CAREER: Graphene-based Ultra-responsive Photo-sensing Devices
CAREER: Graphene-based Ultra-responsive Photo-sensing Devices
批准号:
1351424
负责人:
Swastik Kar
金额:
$40.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2014
资助国家:
美国
项目状态:
已结题
起止时间:
2014-01-01 至 2019-12-31
中文摘要
本研究的目的是研究石墨烯独特的电子性质如何影响石墨烯与一系列半导体和纳米材料的异质结的光致载流子注入,传输和复合的性质;并可能利用这些机制用于各种先进的光电应用。该方法将研究在不同的光子能量、掺杂水平和栅电压下,石墨烯与硅、氧化锌、二硫化钼和硒化铋等材料的结的光吸收、光电流和光致发光光谱。智力优势:光诱导载流子通过异质结注入石墨烯,展示了许多不同寻常的和智力刺激的特性。这些载流子动力学的全面调查将导致丰富的新的物理见解有关的性质注入/复合在原子薄界面,其相互作用与超快迁移率和约束的状态密度在石墨烯。 将研究各种结,并利用由此获得的工程知识开发一系列异常灵敏的光开关、光捕获、光度测定、成像和光谱应用。更广泛的影响:拟议的研究和教育计划可能会导致成像、检测、分析、通信和能量收集技术的变革。它将创造出有资格在一些最具影响力的研究领域从事学术和工业职业的技能娴熟的研究生和本科生。当地的高中学生和教师将接触到世界一流的,以研究为基础的,学习增强和职业催化教育。传统上代表性不足的社区将积极融入STEM领域的研究和教育环境。
英文摘要
The objective of this research is to investigate how the unique electronic properties of graphene impacts the nature of photo-induced carrier injection, transport and recombination at heterojunctions of graphene with a range of semiconductors and nanomaterials; and to potentially harness these mechanisms for various advanced optoelectronic applications. The approach will be to study photo-absorption, photocurrent, and photoluminescence spectroscopy at junctions of graphene with materials such as silicon, zinc oxide, molybdenum disulphide, and bismuth selenide at different photon energies, doping levels, and gate voltages.Intellectual Merit: Photo-induced carriers injected across a heterojunction into graphene demonstrate a number of unusual and intellectually stimulating properties. A comprehensive investigation of these carrier dynamics will lead to rich new physical insights related to the nature of injection/recombination across atomically thin interfaces, and its interplay with ultrafast mobility and constrained density of states in graphene. A variety of junctions will be investigated, and the engineering knowledge thus acquired will be utilized to develop a range of exceptionally sensitive photo-switching, photo-harvesting, photometry, imaging, and spectrometric applications.Broader Impact: The proposed research and education program can potentially result in transformative changes in imaging, detection, analysis, communication and energy-harvesting technologies. It will create exceptionally skilled graduate and undergraduate students qualified to pursue both academic and industrial careers in some of the most topically impactful research areas. Local high-school students and teachers will be exposed to world-class, research-based, learning-enhanced and career-catalyzing education. Traditionally under-represented communities will be proactively integrated into a stimulating environment of research and education in STEM fields.
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会议论文
Symposium on Atomically Thin, Layered, and 2D Non-Carbon Materials and Systems. To Be Held in Boston, November 26 to December 1,2017.
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批准号:1740467
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项目类别:Standard Grant
-
资助金额:$1.19万
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财政年份:2017
-
负责人:Swastik Kar
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依托单位:
I-Corps: Miniaturized ultra-sensitive ion detectors for radiation sensing and monitoring
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批准号:1659090
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项目类别:Standard Grant
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资助金额:$5.0万
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财政年份:2016
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负责人:Swastik Kar
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依托单位:
High Performance Photoswitches Using Carbon Nanotube - Si Heterojunctions for Optoelectronic Logic devices
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批准号:1202376
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项目类别:Standard Grant
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资助金额:$30.89万
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财政年份:2012
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负责人:Swastik Kar
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依托单位:
Collaborative Research: Ultra-high Performance Carbon Nanotube "Parallel Nanotube Architectures" (PNAs) for On-chip Gigascale Local and Global Interconnects
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批准号:1102481
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项目类别:Standard Grant
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资助金额:$16.34万
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财政年份:2010
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负责人:Swastik Kar
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依托单位:
Collaborative Research: Ultra-high Performance Carbon Nanotube "Parallel Nanotube Architectures" (PNAs) for On-chip Gigascale Local and Global Interconnects
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批准号:0925708
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项目类别:Standard Grant
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资助金额:$18.91万
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财政年份:2009
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负责人:Swastik Kar
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依托单位:
国内基金
海外基金
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