EFRI 2-DARE: Enhancing Electronic and Thermal Properties in Epitopotaxial Ge/Sn Graphane Heterostructures

EFRI 2-DARE：增强外延 Ge/Sn 石墨烷异质结构的电子和热性能

• 批准号: 1433467
• 负责人: Joshua Goldberger
• 金额: $ 200万
• 依托单位: Ohio State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-09-01 至 2020-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1433467&HistoricalAwards=false
• 关键词: EFRI; DARE; Enhancing; Electronic; Thermal

Non-Technical: The ability to design new materials in which the flow of electricity and heat can be tailored in a controllable way is fundamentally important for addressing the challenges of modern science and technology. It is essential to numerous fields including microelectronics, optoelectronics and thermoelectrics. Two-dimensional (2D) layered materials open new opportunities for addressing this important need. While the vast amount of research on 2D layered structures has been focused on the 2D carbon crystal, graphene, the goal of the current project will be to fabricate and to understand the properties of 2D layered structures based on Germanium (Ge) and tin (Sn). These Ge/Sn graphane analogue structures offer the possibility to manipulate the electronic, optical and heat transport properties by adjusting the number of layers, chemical composition of constituent layers and tunable chemical bonding between layers, as well as showing great promise for a wide range of electronic and thermoelectric applications. State-of-the-art materials synthesis, measurements and theoretical modeling methodologies will be established for understanding how to tune electronic and thermal transport in 2D materials beyond graphene. Furthermore, we will develop a novel, scalable route towards integrating 2D materials directly into existing semiconductor growth and fabrication technology. Complementing the project's major research goals are its broader aims, which include efforts to enhance thermal science education in the participating institutions, and to increase awareness in local communities of the importance and excitement of cutting edge research in thermal sciences, which has often been perceived as a mature field because of insufficient interactions between the research community and the public. Finally, this multi-institutional collaboration will allow the research team to carry out a joint effort to recruit and retain students from underrepresented groups across multiple scientific and engineering disciplines.Technical: The overall research objective of this project is to develop the fundamental knowledge needed for enhancing the coupled electronic and thermal properties of Ge/Sn graphane analogues, a promising system that offers the ability to vary the anisotropic electronic and thermal properties along both the in-plane and cross-plane directions by using different main group elements and different surface-terminating ligands. To accomplish this, a novel, scalable synthesis method will be developed for the direct integration of Ge/Sn van der Waals heterostructures into existing semiconductor fabrication processes, by combining the epitaxial growth of precursor thin films on Ge(111) wafers with their topotactic conversion into the van der Waals material. These "epitopotaxial" structures will facilitate a comprehensive suite of cutting edge measurements of in-plane and cross-plane electronic, thermal, and thermoelectric properties of single sheets, multilayer heterostructures, bulk 2D crystals, and different substrate-2D interfaces. These measurements will in turn be supported by first-principle theoretical calculations to verify, predict and establish the underlying principles for controlling anisotropic thermal and electronic properties of these 2D van der Waals heterostructured materials. Elucidating the key mechanisms for controlling anisotropic thermal, electronic, and thermoelectric properties in single and multilayered 2D van der Waals systems will facilitate the development of next-generation electronic and thermoelectric devices.

非技术：设计能够以可控方式定制电流和热流的新材料的能力对于应对现代科学和技术的挑战至关重要。 它在微电子学、光电子学和热电学等许多领域都是必不可少的。二维（2D）层状材料为满足这一重要需求提供了新的机会。 虽然对2D层状结构的大量研究一直集中在2D碳晶体石墨烯上，但当前项目的目标将是制造和了解基于锗（Ge）和锡（Sn）的2D层状结构的特性。 这些Ge/Sn石墨烷类似物结构提供了通过调整层的数量、组成层的化学组成和层之间的可调化学键合来操纵电子、光学和热传输性质的可能性，并且显示出广泛的电子和热电应用的巨大前景。将建立最先进的材料合成，测量和理论建模方法，以了解如何调整石墨烯以外的2D材料中的电子和热传输。此外，我们将开发一种新颖的，可扩展的路线，将2D材料直接集成到现有的半导体生长和制造技术中。 补充该项目的主要研究目标是其更广泛的目标，其中包括努力加强参与机构的热科学教育，并提高当地社区对热科学前沿研究的重要性和兴奋性的认识，由于研究界和公众之间的互动不足，热科学往往被视为一个成熟的领域。 最后，这种多机构合作将使研究团队能够共同努力，从多个科学和工程学科的代表性不足的群体中招募和留住学生。技术：该项目的总体研究目标是发展增强Ge/Sn石墨烷类似物的耦合电子和热性质所需的基础知识，通过使用不同的主族元素和不同的表面封端配体，提供了沿面内和交叉面方向沿着改变各向异性电子和热性质的能力的有前景的体系。为了实现这一点，将开发一种新的、可扩展的合成方法，通过将前体薄膜在Ge（111）晶片上的外延生长与它们向货车范德华材料的拓扑转化相结合，将Ge/Sn货车范德华异质结构直接集成到现有的半导体制造工艺中。这些“外延”结构将有助于一套全面的尖端测量的平面内和跨平面的电子，热，和热电性能的单片，多层异质结构，块体2D晶体，和不同的基板2D接口。 这些测量将反过来支持第一原理理论计算，以验证，预测和建立控制这些二维货车德瓦尔斯异质结构材料的各向异性的热和电子性能的基本原则。 阐明在单层和多层2D货车德瓦尔斯系统中控制各向异性热、电子和热电性质的关键机制将促进下一代电子和热电器件的发展。