Materials World Network: Science of Polar Homo- and Heterointerfaces

材料世界网络:极性同质和异质界面科学

基本信息

  • 批准号:
    1108071
  • 负责人:
  • 金额:
    $ 60万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    2011
  • 资助国家:
    美国
  • 起止时间:
    2011-08-15 至 2016-04-30
  • 项目状态:
    已结题

项目摘要

A focused international research collaboration linking North Carolina State University, the Technical University Berlin (TUB) and the Leibniz-Institut für Kristallzüchtung (IKZ) in Berlin, Germany, explores the fundamental science of epitaxial interfaces that define a discontinuity in electrical polarization in nitride-nitride and nitride-oxide systems. The aim is to understand the structural, chemical, and electronic features that regulate the interfacial electronic properties. The effort is based on a hypothesis that vertical and lateral heteropolar interfaces that approach 'semiconductor-grade' quality can be prepared, and that their study will lead to exciting opportunities for fundamental advances in interface physics and optic/electronic functionality. Each member of the international team brings a unique and leading edge technical capability that collectively enables this research. The Sitar group (NC State) brings a metalorganic chemical vapor deposition technology that can control polarity in thin films of nitride semiconductors both laterally and vertically; the Maria group (NC State) developed a surfactant-assisted molecular beam epitaxy technique that can for the first time prepare cubic oxides on GaN surfaces with a 2-D growth mode and dramatically reduced defect concentrations; the Hoffmann group (TUB) brings in optical characterization of polar materials and heterostructures; and the Albrecht group (IKZ) brings aberration-corrected transmission electron microscopy characterization with sub-Å spatial resolution and sub-eV energy resolution. The research refines synthesis techniques that enable hybrid thin film structures that seamlessly merge oxides and nitrides with heretofore unachievable material quality. By combining synthesis and characterization the investigators are able to identify and understand the structural and chemical features that enable, interfere, or enhance heteropolar interface coupling.Achieving an understanding of heteropolar interface-property relationships will propel research in hybrid systems that lead to new physics, new functionality, an expanded set of low dimension optoelectronic devices, and a pathway to smart structures that utilize in a new way the non-linear dielectric response of ferroelectrics. Through this collaboration, students and faculty from NCSU, TUB, and IKZ have access to mentoring expertise and world-class laboratory facilities in technical areas that are absent from the home institutions. U.S. and German students participate in a 6-month graduate sabbatical in program year three to ensure substantive international experience. During their first two years, U.S. students are encouraged take two semesters of German to acquire basic communication skills. The work of the German participants is supported by the German Research Foundation (DFG).
北卡罗莱纳州立大学、柏林工业大学(TUB)和德国柏林莱布尼茨研究所(Leibniz-Institut f<e:1> r kristallzchtung, IKZ)之间的一项重点国际研究合作,探索了外延界面的基础科学,该界面定义了氮化氮化和氮化氧化物系统中电极化的不连续。目的是了解调节界面电子特性的结构、化学和电子特征。这项工作是基于一个假设,即垂直和横向的异极界面可以制备出接近“半导体级”质量的界面,他们的研究将为界面物理和光学/电子功能的基础进步带来令人兴奋的机会。国际团队的每个成员都带来了独特的前沿技术能力,共同使这项研究成为可能。锡塔尔集团(NC State)带来了一种金属有机化学气相沉积技术,可以在横向和纵向上控制氮化半导体薄膜的极性;Maria小组(NC State)开发了一种表面活性剂辅助分子束外延技术,首次可以在GaN表面上以二维生长模式制备立方氧化物,并显著降低缺陷浓度;Hoffmann组(TUB)带来了极性材料和异质结构的光学表征;Albrecht小组(IKZ)带来了亚-Å空间分辨率和亚ev能量分辨率的像差校正透射电子显微镜表征。该研究改进了合成技术,使混合薄膜结构能够无缝地融合氧化物和氮化物,并且具有迄今为止无法实现的材料质量。通过将合成和表征相结合,研究人员能够识别和理解能够实现、干扰或增强异极界面耦合的结构和化学特征。实现对异极性界面性质关系的理解将推动混合系统的研究,从而导致新的物理,新的功能,一组扩展的低维光电器件,以及以新的方式利用铁电体的非线性介电响应的智能结构的途径。通过这种合作,来自NCSU, TUB和IKZ的学生和教师可以在技术领域获得指导专家和世界一流的实验室设施,这是国内机构所缺乏的。美国和德国学生在项目第三年参加为期6个月的研究生休假,以确保丰富的国际经验。在他们的头两年,美国学生被鼓励用两个学期的德语来获得基本的沟通技巧。德国参与者的工作得到德国研究基金会(DFG)的支持。

项目成果

期刊论文数量(0)
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会议论文数量(0)
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Jon-Paul Maria其他文献

Alternative dielectrics to silicon dioxide for memory and logic devices
用于存储和逻辑器件的二氧化硅的替代电介质
  • DOI:
    10.1038/35023243
  • 发表时间:
    2000-08-31
  • 期刊:
  • 影响因子:
    48.500
  • 作者:
    Angus I. Kingon;Jon-Paul Maria;S. K. Streiffer
  • 通讯作者:
    S. K. Streiffer
Hydroflux-assisted densification: applying flux crystal growth techniques to cold sintering
  • DOI:
    10.1007/s10853-020-04926-7
  • 发表时间:
    2020-06-17
  • 期刊:
  • 影响因子:
    3.900
  • 作者:
    Sarah Lowum;Richard Floyd;Jon-Paul Maria
  • 通讯作者:
    Jon-Paul Maria
Processing-dependent chemical ordering in Cusub3/subAu characterized via non-destructive Bragg coherent diffraction imaging
通过无损布拉格相干衍射成像对 Cusub3/subAu 中与处理相关的化学有序性的表征
  • DOI:
    10.1016/j.scriptamat.2025.116820
  • 发表时间:
    2025-10-01
  • 期刊:
  • 影响因子:
    5.600
  • 作者:
    Nathaniel Warren;Chloe Skidmore;Katherine J. Harmon;Wonsuk Cha;Jon-Paul Maria;Stephan O. Hruszkewycz;Darren C. Pagan
  • 通讯作者:
    Darren C. Pagan
Phase-field study of precipitate morphology in epitaxial high-entropy oxide films
外延高熵氧化物薄膜中析出物形态的相场研究
  • DOI:
    10.1016/j.actamat.2025.120721
  • 发表时间:
    2025-03-01
  • 期刊:
  • 影响因子:
    9.300
  • 作者:
    Yueze Tan;Jacob T. Sivak;Saeed S.I. Almishal;Jon-Paul Maria;Susan B. Sinnott;Yanzhou Ji;Long-Qing Chen
  • 通讯作者:
    Long-Qing Chen
Alternative dielectrics to silicon dioxide for memory and logic devices
用于存储和逻辑器件的二氧化硅的替代电介质
  • DOI:
    10.1038/35023243
  • 发表时间:
    2000-08-31
  • 期刊:
  • 影响因子:
    48.500
  • 作者:
    Angus I. Kingon;Jon-Paul Maria;S. K. Streiffer
  • 通讯作者:
    S. K. Streiffer

Jon-Paul Maria的其他文献

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{{ truncateString('Jon-Paul Maria', 18)}}的其他基金

Exotic Quantum Responses in Complex Oxide Thin Films
复合氧化物薄膜中的奇异量子响应
  • 批准号:
    1905861
  • 财政年份:
    2019
  • 资助金额:
    $ 60万
  • 项目类别:
    Continuing Grant
Entropy stabilized complex oxides
熵稳定的复合氧化物
  • 批准号:
    1839087
  • 财政年份:
    2018
  • 资助金额:
    $ 60万
  • 项目类别:
    Standard Grant
Entropy stabilized complex oxides
熵稳定的复合氧化物
  • 批准号:
    1610844
  • 财政年份:
    2016
  • 资助金额:
    $ 60万
  • 项目类别:
    Standard Grant
DMREF: Collaborative Research: Materials design of correlated metals as novel transparent conductors
DMREF:协作研究:相关金属作为新型透明导体的材料设计
  • 批准号:
    1629477
  • 财政年份:
    2016
  • 资助金额:
    $ 60万
  • 项目类别:
    Standard Grant
Emergent Phenomena at Flat Interfaces between Nitrides and Oxides
氮化物和氧化物之间平面界面处的突现现象
  • 批准号:
    1508191
  • 财政年份:
    2015
  • 资助金额:
    $ 60万
  • 项目类别:
    Continuing Grant
MRI: Acquisition of an extreme-resolution low-voltage scanning electron microscope
MRI:购买高分辨率低压扫描电子显微镜
  • 批准号:
    1337694
  • 财政年份:
    2013
  • 资助金额:
    $ 60万
  • 项目类别:
    Standard Grant
Student and Young Faculty Travel to the 2007 International Conference on Electroceramics; Arusha, Tanzania
学生和青年教师前往参加 2007 年国际电陶瓷会议;
  • 批准号:
    0733159
  • 财政年份:
    2007
  • 资助金额:
    $ 60万
  • 项目类别:
    Standard Grant
CAREER: Structure Property Relationships in BiFeO3: A Defect Chemistry Approach
职业:BiFeO3 中的结构性质关系:缺陷化学方法
  • 批准号:
    0547134
  • 财政年份:
    2006
  • 资助金额:
    $ 60万
  • 项目类别:
    Continuing Grant
MRI: Acquisition of Major Instrumentation: Deep Reactive Ion Etching
MRI:购置主要仪器:深度反应离子蚀刻
  • 批准号:
    0421088
  • 财政年份:
    2004
  • 资助金额:
    $ 60万
  • 项目类别:
    Standard Grant

相似国自然基金

国际心脏研究会第二十三届世界大会(XXIII World Congress ISHR)
  • 批准号:
    81942001
  • 批准年份:
    2019
  • 资助金额:
    10 万元
  • 项目类别:
    专项基金项目

相似海外基金

Materials World Network: Collaborative Proposal: Understanding the Optical Response of Designer Epsilon Near Zero Materials
材料世界网络:协作提案:了解设计师 Epsilon 近零材料的光学响应
  • 批准号:
    1711849
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    2016
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    $ 60万
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Materials World Network, SusChEM: Hybrid Sol-Gel Route to Chromate-free Anticorrosive Coatings
材料世界网络,SusChEM:混合溶胶-凝胶路线制备无铬酸盐防腐涂料
  • 批准号:
    1313544
  • 财政年份:
    2014
  • 资助金额:
    $ 60万
  • 项目类别:
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Materials World Network: Development of high-efficiency photovoltaic devices for optimal performance under a broad range of spectral illumination conditions
材料世界网络:开发高效光伏器件,在广泛的光谱照明条件下实现最佳性能
  • 批准号:
    239013293
  • 财政年份:
    2013
  • 资助金额:
    $ 60万
  • 项目类别:
    Research Grants
Materials World Network: Electron-lattice dynamics at an atomically controlled buried interface
材料世界网络:原子控制掩埋界面的电子晶格动力学
  • 批准号:
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    2013
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    $ 60万
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Materials World Network, SusChEM: Collaborative Electron-lattice Dynamics at an Atomically Controlled Buried Interface
材料世界网络,SusChEM:原子控制掩埋界面的协同电子晶格动力学
  • 批准号:
    1311849
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Materials World Network: Crackling Noise
材料世界网:噼啪声
  • 批准号:
    1312160
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    $ 60万
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Materials World Network: Investigations of Quantum Fluctuation Relations Using Superconducting Qubits
材料世界网络:利用超导量子位研究量子涨落关系
  • 批准号:
    1312421
  • 财政年份:
    2013
  • 资助金额:
    $ 60万
  • 项目类别:
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Materials World Network, SusChEM: Control of Interfacial Chemistry in Reactive Nanolaminates (CIREN)
材料世界网络,SusChEM:反应性纳米层压材料中界面化学的控制(CIREN)
  • 批准号:
    1312525
  • 财政年份:
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    $ 60万
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Materials World Network: Particle-Mediated Control Over Crystallization: From the Pre-Nucleation Stage to the Final Crystal
材料世界网络:粒子介导的结晶控制:从预成核阶段到最终晶体
  • 批准号:
    1312697
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    2013
  • 资助金额:
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Materials World Network: New Functionality in Complex Magnetic Structures with Perpendicular Anisotropy
材料世界网络:具有垂直各向异性的复杂磁结构的新功能
  • 批准号:
    1312750
  • 财政年份:
    2013
  • 资助金额:
    $ 60万
  • 项目类别:
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