Ge/Si quantum dots in the sub 20nm regime - exact positioning and electrical functionalisation

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The goal of this project is to implement SiGe/Si devices on single positioned quantum dots, to test the electrical functions in competition to more classical approaches, and to fabricate the structures as part of integrated mm-wave circuits. Silicon-based systems are of high importance in microelectronics, but additionally this material system can be considered as a model system for strain adjustment and band alignment in indirect semiconductor couples. The devices and circuits proposed include mm-wave rectifying antenna, oscillators, interband tunneling diodes and strained channel field effect transistors (FET). The concept of DotFET s where the strain field is created by the Ge dot needs strongly positioned islands to be feasible. The positioning is driven by the self-assembled growth of Ge islands on pre-patterned surfaces and by the adjustment of proper strain distribution around the islands with so-called virtual substrates.