Residual stress in nitride thin films: integrated experiments and development of a predictive model
氮化物薄膜中的残余应力:综合实验和预测模型的开发
基本信息
- 批准号:1602491
- 负责人:
- 金额:$ 58.71万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2016
- 资助国家:美国
- 起止时间:2016-07-01 至 2021-06-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
NON-TECHNICAL DESCRIPTION: Nitride thin films are used in a wide variety of applications. An example is the hard coating that is put on a tool bit to extend its lifetime. Such coatings are made by depositing atoms on the tool's surface from a vapor, referred to as physical vapor deposition. The resulting films often have large stress because the process of deposition does not allow the atoms time to get into their ideal positions. Consequently, this stress can lead to failure of the film either by cracking or delaminating. The goal of this research is to reduce the stress through understanding how the stress is related to the underlying physical processes. Through the use of a mathematical model of the processes affecting stress, it is possible to predict it for different processing conditions. TECHNICAL DETAILS: The focus of this work is to understand and control the stress in transition metal nitride thin films. Stress can be strongly affected by the processing conditions such as the energy of the deposited species or rate of film growth, but there is not a fundamental understanding of how stress reduction occurs. In this project, measurements of the stress are made during the nitride deposition using a real-time technique (based on the curvature induced in the wafer substrate). These measurements enable the stress to be quantitatively related to the processing parameters such as the growth rate and gas pressure. After growth, the film's microstructure is characterized by making a cross-section with a focused ion beam and measuring the grain structure with electron microscopy. This characterization enables the dependence of the stress on the film's grain size and microstructural evolution to be determined. The experimental results are used to refine and validate a model that relates the stress to the underlying processes in the film. This new model incorporates the kinetics of the deposited atoms and the defects that have not been included in previous models. This approach enables a deeper understanding of the origins of stress that can be used by thin film growers to predict the stress under various conditions for different materials systems. The model is made available to interested users on the researcher's website. A short course for industrial and academic professionals describes the mechanisms that control stress evolution. Students (at both the undergraduate and graduate level) participate in this research to develop skills in state-of-the-art experimental and modeling techniques. Students from underrepresented groups are recruited to participate in this research and promote their ability to develop careers in science and engineering.
非技术描述:氮化物薄膜用于各种各样的应用。一个例子是硬涂层,是把一个工具位,以延长其使用寿命。这种涂层是通过从蒸汽中将原子沉积在工具表面上制成的,称为物理气相沉积。由于沉积过程不允许原子有时间进入其理想位置,因此所得薄膜通常具有大的应力。因此,该应力可导致膜破裂或分层而失效。本研究的目的是通过了解压力如何与潜在的物理过程相关来减少压力。通过使用影响应力的过程的数学模型,可以预测不同加工条件下的应力。 技术要求:这项工作的重点是理解和控制过渡金属氮化物薄膜中的应力。应力可以强烈地受到处理条件的影响,例如沉积物质的能量或膜生长的速率,但是对于应力降低如何发生还没有基本的理解。在这个项目中,在氮化物沉积过程中使用实时技术(基于晶片衬底中引起的曲率)进行应力测量。这些测量使得应力能够定量地与诸如生长速率和气体压力的处理参数相关。在生长之后,通过用聚焦离子束制作横截面并用电子显微镜测量晶粒结构来表征膜的微观结构。 这种表征使得能够确定应力对膜的晶粒尺寸和微观结构演变的依赖性。实验结果被用来完善和验证一个模型,该模型涉及的应力在膜中的底层过程。这个新模型结合了沉积原子的动力学和以前模型中未包含的缺陷。这种方法能够更深入地了解应力的来源,薄膜生长者可以使用这种方法来预测不同材料系统在各种条件下的应力。该模型在研究人员的网站上提供给感兴趣的用户。工业和学术专业人士的短期课程描述了控制压力演变的机制。 学生(本科生和研究生)参加这项研究,以发展最先进的实验和建模技术的技能。 来自代表性不足群体的学生被招募参加这项研究,并促进他们在科学和工程领域发展职业的能力。
项目成果
期刊论文数量(8)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
A unified kinetic model for stress relaxation and recovery during and after growth interruptions in polycrystalline thin films
多晶薄膜生长中断期间和之后应力松弛和恢复的统一动力学模型
- DOI:10.1016/j.actamat.2020.04.013
- 发表时间:2020
- 期刊:
- 影响因子:9.4
- 作者:Jagtap, Piyush;Chason, Eric
- 通讯作者:Chason, Eric
Effect of grain size on thin film stress and morphology using kinetic Monte Carlo simulations
使用动力学蒙特卡罗模拟晶粒尺寸对薄膜应力和形态的影响
- DOI:10.1063/5.0023081
- 发表时间:2020
- 期刊:
- 影响因子:3.2
- 作者:Chason, Eric;Jagtap, Piyush
- 通讯作者:Jagtap, Piyush
Inter-relationship of stress and microstructure in BCC and ‘beta’ tungsten films
BCC 和 β 钨薄膜中应力与微观结构的相互关系
- DOI:10.1016/j.surfcoat.2023.129336
- 发表时间:2023
- 期刊:
- 影响因子:5.4
- 作者:Johnson, Jonathan A.;Su, Tong;Chason, Eric;Thompson, Gregory B.
- 通讯作者:Thompson, Gregory B.
Effect of processing conditions on residual stress in sputtered transition metal nitrides (TiN, ZrN and TaN): Experiments and modeling
加工条件对溅射过渡金属氮化物(TiN、ZrN 和 TaN)残余应力的影响:实验和建模
- DOI:10.1016/j.surfcoat.2022.128880
- 发表时间:2022
- 期刊:
- 影响因子:5.4
- 作者:Rao, Zhaoxia;Su, Tong;Koenig, Thomas;Thompson, Gregory B.;Depla, Diederik;Chason, Eric
- 通讯作者:Chason, Eric
The microstructural and stress evolution in sputter deposited Ni thin films
- DOI:10.1016/j.surfcoat.2021.126973
- 发表时间:2021-02
- 期刊:
- 影响因子:5.4
- 作者:T. Koenig;Z. Rao;E. Chason;G. Tucker;G. Thompson
- 通讯作者:T. Koenig;Z. Rao;E. Chason;G. Tucker;G. Thompson
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Eric Chason其他文献
Separating Nucleation from Growth Kinetics of Sn Whiskers using Thermal Pretreatment Followed by Mechanical Loading
- DOI:
10.1007/s11664-024-11522-x - 发表时间:
2024-10-26 - 期刊:
- 影响因子:2.500
- 作者:
Nupur Jain;Piyush Jagtap;Allan Bower;Eric Chason - 通讯作者:
Eric Chason
Computational tool for analyzing stress in thin films
用于分析薄膜应力的计算工具
- DOI:
- 发表时间:
2023 - 期刊:
- 影响因子:5.4
- 作者:
Eric Chason;Tong Su;Z. Rao - 通讯作者:
Z. Rao
Morphology of ion sputtered Cu(0 0 1) surface: Transition from unidirectional roughening to bidirectional roughening
- DOI:
10.1016/j.nimb.2005.08.026 - 发表时间:
2006-01-01 - 期刊:
- 影响因子:
- 作者:
Wai Lun Chan;Eric Chason - 通讯作者:
Eric Chason
Kinetic mechanisms in ion-induced ripple formation on Cu(0 0 1) surfaces
- DOI:
10.1016/j.nimb.2005.08.027 - 发表时间:
2006-01-01 - 期刊:
- 影响因子:
- 作者:
Eric Chason;Wai Lun Chan - 通讯作者:
Wai Lun Chan
Investigation of Tin (Sn) Film Using an Aerosol Jet Additive Manufacturing Deposition Process
- DOI:
10.1007/s11664-017-5524-7 - 发表时间:
2017-04-26 - 期刊:
- 影响因子:2.500
- 作者:
Aleksandra Fortier;Yue Liu;Iman Ghamarian; Peter C. Collins;Eric Chason - 通讯作者:
Eric Chason
Eric Chason的其他文献
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{{ truncateString('Eric Chason', 18)}}的其他基金
Fundamental Understanding of Residual Stress in Binary and Ternary Nitride Thin Films: Measurements and Modeling
对二元和三元氮化物薄膜中残余应力的基本理解:测量和建模
- 批准号:
2006422 - 财政年份:2020
- 资助金额:
$ 58.71万 - 项目类别:
Standard Grant
Dependence of Sn whisker nucleation and growth on stress: real-time experiments and development of a predictive model
锡晶须成核和生长对应力的依赖性:实时实验和预测模型的开发
- 批准号:
1903071 - 财政年份:2019
- 资助金额:
$ 58.71万 - 项目类别:
Continuing Grant
Sn whiskers: fundamental mechanisms of nucleation and growth and applications to mitigation
锡晶须:成核和生长的基本机制及其在缓解方面的应用
- 批准号:
1501411 - 财政年份:2015
- 资助金额:
$ 58.71万 - 项目类别:
Continuing Grant
Sn Whisker Nucleation and Growth: Fundamental Mechanisms Controlling Where, When and Why Whiskers Form on Sn Coatings
锡晶须成核和生长:控制锡涂层上晶须形成的地点、时间和原因的基本机制
- 批准号:
1206138 - 财政年份:2012
- 资助金额:
$ 58.71万 - 项目类别:
Continuing Grant
MRI: Acquisition of an Advanced X-ray Diffraction System for the Brown University X-Ray Facility
MRI:为布朗大学 X 射线设施购置先进的 X 射线衍射系统
- 批准号:
1125928 - 财政年份:2011
- 资助金额:
$ 58.71万 - 项目类别:
Standard Grant
Whisker Formation in Sn Coatings on Cu: Fundamental Mechanisms and Approaches to Mitigation
铜上锡镀层中晶须的形成:基本机制和缓解方法
- 批准号:
0856229 - 财政年份:2009
- 资助金额:
$ 58.71万 - 项目类别:
Standard Grant
SGER: Epitaxial Electrodeposition for Large Area Single Crystals
SGER:大面积单晶外延电沉积
- 批准号:
0817507 - 财政年份:2008
- 资助金额:
$ 58.71万 - 项目类别:
Continuing Grant
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