Development of Ga2O3 Based Structures for High Power Applications

非技术描述：在过去的十年中，宽带隙半导体材料（如GaN）通过在高温和高电压下提供新的功能，实现了各种光电和电子技术。该研究项目的重点是研究氧化镓（Ga 2 O3）的生长和基本特性，这是一种尚未被广泛探索用于电子产品的材料。在这项研究中获得的知识导致高品质的氧化镓材料具有低缺陷密度和可控的电子性能的高功率器件。该项目主题提高了公众对节能电力电子新材料重要性的认识，这对我们未来的生活质量至关重要。此外，研究生和本科生接受材料科学研究方面的培训，特别强调参与代表性不足的群体。该项目还促进了地方、国家和国际层面的跨学科合作，并将基础材料研究成果转化为产业。技术说明：该项目的科学目标是建立薄膜生长与Ga 2 O 3的结构和物理性质之间的关系。采用脉冲激光沉积、脉冲电子沉积和金属有机物气相沉积三种互补生长技术制备了Ga 2 O3薄膜，以探索其在电力电子领域的应用潜力。该研究探讨：（i）通过同质外延和异质外延的β-Ga 2 O 3的最佳生长条件;（ii）用于减少缺陷的界面策略;（iii）掺杂选择（例如，Si、Sn和Mg）用于高掺入效率和增强的导电性;（iv）用于改善结构和电学性质的退火程序;和（v）面内各向异性及其对电学和热学输运性质的影响。这项研究提供了一个基本的理解，在这种宽带隙材料的整体结构和电气性能的缺陷和掺杂剂的作用。

Non-Technical Description: In the past decade, wide-bandgap semiconductor materials such as GaN have enabled a variety of optoelectronic and electronic technologies by providing new capabilities at elevated temperatures and high voltages. This research project focuses on investigating the growth and fundamental properties of gallium oxide (Ga2O3), a material that has not been extensively explored for electronics. The knowledge gained in this study leads to high-quality gallium oxide materials with a low defect density and controllable electronic properties for high-power devices. The project topic increases public awareness of the importance of novel materials for energy-efficient power electronics, essential to our future quality of life. In addition, graduate and undergraduate students are trained in materials science research, with a special emphasis on involving underrepresented groups. The project also fosters interdisciplinary collaborations at local, national and international levels and transforms fundamental materials research findings to industry.Technical Description: The scientific objective of this project is to establish the relationship between the thin-film growth and the structural and physical properties of Ga2O3. The Ga2O3 thin films are deposited using three complimentary growth techniques including pulsed laser deposition, pulsed electron deposition and metalorganic vapor phase deposition with the ultimate goal to explore its potential for power electronics. The research explores: (i) the optimum growth conditions of beta-Ga2O3 through homoepitaxy and heteroepitaxy; (ii) interface strategies for defect reduction; (iii) doping options (e.g., Si, Sn and Mg) for high incorporation efficiency and enhanced conductivities; (iv) annealing procedures for improving the structural and electrical properties; and (v) in-plane anisotropy and its effects on electrical and thermal transport properties. The study provides a fundamental understanding of the roles of defects and dopants on the overall structural and electrical properties in this wide bandgap material.