EFRI 2-DARE: Monolayer Heterostructures: Epitaxy to Beyond-CMOS Devices

EFRI 2-DARE:单层异质结构:外延到超越 CMOS 器件

基本信息

  • 批准号:
    1433490
  • 负责人:
  • 金额:
    $ 200万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2014
  • 资助国家:
    美国
  • 起止时间:
    2014-11-01 至 2018-10-31
  • 项目状态:
    已结题

项目摘要

Title: EFRI 2-DARE: monolayer heterostructures: epitaxy to beyond-CMOS devices Non-Technical: Discovering new materials and learning how to harvest their properties are among the most important activities for advancing our society. Over the past six decades, the advent of semiconductors in particular, has dramatically changed the ways in which we compute, communicate and learn. Still, we long for opto- and electronics that are even more energy-efficient, compact, flexible and convenient. New materials drive novel applications, and innovative devices demand creative materials research. This bidirectional thinking is epitomized in this EFRI 2-DARE project. The material system of choice is 2-dimensional (2D) layered materials. Vigorous investigations in the research laboratories will result in high quality student training, enrich our knowledge to improve teaching in the classroom, and lead to innovations that drive the progress of society. The leadership embodied in the research, teaching, mentoring, service, outreach activities in this project in turn better prepares the next generation of the STEM work force.Technical: The rapid and recent advances in graphene, a single sheet of carbon atoms arranged in a two-dimensional (2D) honeycomb crystal, have raised tantalizing questions for other examples of 2D materials that might have distinct and useful properties. "The rich variety of properties that 2D layer materials offer can potentially be engineered on demand, and they create exciting prospects for applications such as in electronics, sensing, photonics, flexible electronics, energy harvesting and storage, thermal management, mechanical structures, catalysis, and bio-engineering in the future," (NSF EFRI-2014 program solicitation). In this proposal, the aim is to educate the next generation of scientists and engineers to address the grand challenges in energy, where an interdisciplinary team with complimentary expertise will use an integrated approach for research and outreach. Based on the rapid progress made by the PIs in the 2D layered materials and heterostructure growth by molecular beam epitaxy, this EFRI team proposes transformative approaches to control electronic doping and heterostructure formation with monolayer precision. Based on the resulting materials, the team will also explore theoretically and experimentally the following three device themes. 1) Beyond CMOS switches: searching for correlated effects. This represents a fundamental departure from the conventional electronic switch mechanism. If successful, not only will the basic science in correlated electron systems be advanced, but this will also lead to more energy efficient switches, which addresses an urgent national need and grand challenge. 2) Gated RF oscillators: exploring charge density waves. This also represents a fundamental departure from the conventional RF sources. Gated charge density waves promises a tunable RF source over an extremely wide bandwidth in the terahertz frequency region, which is a critical element in closing the THz technology gap. 3) Gated thermoelectric batteries: investigating thermoelectric properties of 2D crystals. The TMD materials have a unique combination of low thermal conductivity and high electrical conductivity. Their 2D nature also provides an ideal platform to investigate 2D thermoelectric effects.
标题:EFRI 2-DARE:单层异质结构:从外延到Beyond-CMOS器件非技术:发现新材料并学习如何获得它们的特性是推动我们社会进步的最重要的活动之一。在过去的60年里,特别是半导体的出现,极大地改变了我们计算、交流和学习的方式。尽管如此,我们仍然渴望更节能、更紧凑、更灵活、更方便的光电产品。新材料推动了新的应用,创新的设备需要创造性的材料研究。这种双向思维在EFRI 2-DARE项目中得到了体现。选择的材料系统是二维(2D)分层材料。研究实验室的积极探索将带来高质量的学生培养,丰富我们的知识,改善课堂教学,并引领创新,推动社会进步。该项目在研究、教学、指导、服务和推广活动中体现的领导力反过来又能更好地为下一代STEM工作队伍做好准备。技术:石墨烯的快速和最新进展,即在二维(2D)蜂窝晶体中排列的单层碳原子,为其他可能具有独特和有用性质的2D材料的例子提出了诱人的问题。NSF EFRI-2014计划征集报告指出:“2D层材料所提供的丰富特性可按需设计,它们为未来的应用创造了令人兴奋的前景,如电子、传感、光子学、柔性电子、能量收集和存储、热管理、机械结构、催化和生物工程。在这项提议中,目的是教育下一代科学家和工程师应对能源领域的重大挑战,在能源领域,拥有互补专业知识的跨学科团队将使用综合方法进行研究和推广。基于PI在2D层状材料和分子束外延异质结生长方面取得的快速进展,EFRI团队提出了以单分子层精度控制电子掺杂和异质结形成的变革性方法。在所得材料的基础上,该团队还将从理论和实验上探索以下三个设备主题。1)超越cmos开关:寻找相关效应。这代表着从根本上背离了传统的电子开关机制。如果成功,不仅相关电子系统的基础科学将得到推进,而且这还将导致更节能的开关,这将满足国家的迫切需求和巨大挑战。2)选通射频振荡器:探索电荷密度波。这也代表了与传统射频源的根本背离。选通电荷密度波有望在太赫兹频率范围内提供极宽带宽的可调谐射频源,这是缩小太赫兹技术差距的关键因素。3)门控温差电池:研究2D晶体的热电性能。TMD材料具有低导热系数和高导电率的独特组合。它们的2D特性也为研究2D热电效应提供了一个理想的平台。

项目成果

期刊论文数量(0)
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科研奖励数量(0)
会议论文数量(0)
专利数量(0)

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Huili Grace Xing其他文献

高品質AlNテンプレートの歪制御と電子デバイス応用
高质量 AlN 模板的应变控制和电子设备应用
  • DOI:
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    0
  • 作者:
    林侑介;藤平哲也;Yongjin Cho;Huili Grace Xing;Debdeep Jena;三宅秀人;酒井朗
  • 通讯作者:
    酒井朗

Huili Grace Xing的其他文献

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{{ truncateString('Huili Grace Xing', 18)}}的其他基金

KAUST-NSF Research Conference on Interactive Electronics; King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
KAUST-NSF 交互式电子学研究会议;
  • 批准号:
    1713747
  • 财政年份:
    2017
  • 资助金额:
    $ 200万
  • 项目类别:
    Standard Grant
E2CDA: TYPE 1: Durable, Energy-Efficient, Pausable Processing in Polymorphic Memories (DEEP3M)
E2CDA:类型 1:多态存储器中的耐用、节能、可暂停处理 (DEEP3M)
  • 批准号:
    1740286
  • 财政年份:
    2017
  • 资助金额:
    $ 200万
  • 项目类别:
    Continuing Grant
NSF EFRI-2DARE Grantees Meeting 2016
2016 年 NSF EFRI-2DARE 受资助者会议
  • 批准号:
    1721198
  • 财政年份:
    2017
  • 资助金额:
    $ 200万
  • 项目类别:
    Standard Grant
MRI: Development of an Apertureless Near-Field Scanning Optical and Magneto-Optical Kerr Effect Microscope for Nano-Science Applications
MRI:开发用于纳米科学应用的无孔径近场扫描光学和磁光克尔效应显微镜
  • 批准号:
    1631282
  • 财政年份:
    2015
  • 资助金额:
    $ 200万
  • 项目类别:
    Standard Grant
CAREER: Graphene and Graphene Nanoribbon Optoelectronic Properties and Devices
职业:石墨烯和石墨烯纳米带光电特性和器件
  • 批准号:
    1530723
  • 财政年份:
    2014
  • 资助金额:
    $ 200万
  • 项目类别:
    Standard Grant
MRI: Development of an Apertureless Near-Field Scanning Optical and Magneto-Optical Kerr Effect Microscope for Nano-Science Applications
MRI:开发用于纳米科学应用的无孔径近场扫描光学和磁光克尔效应显微镜
  • 批准号:
    1338010
  • 财政年份:
    2013
  • 资助金额:
    $ 200万
  • 项目类别:
    Standard Grant
CAREER: Graphene and Graphene Nanoribbon Optoelectronic Properties and Devices
职业:石墨烯和石墨烯纳米带光电特性和器件
  • 批准号:
    0846910
  • 财政年份:
    2009
  • 资助金额:
    $ 200万
  • 项目类别:
    Standard Grant

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