课题基金 / 基金详情

MRI: Development of a high-pressure MOCVD for III-nitride semiconductor devices

MRI: Development of a high-pressure MOCVD for III-nitride semiconductor devices
MRI:开发用于 III 族氮化物半导体器件的高压 MOCVD
批准号:
0821590
负责人:
Edward Stokes
金额:
$29.88万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-07-01 至 2013-12-31

项目摘要

项目成果

Edward Stokes的其他基金

相似基金

相关文献

中文摘要
翻译
摘要(Ed Stokes, UNC Charlotte)本研究的目的是开发一种用于iii族氮化物半导体材料的超常压MOCVD(金属有机化学气相沉积)外延沉积系统。这种制度目前在美国还不存在。氮化物是光电器件(发光二极管、激光二极管和太阳能电池)和晶体管的关键活性材料。该开发补充了北卡罗来纳大学夏洛特分校正在进行的投资。智力上的优点是通过理解器件性能、材料特性、缺陷形成和生长条件之间的联系,使iii -氮化物光电材料的基础研究成为可能。参与者的记录很好,并且有足够的资源来开展这项工作。本文提出的研究是超低缺陷材料生长研究的基础,而不是增量。提出的光致发光系统将为半导体材料辐射效率的定量分析提供一种手段。该计划的广泛影响是为许多设备研究人员提供独特的光电异质结构,包括:(1)北卡罗来纳大学夏洛特分校几个部门的教师和学生,(2)通过建立北卡罗来纳大学夏洛特分校项目选择的高中生实习生,(3)夏洛特研究所内运营的企业,以及(4)作为光学用户设施的一部分,其他机构的教师和研究人员。学生可以直接操作反应堆,也可以使用提供的新材料制造设备。通过提高照明效率和改进太阳能电池技术,社会影响是相当大的。
英文摘要
0821590 MRI Abstract (Ed Stokes, UNC Charlotte)The objective of this research is to develop a super-atmospheric-pressure MOCVD (metal-organic chemical vapor deposition) epitaxial deposition system for group-III nitride semiconductor materials. Such a system does not presently exist in the United States. III-nitrides are of interest as critical active materials optoelectronic devices (light emitting diodes, laser diodes, and solar cells) and transistors. The development complements ongoing investment at UNC Charlotte.The intellectual merit is in enabling basic research on III-nitride optoelectronic materials, and through understanding of connections between device performance, material properties, defect formation, and growth conditions. The track record of participants is excellent and adequate resources are in place for conducting this work. The proposed research is not incremental but fundamental in the study of ultra-low defect material growth. A proposed photoluminescence system will provide a means for quantitative analysis of radiative efficiency of semiconductor materials.The broader impact of this program is to provide unique optoelectronic heterostructures to many device researchers including: (1) UNC Charlotte faculty and students in several departments, (2) selected high school student interns through established UNC Charlotte programs, (3) businesses operating within the Charlotte Research Institute, and (4) as part of the Optics User Facilities, faculty and researchers at other institutions. Students will benefit by directly operating the reactor, and also by fabricating devices using novel materials provided. Societal impact is considerable, through increased lighting efficiency and improved solar cell technology.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
I-Corps: Improvements in III-Nitride Materials and Devices through Superatmospheric Epitaxy
国内基金
海外基金
水稻边界发育缺陷突变体abnormal boundary development(abd)的基因克隆与功能分析
Development of a Linear Stochastic Model for Wind Field Reconstruction from Limited Measurement Data
  • 批准号:
    --
  • 项目类别:
    --
  • 资助金额:
    40万元
  • 批准年份:
    2020
  • 负责人:
    Vikrant Gupta
  • 依托单位: