MRI: Development of a high-pressure MOCVD for III-nitride semiconductor devices
MRI: Development of a high-pressure MOCVD for III-nitride semiconductor devices
批准号:
0821590
负责人:
Edward Stokes
金额:
$29.88万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-07-01 至 2013-12-31
中文摘要
0821590 MRI摘要(艾德斯托克斯,夏洛特夏洛特)本研究的目的是开发用于III族氮化物半导体材料的超大气压MOCVD(金属有机化学气相沉积)外延沉积系统。目前美国还没有这样的制度。III族氮化物作为光电器件(发光二极管、激光二极管和太阳能电池)和晶体管的关键活性材料而受到关注。该开发补充了在夏洛特夏洛特正在进行的投资。智力的优点是,通过理解器件性能,材料特性,缺陷形成和生长条件之间的联系,可以对III族氮化物光电材料进行基础研究。参与者的业绩记录非常好,并为开展这项工作提供了充足的资源。该研究在超低缺陷材料生长的研究中不是增量的,而是基础的。提出的光致发光系统将提供一种半导体材料辐射效率的定量分析方法。该计划的更广泛影响是为许多器件研究人员提供独特的光电异质结构,包括:(1)在几个系挑选夏洛特的教职员工和学生,(2)通过既定的夏洛特夏洛特计划挑选高中学生实习生,(3)在夏洛特研究所内经营的企业,以及(4)作为光学用户设施的一部分,其他机构的教师和研究人员。学生将受益于直接操作反应堆,并通过使用提供的新材料制造设备。通过提高照明效率和改进太阳能电池技术,社会影响相当大。
英文摘要
0821590 MRI Abstract (Ed Stokes, UNC Charlotte)The objective of this research is to develop a super-atmospheric-pressure MOCVD (metal-organic chemical vapor deposition) epitaxial deposition system for group-III nitride semiconductor materials. Such a system does not presently exist in the United States. III-nitrides are of interest as critical active materials optoelectronic devices (light emitting diodes, laser diodes, and solar cells) and transistors. The development complements ongoing investment at UNC Charlotte.The intellectual merit is in enabling basic research on III-nitride optoelectronic materials, and through understanding of connections between device performance, material properties, defect formation, and growth conditions. The track record of participants is excellent and adequate resources are in place for conducting this work. The proposed research is not incremental but fundamental in the study of ultra-low defect material growth. A proposed photoluminescence system will provide a means for quantitative analysis of radiative efficiency of semiconductor materials.The broader impact of this program is to provide unique optoelectronic heterostructures to many device researchers including: (1) UNC Charlotte faculty and students in several departments, (2) selected high school student interns through established UNC Charlotte programs, (3) businesses operating within the Charlotte Research Institute, and (4) as part of the Optics User Facilities, faculty and researchers at other institutions. Students will benefit by directly operating the reactor, and also by fabricating devices using novel materials provided. Societal impact is considerable, through increased lighting efficiency and improved solar cell technology.
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会议论文
I-Corps: Improvements in III-Nitride Materials and Devices through Superatmospheric Epitaxy
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批准号:1343541
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项目类别:Standard Grant
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资助金额:$5.0万
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财政年份:2013
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负责人:Edward Stokes
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依托单位:
国内基金
海外基金
水稻边界发育缺陷突变体abnormal boundary development(abd)的基因克隆与功能分析
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批准号:32070202
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项目类别:面上项目
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资助金额:58.0万元
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批准年份:2020
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负责人:汪泉
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依托单位:
Development of a Linear Stochastic Model for Wind Field Reconstruction from Limited Measurement Data
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项目类别:--
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资助金额:40万元
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批准年份:2020
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负责人:Vikrant Gupta
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依托单位: