SBIR Phase I: Thin crystalline technologies for advanced power transistors

SBIR 第一阶段：先进功率晶体管的薄晶技术

• 批准号: 1549353
• 负责人: leo mathew
• 金额: $ 15万
• 依托单位: applied novel devices
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2016
• 资助国家: 美国
• 起止时间: 2016-01-01 至 2016-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1549353&HistoricalAwards=false
• 关键词: SBIR; Phase; Thin; crystalline; technologies

The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase I project is to enable smaller chargers, power factor convertors and switches in applications ranging from small applications such as implanted pace-makers, mobile-phones, computer to large applications such as automobile, machinery to very large applications such as ships, locomotives, traditional and renewable energy power plants. While the impact of the power switching product to be developed using this technology in this phase II project is broad, the use of this thin crystalline technology can have even broader impact across all modern semiconductor devices such as LED, PV, flexible CMOS and passive devices. The project will potentially enable thin form-factor packages in this broad range of power electronics applications.This Small Business Innovation Research (SBIR) Phase I project addresses challenges to further scaling of power MOSFETs which are one of the key building blocks of the electronic revolution we have witnessed over the last few decades. While the feature size of transistors has been constantly shrinking, the substrate thickness has been increasing. These substrates are currently mechanically thinned to minimize the negative impact of this increased thickness on performance and form-factor. There are significant challenges to continue this trend and the thin crystalline technology and device architecture proposed here can enable continued scaling of device metrics over the next decade with favorable cost structures. This effort will focus on the following specific technical challenges to bring it to market. (1) Develop power MOSFETs with improved switching characteristics using the thin crystalline technology (2) Develop the process technology on large area wafers used in current production lines (3) Develop the low-form factor package using the metallization features of thin-crystalline exfoliated technology (4) Characterize the device for performance and insertion into high volume de-risk (5) Develop a roadmap for a family of products that is sustainable over a decade to justify significant manufacturing investment to bring this technology to market.

这个小型企业创新研究（SBIR）第一阶段项目的更广泛的影响/商业潜力是使更小的充电器，功率因数转换器和开关的应用范围从小型应用，如植入式起搏器，移动电话，计算机到大型应用，如汽车，机械到非常大的应用，如船舶，机车，传统和可再生能源发电厂。虽然在第二阶段项目中使用该技术开发的电源开关产品的影响广泛，但使用这种薄晶体技术可以对所有现代半导体器件（如LED、PV、柔性CMOS和无源器件）产生更广泛的影响。 该项目将有可能在广泛的电力电子应用中实现薄型封装。这一小型企业创新研究（SBIR）第一阶段项目旨在解决功率MOSFET进一步扩展的挑战，功率MOSFET是我们在过去几十年见证的电子革命的关键组成部分之一。虽然晶体管的特征尺寸一直在不断缩小，但衬底厚度一直在增加。这些基板目前被机械地减薄以最小化这种增加的厚度对性能和形状因数的负面影响。继续这一趋势存在重大挑战，本文提出的薄晶体技术和器件架构可以在未来十年内以有利的成本结构实现器件指标的持续扩展。 这项工作将侧重于以下具体的技术挑战，以将其推向市场。(1)利用薄晶体技术开发具有改进开关特性的功率MOSFET（2）开发当前生产线中使用的大面积晶圆的工艺技术（3）利用薄晶体剥离技术的金属化特性开发低外形封装（4）表征器件的性能并插入高容量去风险环境（5）为一系列可持续十年的产品制定路线图，以证明将该技术推向市场的重大制造投资是合理的。