I-Corps: Improvements in III-Nitride Materials and Devices through Superatmospheric Epitaxy

I-Corps：通过超大气压外延改进 III 族氮化物材料和器件

• 批准号: 1343541
• 负责人: Edward Stokes
• 金额: $ 5万
• 依托单位: University of North Carolina at Charlotte
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-07-01 至 2015-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1343541&HistoricalAwards=false
• 关键词: Corps; Improvements; III; Nitride; Materials

The purpose of the project is to further develop a technology and methodology in "high pressure" metal organic chemical vapor deposition (HP-MOCVD). This involves a method and technology for high-pressure epitaxial growth of semiconductor crystalline epitaxial layers. The HP-MOCVD reactor was designed with computational fluid dynamics to minimize parasitic gas phase reactions and resulting device-killing particulates. The proposed effort will facilitate availability of new high quality HP-MOCVD semiconductor materials that have applications in optoelectronic devices, in particular, the "deep green" light emitting diodes (LEDs). These LEDs have emission wavelengths near the peak of human eye response and may allow for full color control in future generations of solid state lightingIf successfully developed this project may enable the transition of new HP-MOCVD technology more rapidly into widespread use, accelerating availability of advanced materials and devices to manufacturers and the general population. The HP-MOCVD technology may lead to a fabrication process of III-nitride materials with fewer numbers of crystalline defects. III-nitride materials are used for a wide variety of electronic and optoelectronic devices including LEDs, laser diodes, and high mobility heterostructure field - effect transistors for high-frequency applications and Schottky diodes with high-breakdown field for power electronics. Devices developed using this technology also have the potential to form more energy-efficient lighting and electric power management.

该项目的目的是进一步开发“高压”金属有机化学气相沉积（HP-MOCVD）的技术和方法。本发明涉及用于半导体结晶外延层的高压外延生长的方法和技术。该HP-MOCVD反应器设计与计算流体动力学，以尽量减少寄生气相反应和所产生的设备杀死颗粒。所提出的努力将促进新的高质量HP-MOCVD半导体材料的可用性，其在光电子器件中具有应用，特别是“深绿色”发光二极管（LED）。这些LED的发射波长接近人眼响应的峰值，可以在未来几代固态照明中实现全色控制。如果成功开发，该项目可以使新的HP-MOCVD技术更快地过渡到广泛使用，加速先进材料和设备向制造商和普通人群的可用性。HP-MOCVD技术可以导致具有较少数量的晶体缺陷的III族氮化物材料的制造工艺。III族氮化物材料用于各种各样的电子和光电器件，包括LED、激光二极管和用于高频应用的高迁移率异质结构场效应晶体管以及用于功率电子器件的具有高击穿场的肖特基二极管。使用该技术开发的设备也有可能形成更节能的照明和电力管理。