SBIR Phase I: Thin crystalline technologies for advanced power transistors
SBIR Phase I: Thin crystalline technologies for advanced power transistors
批准号:
1549353
负责人:
leo mathew
金额:
$15.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2016
资助国家:
美国
项目状态:
已结题
起止时间:
2016-01-01 至 2016-06-30
中文摘要
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英文摘要
The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase I project is to enable smaller chargers, power factor convertors and switches in applications ranging from small applications such as implanted pace-makers, mobile-phones, computer to large applications such as automobile, machinery to very large applications such as ships, locomotives, traditional and renewable energy power plants. While the impact of the power switching product to be developed using this technology in this phase II project is broad, the use of this thin crystalline technology can have even broader impact across all modern semiconductor devices such as LED, PV, flexible CMOS and passive devices. The project will potentially enable thin form-factor packages in this broad range of power electronics applications.This Small Business Innovation Research (SBIR) Phase I project addresses challenges to further scaling of power MOSFETs which are one of the key building blocks of the electronic revolution we have witnessed over the last few decades. While the feature size of transistors has been constantly shrinking, the substrate thickness has been increasing. These substrates are currently mechanically thinned to minimize the negative impact of this increased thickness on performance and form-factor. There are significant challenges to continue this trend and the thin crystalline technology and device architecture proposed here can enable continued scaling of device metrics over the next decade with favorable cost structures. This effort will focus on the following specific technical challenges to bring it to market. (1) Develop power MOSFETs with improved switching characteristics using the thin crystalline technology (2) Develop the process technology on large area wafers used in current production lines (3) Develop the low-form factor package using the metallization features of thin-crystalline exfoliated technology (4) Characterize the device for performance and insertion into high volume de-risk (5) Develop a roadmap for a family of products that is sustainable over a decade to justify significant manufacturing investment to bring this technology to market.
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SBIR Phase II: Thin crystalline technologies for advanced power transistors
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批准号:1660078
-
项目类别:Standard Grant
-
资助金额:$75.0万
-
财政年份:2017
-
负责人:leo mathew
-
依托单位:
SBIR Phase I: A Novel CMOS Device Architecture and Tools for beyond 14 nm Transistors
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批准号:1346096
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项目类别:Standard Grant
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资助金额:$15.0万
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财政年份:2014
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负责人:leo mathew
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依托单位:
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