EFRI 2-DARE: Few-layer and Thin-film Black Phosphorus for Photonic Applications

EFRI 2-DARE：用于光子应用的少层薄膜黑磷

• 批准号: 1542815
• 负责人: Fengnian Xia
• 金额: $ 200万
• 依托单位: Yale University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-08-01 至 2020-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1542815&HistoricalAwards=false
• 关键词: EFRI; DARE; Few; layer; Thin

Photonic technologies have become ubiquitous in our modern society: infrared photodetectors and modulators enable optical communications and the internet, compact cameras in mobile devices make the instantaneous recording of precious moments possible, and solar cells provide environmentally-friendly electricity. Traditional photonics technologies often use a specific material to cover a particular wavelength range, with integration of multiple types 0f photonic materials to cover a broader range highly challenging. This EFRI team will investigate fundamental optical sciences and explore practical photonic applications of a novel two-dimensional (2D) material, black phosphorus (BP), which can cover a broad wavelength range from visible to mid-infrared and can be easily integrated with other photonic platforms due to its layered structure. The team will develop approaches for large-scale black phosphorus synthesis, material characterization, and BP device realization and testing, thus establishing the foundation for black phosphorus based photonic technologies. This project will transform many technological areas relying on optical imaging, sensing and communications, contributing to the National Photonics Initiative (NPI). The team consists of five investigators from four universities (Yale University, Massachusetts Institute of Technology, University of Southern California, and Washington University in St. Louis) and covers multiple disciplines including material sciences, physics, and engineering. This EFRI program will also provide students at different levels, especially those from underrepresented groups, and postdocs with multidisciplinary research experience fostered by the EFRI team, as well as through interactions with the industrial and international partners. This project will leverage recently rediscovered 2D layered black phosphorus to develop novel photonic devices for optical communications and infrared imaging, while exploring its integration with other 2D (e.g. graphene) and bulk (e.g. silicon) materials. In particular, the team will utilize BP?s widely tunable bandgap with layer number and its robust, anisotropic excitons to explore new optical sciences and to transform present photonic technologies. Establishing the theory, synthesis, encapsulation, and characterization approaches of few-layer and thin-film BP, as well as the fabrication and benchmarking of BP photonic device performance will build the foundation of this paradigm shift in photonic devices. Scientifically, exploration of anisotropic excitons and their tunability by electric field in few-layer BP will advance our basic understanding of many body physics in materials with low crystalline symmetry. Technologically, high carrier mobility, direct bandgap and strong light-BP interaction will enable the realization of a number of high performance BP photonics devices especially in strategically critical near- and mid-infrared wavelength range.

光子技术在我们的现代社会中已经变得无处不在：红外光电探测器和调制器使光通信和互联网成为可能，移动设备中的紧凑型相机使瞬间记录宝贵的时刻成为可能，太阳能电池提供环保电力。传统的光子学技术通常使用一种特定的材料来覆盖特定的波长范围，而集成多种类型的光子材料来覆盖更广泛的范围具有极大的挑战性。该EFRI团队将研究基础光学科学，并探索新型二维(2D)材料-黑磷(BP)的实际光子应用，这种材料可以覆盖从可见光到中红外的广泛波长范围，并且由于其分层结构，可以很容易地与其他光子平台集成。该团队将开发大规模黑磷合成、材料表征以及BP器件实现和测试的方法，从而为基于黑磷的光子技术奠定基础。该项目将改变许多依靠光学成像、传感和通信的技术领域，为国家光子学倡议(NPI)做出贡献。该团队由来自四所大学(耶鲁大学、麻省理工学院、南加州大学和圣路易斯华盛顿大学)的五名研究人员组成，涵盖材料科学、物理和工程学等多个学科。该EFRI项目还将为不同层次的学生，特别是那些来自代表性不足的群体的学生，以及博士后提供EFRI团队培养的多学科研究经验，以及通过与行业和国际合作伙伴的互动。该项目将利用最近重新发现的2D层状黑磷来开发用于光通信和红外成像的新型光子器件，同时探索其与其他2D(例如石墨烯)和块体(例如硅)材料的集成。特别是，该团队将利用BP？S广泛可调的带隙和层数及其强大的各向异性激子来探索新的光学科学和改变现有的光子技术。建立少层和薄膜BP的理论、合成、封装和表征方法，以及BP光子器件性能的制备和基准测试，将为光子器件的这种范式转变奠定基础。科学地探索各向异性激子及其电场在少层BP中的可调性，将促进我们对低晶体对称性材料中的多体物理的基本理解。在技术上，高载流子迁移率、直接带隙和强光-BP相互作用将使许多高性能的BP光电子器件得以实现，特别是在战略关键的近红外和中红外波长范围。