Ge/Si quantum dots in the sub 20nm regime - exact positioning and electrical functionalisation

该项目的目标是在单定位量子点上实现SiGe/Si器件，测试其电气功能与更经典的方法竞争，并将其结构制造为集成毫米波电路的一部分。硅基系统在微电子学中具有重要的意义，但除此之外，这种材料系统可以被认为是间接半导体耦合中应变调整和带对准的模型系统。提出的器件和电路包括毫米波整流天线、振荡器、带间隧道二极管和应变沟道场效应晶体管（FET）。由Ge点产生应变场的DotFET的概念需要强大的定位岛才能实现。这种定位是由Ge岛在预图型表面上的自组装生长驱动的，并通过所谓的虚拟基板调整岛屿周围的适当应变分布。

The goal of this project is to implement SiGe/Si devices on single positioned quantum dots, to test the electrical functions in competition to more classical approaches, and to fabricate the structures as part of integrated mm-wave circuits. Silicon-based systems are of high importance in microelectronics, but additionally this material system can be considered as a model system for strain adjustment and band alignment in indirect semiconductor couples. The devices and circuits proposed include mm-wave rectifying antenna, oscillators, interband tunneling diodes and strained channel field effect transistors (FET). The concept of DotFET s where the strain field is created by the Ge dot needs strongly positioned islands to be feasible. The positioning is driven by the self-assembled growth of Ge islands on pre-patterned surfaces and by the adjustment of proper strain distribution around the islands with so-called virtual substrates.