EFRI 2-DARE: Valley Optoelectronics with Atomically Thin Transition Metal Dichalcogenides

EFRI 2-DARE：Valley Opto electronics 具有原子薄过渡金属二硫化物

• 批准号: 1542741
• 负责人: Feng Wang
• 金额: $ 200万
• 依托单位: University of California-Berkeley
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-09-01 至 2019-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1542741&HistoricalAwards=false
• 关键词: EFRI; DARE; Valley; Optoelectronics; Atomically

Nontechnical Description: This project is aimed at exploiting the novel electronic and optical properties of two-dimensional (2D) materials through the use of a unique set of devices built at the nanometer scale. The main strategy is to implement new techniques to control the quantum mechanical behavior of electrons in 2D materials by tuning how they interact with photons of light as well as with precise electrical signals. The optoelectronic devices explored in this project have the potential to improve high-speed data communications and low-power electronics in a transformative way. This project provides an ideal framework for multidisciplinary education, where physics and engineering students in different research areas can interact closely with each other. The project also partners with existing programs at Berkeley (such as the Berkeley Edge program) that are aimed at enhancing the recruitment and training of underrepresented and woman students engaged the frontier research in science and engineering. Technical Description: This EFRI 2-DARE project aims to develop novel valleytronic and optoelectronic devices based on atomically thin transition metal dichalcogenide (MX2) crystals. Owing to their reduced dimensionality and high spin-orbital coupling, two-dimensional MX2 crystals (where M is a transition metal and X is a chalcogen) exhibit unusual quantum phenomena, including unique exciton physics and emergent valley degrees of freedom. An outstanding scientific question concerns the interplay between photons, excitons, and charge carriers with different valley and spin states in 2D MX2 crystals. This project aims at obtaining fundamental understanding of such interplay, and at developing novel valleytronic and optoelectronic devices based on these new insights. These goals will be achieved through an interdisciplinary and highly integrated approach that combines expertise in materials synthesis, spectroscopic characterization, device engineering, and theoretical modeling.

非技术描述：该项目旨在通过使用一套独特的纳米级设备来开发二维 (2D) 材料的新颖电子和光学特性。主要策略是实施新技术，通过调整电子与光光子以及精确电信号的相互作用来控制二维材料中电子的量子力学行为。该项目探索的光电器件有潜力以变革性的方式改善高速数据通信和低功耗电子产品。该项目为多学科教育提供了一个理想的框架，不同研究领域的物理和工程学生可以相互密切互动。该项目还与伯克利分校的现有项目（例如 Berkeley Edge 项目）合作，旨在加强对参与科学和工程前沿研究的代表性不足的女学生的招募和培训。技术描述：该 EFRI 2-DARE 项目旨在开发基于原子薄过渡金属二硫属化物 (MX2) 晶体的新型谷电子和光电器件。由于维数降低和自旋轨道耦合高，二维 MX2 晶体（其中 M 是过渡金属，X 是硫族元素）表现出不寻常的量子现象，包括独特的激子物理和涌现谷自由度。一个突出的科学问题涉及 2D MX2 晶体中具有不同谷态和自旋态的光子、激子和载流子之间的相互作用。该项目旨在获得对这种相互作用的基本了解，并根据这些新见解开发新型谷电子和光电器件。这些目标将通过跨学科和高度集成的方法来实现，该方法结合了材料合成、光谱表征、器件工程和理论建模方面的专业知识。