Development of Ga2O3 Based Structures for High Power Applications

用于高功率应用的 Ga2O3 基结构的开发

• 批准号: 1506159
• 负责人: Tania Paskova
• 金额: $ 42万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-08-01 至 2021-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1506159&HistoricalAwards=false
• 关键词: Development; Ga2O3; Based; Structures; Power

Non-Technical Description: In the past decade, wide-bandgap semiconductor materials such as GaN have enabled a variety of optoelectronic and electronic technologies by providing new capabilities at elevated temperatures and high voltages. This research project focuses on investigating the growth and fundamental properties of gallium oxide (Ga2O3), a material that has not been extensively explored for electronics. The knowledge gained in this study leads to high-quality gallium oxide materials with a low defect density and controllable electronic properties for high-power devices. The project topic increases public awareness of the importance of novel materials for energy-efficient power electronics, essential to our future quality of life. In addition, graduate and undergraduate students are trained in materials science research, with a special emphasis on involving underrepresented groups. The project also fosters interdisciplinary collaborations at local, national and international levels and transforms fundamental materials research findings to industry.Technical Description: The scientific objective of this project is to establish the relationship between the thin-film growth and the structural and physical properties of Ga2O3. The Ga2O3 thin films are deposited using three complimentary growth techniques including pulsed laser deposition, pulsed electron deposition and metalorganic vapor phase deposition with the ultimate goal to explore its potential for power electronics. The research explores: (i) the optimum growth conditions of beta-Ga2O3 through homoepitaxy and heteroepitaxy; (ii) interface strategies for defect reduction; (iii) doping options (e.g., Si, Sn and Mg) for high incorporation efficiency and enhanced conductivities; (iv) annealing procedures for improving the structural and electrical properties; and (v) in-plane anisotropy and its effects on electrical and thermal transport properties. The study provides a fundamental understanding of the roles of defects and dopants on the overall structural and electrical properties in this wide bandgap material.

非技术描述：在过去的十年中，GaN 等宽带隙半导体材料通过在高温和高电压下提供新功能，实现了各种光电和电子技术。该研究项目重点研究氧化镓 (Ga2O3) 的生长和基本特性，这种材料尚未在电子领域得到广泛探索。这项研究中获得的知识可以为高功率器件带来具有低缺陷密度和可控电子性能的高质量氧化镓材料。该项目主题提高了公众对节能电力电子新型材料重要性的认识，这对我们未来的生活质量至关重要。此外，研究生和本科生接受材料科学研究培训，特别强调让代表性不足的群体参与进来。该项目还促进地方、国家和国际层面的跨学科合作，并将基础材料研究成果转化为产业。技术描述：该项目的科学目标是建立薄膜生长与 Ga2O3 的结构和物理性质之间的关系。 Ga2O3 薄膜采用三种互补的生长技术进行沉积，包括脉冲激光沉积、脉冲电子沉积和金属有机气相沉积，最终目标是探索其在电力电子领域的潜力。研究探索：（i）通过同质外延和异质外延制备β-Ga2O3的最佳生长条件； (ii) 减少缺陷的界面策略； (iii) 掺杂选择（例如，Si、Sn 和 Mg），以实现高掺入效率和增强的电导率； (iv)用于改善结构和电性能的退火程序； (v)面内各向异性及其对电和热传输特性的影响。该研究提供了对缺陷和掺杂剂对这种宽带隙材料的整体结构和电性能的作用的基本了解。