Emergent Phenomena at Flat Interfaces between Nitrides and Oxides

氮化物和氧化物之间平面界面处的突现现象

• 批准号: 1508191
• 负责人: Jon-Paul Maria
• 金额: $ 46.8万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-08-01 至 2019-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1508191&HistoricalAwards=false
• 关键词: Emergent; Phenomena; Flat; Interfaces; between

This project is supported by the Electronic and Photonic Materials Program and by the Ceramics Program, both in the Division of Materials Research.Nontechnical Description: The NCSU (North Carolina State University) research team of Maria and Sitar explores the junction of nitride and oxide semiconductors with specific attention to the interfaces that bond them. When correctly prepared, these interfaces can host a high concentration of high-speed electrons that are confined to a two-dimensional layer. This new type of material is designed to have controllable electron density at the interface and opens new possibilities for future electronic devices. The research project involves graduate undergraduate students. The team disseminates the research findings through various educational outreach activities. For example, the annual NCSU Science and Mathematics Interactive Learning Experience (SMILE) camp engages middle-school and advanced fifth grade students to explore the principles of materials science in the PIs' research labs.Technical Description: The Maria and Sitar research team explores semiconductor-grade heteroepitaxial interfaces between complex oxides (e.g., MgO-CaO) and GaN. The properties and performance of these heterostructures are regulated by the electronic structure of the constituent crystals as opposed to unwanted defects, structural imperfections, or undesired chemical interactions. Seamless integration across two classes of materials is expected to create pathways to intimately couple their properties. To accomplish these goals, the team combines two advanced materials synthesis methods: surfactant-assisted film growth and confined epitaxy. Surfactant assisted growth overcomes the challenges of oxide faceting, while confined epitaxy creates step-free surfaces and thus perfectly flat interfaces. Using these approaches, the team is positioned to superimpose high room-temperature carrier mobility in compound semiconductors with nonlinear property responses of electronic oxides. This unique oxide/nitride heterostructure provides access to a new frontier of electronic, magnetic, optical, and interface physics.

非技术性描述：NCSU（北卡罗来纳州州立大学）的Maria和Sitar研究小组探索了氮化物和氧化物半导体的结，特别关注了将它们结合在一起的界面。当正确准备时，这些界面可以容纳高浓度的高速电子，这些电子被限制在二维层中。这种新型材料被设计为在界面处具有可控的电子密度，为未来的电子设备开辟了新的可能性。这个研究项目涉及研究生和本科生。该小组通过各种教育推广活动传播研究结果。例如，一年一度的NCSU科学与数学互动学习体验（SMILE）营吸引中学和高五年级学生在PI研究实验室中探索材料科学原理。技术描述：Maria和Sitar研究团队探索半导体级复杂氧化物之间的异质外延界面（例如，MgO-CaO）和GaN。这些异质结构的性质和性能由组成晶体的电子结构调节，而不是不需要的缺陷，结构缺陷或不需要的化学相互作用。两类材料的无缝集成有望创造出将其特性紧密结合的途径。为了实现这些目标，该团队结合了两种先进的材料合成方法：表面辅助薄膜生长和限制外延。表面活性剂辅助生长克服了氧化物刻面的挑战，而受限外延产生无台阶表面，从而形成完美平坦的界面。使用这些方法，该团队将利用电子氧化物的非线性特性响应在化合物半导体中实现高室温载流子迁移率。这种独特的氧化物/氮化物异质结构提供了进入电子，磁性，光学和界面物理学的新前沿。