边界电极上的正DC电压产生高能离子轰击，而正DC尖峰到达衬底阶段，暂时使表面接近等离子体电位，允许电子流中和正表面电荷。该项目将提供概念验证、该硬件的规格以及扩展路径。 该合作伙伴关系使东京电子美国公司和GlobalFoundry在半导体等离子体蚀刻市场空间和其他方面提供指导，包括提供测试样品，以提高市场空间的可信度，以及未来的潜在投资，可以加速该技术的转化，沿着一条可能导致竞争性商业现实的道路。潜在的经济影响预计将是未来十年数亿美元的工具销售，这将有助于美国在等离子蚀刻设备市场空间的竞争力。长期的社会影响，将是摩尔的延续？s定律，它预示着集成电路性能的稳步提高。这将反过来导致计算机和便携式电子设备的持续改进，以及导致新的消费电子产品，医疗设备和其他尚未设想的先进产品的创新。