MRI: Development of a high-pressure MOCVD for III-nitride semiconductor devices

MRI：开发用于 III 族氮化物半导体器件的高压 MOCVD

• 批准号: 0821590
• 负责人: Edward Stokes
• 金额: $ 29.88万
• 依托单位: University of North Carolina at Charlotte
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-07-01 至 2013-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0821590&HistoricalAwards=false
• 关键词: MRI; Development; pressure; MOCVD; III

0821590 MRI Abstract (Ed Stokes, UNC Charlotte)The objective of this research is to develop a super-atmospheric-pressure MOCVD (metal-organic chemical vapor deposition) epitaxial deposition system for group-III nitride semiconductor materials. Such a system does not presently exist in the United States. III-nitrides are of interest as critical active materials optoelectronic devices (light emitting diodes, laser diodes, and solar cells) and transistors. The development complements ongoing investment at UNC Charlotte.The intellectual merit is in enabling basic research on III-nitride optoelectronic materials, and through understanding of connections between device performance, material properties, defect formation, and growth conditions. The track record of participants is excellent and adequate resources are in place for conducting this work. The proposed research is not incremental but fundamental in the study of ultra-low defect material growth. A proposed photoluminescence system will provide a means for quantitative analysis of radiative efficiency of semiconductor materials.The broader impact of this program is to provide unique optoelectronic heterostructures to many device researchers including: (1) UNC Charlotte faculty and students in several departments, (2) selected high school student interns through established UNC Charlotte programs, (3) businesses operating within the Charlotte Research Institute, and (4) as part of the Optics User Facilities, faculty and researchers at other institutions. Students will benefit by directly operating the reactor, and also by fabricating devices using novel materials provided. Societal impact is considerable, through increased lighting efficiency and improved solar cell technology.

0821590磁共振成像摘要(Ed Stokes，北卡罗来纳大学夏洛特分校)本研究的目标是开发一种用于第三族氮化物半导体材料的超常压金属-有机化学气相沉积(MOCVD)外延沉积系统。这样的制度目前在美国还不存在。III-氮化物是重要的活性材料、光电子器件(发光二极管、激光二极管和太阳能电池)和晶体管。这一开发是对北卡罗来纳大学夏洛特分校正在进行的投资的补充。智力优势在于能够对III-氮化物光电材料进行基础研究，并通过了解器件性能、材料特性、缺陷形成和生长条件之间的联系。与会者的记录很好，而且有足够的资源来开展这项工作。所提出的研究不是渐进式的，而是超低缺陷材料生长研究的基础。该计划的更广泛的影响是为许多设备研究人员提供独特的光电异质结构，包括：(1)北卡罗来纳大学夏洛特分校几个系的教职员工和学生，(2)通过建立的北卡罗来纳大学夏洛特分校计划挑选高中生实习生，(3)在夏洛特研究所内运营的企业，以及(4)作为光学用户设施的一部分，教职员工和其他机构的研究人员。学生将受益于直接操作反应堆，以及使用提供的新材料制造设备。通过提高照明效率和改进太阳能电池技术，社会影响是相当大的。