EFRI 2-DARE: Valley Optoelectronics with Atomically Thin Transition Metal Dichalcogenides

非技术描述：该项目旨在通过使用一套独特的纳米级设备来开发二维(2D)材料的新型电子和光学特性。主要的战略是实施新的技术来控制2D材料中电子的量子力学行为，方法是调整电子与光的光子以及与精确的电信号的相互作用。该项目中探索的光电子器件有可能以一种变革性的方式改进高速数据通信和低功率电子设备。该项目为多学科教育提供了一个理想的框架，不同研究领域的物理和工程专业的学生可以密切互动。该项目还与伯克利现有的计划(如伯克利边缘计划)合作，这些计划旨在加强对从事科学和工程前沿研究的代表性不足和女性学生的招聘和培训。技术描述：该EFRI 2-DARE项目旨在开发基于原子薄过渡金属二卤化物(MX2)晶体的新型电子和光电子器件。二维MX2晶体(M是过渡金属，X是硫族)由于其降维和高度的自旋-轨道耦合，表现出不寻常的量子现象，包括独特的激子物理和出现的谷自由度。二维MX2晶体中具有不同谷态和自旋态的光子、激子和载流子之间的相互作用是一个悬而未决的科学问题。该项目旨在获得对这种相互作用的基本了解，并在这些新见解的基础上开发新型的电子和光电设备。这些目标将通过一种跨学科和高度集成的方法来实现，该方法结合了材料合成、光谱表征、设备工程和理论建模方面的专业知识。

Nontechnical Description: This project is aimed at exploiting the novel electronic and optical properties of two-dimensional (2D) materials through the use of a unique set of devices built at the nanometer scale. The main strategy is to implement new techniques to control the quantum mechanical behavior of electrons in 2D materials by tuning how they interact with photons of light as well as with precise electrical signals. The optoelectronic devices explored in this project have the potential to improve high-speed data communications and low-power electronics in a transformative way. This project provides an ideal framework for multidisciplinary education, where physics and engineering students in different research areas can interact closely with each other. The project also partners with existing programs at Berkeley (such as the Berkeley Edge program) that are aimed at enhancing the recruitment and training of underrepresented and woman students engaged the frontier research in science and engineering. Technical Description: This EFRI 2-DARE project aims to develop novel valleytronic and optoelectronic devices based on atomically thin transition metal dichalcogenide (MX2) crystals. Owing to their reduced dimensionality and high spin-orbital coupling, two-dimensional MX2 crystals (where M is a transition metal and X is a chalcogen) exhibit unusual quantum phenomena, including unique exciton physics and emergent valley degrees of freedom. An outstanding scientific question concerns the interplay between photons, excitons, and charge carriers with different valley and spin states in 2D MX2 crystals. This project aims at obtaining fundamental understanding of such interplay, and at developing novel valleytronic and optoelectronic devices based on these new insights. These goals will be achieved through an interdisciplinary and highly integrated approach that combines expertise in materials synthesis, spectroscopic characterization, device engineering, and theoretical modeling.