Plasmonic coupling of individual quantum dots

单个量子点的等离子体耦合

• 批准号: 21685481
• 负责人: Professor Dr. Harald Giessen
• 金额: --
• 依托单位: Max-Planck-Institut für Festkörperforschung (MPI-FKF)
• 依托单位国家: 德国
• 项目类别: Research Units
• 财政年份: 2006
• 资助国家: 德国
• 起止时间: 2005-12-31 至 2011-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/21685481?language=en
• 关键词: Plasmonic; coupling; individual; quantum; dots

We plan to generate and position single quantum dots by the use of local strain and local electric fields. We plan to put metal nanostructures (both metal dots and metal nanoholes) on top of a semiconductor single quantum well which is buried not too deep below the surface. When cooling down the sample from the preparation temperature to the measurement temperature (typically around T=10K), different thermal expansion coefficients lead to a local strain field underneath the metal nanostructure. Furthermore, local contact potential lead to a local band bending of the conduction and valence bands of the quantum well excitonic states. By tailoring the combination of quantum well depth, metal nanostructure type, and metal nanostructure size, we aim to generate highly localized, well positioned individual quantum dots as well as quantum dot arrays. The appeal of such structures is the combination of high-quality quantum well excitons with external potential generation by strain and electrostatic fields, which do not act as detrimental on the optical properties of quantum dots as does surface roughness in self-organized or etched quantum dots.

我们计划利用局域应变和局域电场来产生和定位单量子点。我们计划将金属纳米结构（金属点和金属纳米孔）置于半导体单量子阱的顶部，该量子阱埋在表面以下不太深。当将样品从制备温度冷却到测量温度（通常约T=10K）时，不同的热膨胀系数导致金属纳米结构下方的局部应变场。此外，局域接触势导致量子阱激子导带和价带的局域带弯曲。通过调整量子阱深度、金属纳米结构类型和金属纳米结构尺寸的组合，我们的目标是产生高度局部化的、良好定位的单个量子点以及量子点阵列。这种结构的吸引力在于高质量量子阱激子与通过应变和静电场产生的外部电势的组合，其不会像自组织或蚀刻量子点中的表面粗糙度那样对量子点的光学性质起有害作用。