US-Ireland R&D Partnership: Ga2O3: Understanding Growth, Interfaces and Defects to enable next generation Electronics (GUIDE)

美国-爱尔兰 R

• 批准号: 2154535
• 负责人: Chadwin Young
• 金额: $ 43.96万
• 依托单位: University of Texas at Dallas
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-08-15 至 2025-07-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2154535&HistoricalAwards=false
• 关键词: US; Ireland; R& Partnership; Ga2O3

Non-Technical AbstractThis NSF project aims to continue over a decade of partnerships with Northern Ireland and the Republic of Ireland is to investigate a relatively new semiconductor known as gallium oxide to transform power electronics for systems and applications that go far beyond current state of the art for these power transistors that can also function in extreme environments. This will be determined by evaluating how this semiconductor can be introduced into mainstream chip manufacturing while achieving gallium oxide’s expected performance. The intellectual merits of this project include evaluation of gallium oxide combined with insultating or magnetic materials to attempt to realize the promise if this relatively new semiconducting material for applications in power transistors and extreme environment memory. In addition, the proposed research will explore what is happening when these materials join together. The interface that forms between the materials is critical to achieving the theoretically predicted device performance since this interface is assumed to be ideal. Therefore, non-ideal interfaces can have adverse effects that impede eventual chip performance. Therefore, this tri-lateral research team will fundamentally investigate these materials and interfaces to determine performance, and should the expected performance not be met, provide an explanation for why devices are underperforming. Then, the team can either solve what is causing the performance degradation or provide predictive models that can project when the device degradation becomes sufficient enough to render the device as having failed. The implications of these findings from the project will enable a broad range of technological advances in clean energy, wireless communications, optoelectronics, power grids, and defense by enabling technologies inaccessible to current, mainstream power transistors. Furthermore, advancing the understanding how to properly bring these proposed materials together will help enable execution of a bipartisan plan through pending legislation to reenergize computer chip manufacturing here in the United States to ensure a global competitive advantage and further enhance national security. In addition, student engagement between the 3 locations is planned for scientific and cultural exchanges along with underrepresented groups, women, and first generation student engagement on pursuing graduate education and research careers.Technical AbstractThis proposed GUIDE program will continue a productive NSF US-Ireland partnership that has lasted more than a decade between UT-Dallas (UTD), the Tyndall National Institute (TNI), and Queen’s Univ. Belfast (QUB). The partnership will provide fundamental understanding in the deposition and characterization of dielectric and ferroelectric materials on gallium oxide (Ga2O3) for use in power transistors and memory applications. The goal of this proposal is the methodical exploration and fundamental understanding of interface and material properties that influence the behavior of Ga2O3-based electron devices. We will incorporate modeling and simulation to steer experimentation and to provide understanding and correlation between material and electronic properties. Incorporating high-k oxides increases the breakdown field strength of the transistor and improves channel region modulation in vertical transistors. In addition, having a ferroelectric material on Ga2O3 will enable extreme environment, non-volatile memory that can withstand high temperatures (wide bandgap) and radiation exposure (memory switching based on ferroelectricity rather dielectric charges). Furthermore, exploring low-temperature deposited Ga2O3 with high-k oxides will detail critical information for three-dimensional monolithic integration that may require backend-of-line, low temperature fabrication. Fundamental device understanding of the bulk dielectric and associated interface properties is critical to realizing power transistors with faster switching frequencies, better efficiency, and high temperature and electric field operation than current power transistors. Providing an approach to effectively evaluate electrically active defects within the device architecture will enable methodology development and forecast performance and reliability for those working in this field. Furthermore, advancing the understanding how to properly bring these proposed materials together will help enable execution of a bipartisan plan through pending legislation to reenergize computer chip manufacturing here in the United States to ensure a global competitive advantage and further enhance national security. In addition, student engagement between the 3 locations is planned for scientific and cultural exchanges along with underrepresented groups, women, and first-generation student engagement on pursuing graduate education and research careers.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术摘要这个NSF项目的目标是继续与北方爱尔兰和爱尔兰共和国的十多年的合作伙伴关系，研究一种相对较新的半导体，称为氧化镓，以改变电力电子系统和应用，远远超出这些功率晶体管，也可以在极端环境中工作的当前技术水平。这将通过评估如何将这种半导体引入主流芯片制造，同时实现氧化镓的预期性能来确定。该项目的智力价值包括评估氧化镓与绝缘或磁性材料的结合，以试图实现这种相对较新的半导体材料在功率晶体管和极端环境存储器中应用的前景。此外，拟议的研究将探索当这些材料结合在一起时会发生什么。材料之间形成的界面对于实现理论预测的器件性能至关重要，因为该界面被假定为理想的。因此，非理想的接口可能具有阻碍最终芯片性能的不利影响。因此，这个三方研究团队将从根本上研究这些材料和界面，以确定性能，如果不符合预期性能，则为器械性能不佳的原因提供解释。然后，该团队可以解决导致性能下降的原因，或者提供预测模型，该模型可以预测何时设备退化足以使设备出现故障。该项目的这些发现的影响将通过使当前主流功率晶体管无法实现的技术，在清洁能源，无线通信，光电子，电网和国防方面实现广泛的技术进步。此外，进一步了解如何正确地将这些拟议的材料结合在一起，将有助于通过悬而未决的立法执行两党计划，以重振美国的计算机芯片制造业，确保全球竞争优势，并进一步加强国家安全。此外，3个地点之间的学生参与计划进行科学和文化交流沿着与代表性不足的群体，妇女和第一代学生参与追求研究生教育和研究事业。技术摘要这一拟议的指南计划将继续一个富有成效的NSF美国-爱尔兰伙伴关系，已经持续了十多年之间的UT-达拉斯（UTD），廷德尔国家研究所（TNI），和贝尔法斯特女王大学（QUB）。该合作伙伴关系将提供在功率晶体管和存储器应用中使用的氧化镓（Ga 2 O3）上的电介质和铁电材料的沉积和表征的基本理解。该提案的目标是系统地探索和基本了解影响Ga 2 O 3基电子器件行为的界面和材料特性。我们将结合建模和仿真来指导实验，并提供材料和电子性能之间的理解和相关性。对高k氧化物进行热处理增加了晶体管的击穿场强并改善了垂直晶体管中的沟道区调制。此外，在Ga 2 O3上具有铁电材料将实现极端环境，非易失性存储器可以承受高温（宽带隙）和辐射暴露（基于铁电性而不是介电电荷的存储器切换）。此外，探索低温沉积的Ga 2 O3与高k氧化物将详细的三维单片集成，可能需要后端的线，低温制造的关键信息。对体介电和相关界面性质的基本器件理解对于实现具有比当前功率晶体管更快的开关频率、更好的效率以及高温和电场操作的功率晶体管至关重要。提供一种方法来有效地评估器件架构内的电活性缺陷，将使该领域的工作人员能够开发方法并预测性能和可靠性。此外，加深对如何正确整合这些拟议材料的理解将有助于通过悬而未决的立法执行两党计划，重振美国的计算机芯片制造业，以确保全球竞争优势并进一步增强国家安全。此外，三个地点之间的学生参与计划与代表性不足的群体，妇女和第一代学生参与追求研究生教育和研究事业的科学和文化交流沿着。该奖项反映了NSF的法定使命，并已被认为是值得通过使用基金会的智力价值和更广泛的影响审查标准进行评估的支持。