I-Corps: Semiconductor Diode for High Temperature Applications

这个I-Corps团队项目旨在研究能够在超过600摄氏度的温度下工作的肖特基二极管的商业化潜力。肖特基势垒二极管用于商业和军事需求的无线技术，用于配电的高效开关，传感器，光伏逆变器以及汽车工业。目前商用的由SiC制成的肖特基势垒二极管的工作温度限制在300℃以下。人们普遍认为，开发能够在300摄氏度以上进行高温操作而不需要冷却的电子系统，是当前和未来应用的关键技术。在恶劣条件下操作电子元件的能力推动了广泛应用领域的技术进步。提出的新技术有望扩大当前温度限制所设定的创新界限。如果成功，这可能会导致其他电子元件的商业化。目标应用包括石油钻井、汽车、航空航天和空间探索的动力系统。该项目的目标是确定能够在超过600摄氏度的温度下工作的肖特基二极管的商业化潜力。我们技术的创新来自于作为金属触点的材料（难熔金属硼化物和镍镓）以及所采用的独特加工技术。这个过程去除在界面上形成的有害但固有的氧化物。该技术还可以扩展到制造具有类似改进的高温可靠性的晶体管。这项新技术可以减少或完全消除高温电子操作中昂贵的冷却系统。来自I-Corps团队项目的资金将能够评估电子社区针对目标市场的兴趣。这个项目为团队进一步了解该技术的市场机会提供了机会。研讨会和访谈将帮助团队获得对目标客户的看法，从而引导他们选择许可途径、SBIR/STTR衍生途径以进行进一步开发，或者建立商业伙伴关系以完成两者。由于机会的范围相当广泛，团队将使用从该项目收集的信息，优先考虑将有限的资源部署到提供最高商业成功可能性的部门。

This I-Corps Team project seeks to investigate the commercialization potential of Schottky diodes capable of operating at temperatures in excess of 600C. Schottky barrier diodes are used in wireless technologies for commercial and military needs, high efficiency switches for power distribution, sensors, photovoltaic inverters, and in the automobile industry. Schottky barrier diodes made from SiC currently available commercially are limited to operating temperatures below 300C. It is widely accepted that the development of electronic systems capable of high temperature operations above 300C, without the need for cooling, is a critical technology for current and future applications. The ability to operate electronic components in harsh conditions advances technology across a broad spectrum of applications. The proposed new technology is poised to expand the innovation boundaries set by current temperature limitations. If successful, this could lead to commercialization of other electronic components. Target applications include power systems for oil-drilling, automotive, aerospace and space exploration. The goal of this project is to determine the commercialization potential of Schottky diodes capable of operating at temperatures in excess of 600C. The innovation in our technology comes from the materials used as the metal contacts (refractory metal borides and nickel gallide) as well as the unique processing techniques employed. This process removes deleterious but inherent oxides that form at the interface. This technology can also be extended to fabricate transistors with similarly improved high temperature reliability. The new technology could lead to the reduction or complete elimination of expensive cooling systems in high temperature electronics operation. Funds from this I-Corps Team project will enable assessment of interest among the electronics community addressing target markets. This project offers opportunity to further the team's understanding of the market opportunity for the technology. The workshops and interviews will help the team gain perspectives on the target customers and thereby lead them to either a licensing pathway, a spin-out SBIR/STTR pathway for further development, or a commercial partnership to accomplish both. Since the scope of the opportunity is rather wide, the team will use information gathered from this project to prioritize the deployment of limited resources towards sectors that offer the highest probability of commercial success.