I-Corps: Semiconductor Diode for High Temperature Applications
I-Corps:适用于高温应用的半导体二极管
基本信息
- 批准号:1608463
- 负责人:
- 金额:$ 5万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2016
- 资助国家:美国
- 起止时间:2016-01-15 至 2016-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This I-Corps Team project seeks to investigate the commercialization potential of Schottky diodes capable of operating at temperatures in excess of 600C. Schottky barrier diodes are used in wireless technologies for commercial and military needs, high efficiency switches for power distribution, sensors, photovoltaic inverters, and in the automobile industry. Schottky barrier diodes made from SiC currently available commercially are limited to operating temperatures below 300C. It is widely accepted that the development of electronic systems capable of high temperature operations above 300C, without the need for cooling, is a critical technology for current and future applications. The ability to operate electronic components in harsh conditions advances technology across a broad spectrum of applications. The proposed new technology is poised to expand the innovation boundaries set by current temperature limitations. If successful, this could lead to commercialization of other electronic components. Target applications include power systems for oil-drilling, automotive, aerospace and space exploration. The goal of this project is to determine the commercialization potential of Schottky diodes capable of operating at temperatures in excess of 600C. The innovation in our technology comes from the materials used as the metal contacts (refractory metal borides and nickel gallide) as well as the unique processing techniques employed. This process removes deleterious but inherent oxides that form at the interface. This technology can also be extended to fabricate transistors with similarly improved high temperature reliability. The new technology could lead to the reduction or complete elimination of expensive cooling systems in high temperature electronics operation. Funds from this I-Corps Team project will enable assessment of interest among the electronics community addressing target markets. This project offers opportunity to further the team's understanding of the market opportunity for the technology. The workshops and interviews will help the team gain perspectives on the target customers and thereby lead them to either a licensing pathway, a spin-out SBIR/STTR pathway for further development, or a commercial partnership to accomplish both. Since the scope of the opportunity is rather wide, the team will use information gathered from this project to prioritize the deployment of limited resources towards sectors that offer the highest probability of commercial success.
这个I-Corps团队项目旨在研究能够在超过600 ℃的温度下工作的肖特基二极管的商业化潜力。肖特基势垒二极管用于满足商业和军事需求的无线技术、用于配电的高效开关、传感器、光伏逆变器以及汽车工业。目前市售的由SiC制成的肖特基势垒二极管限于低于300 C的工作温度。人们普遍认为,开发能够在300 ℃以上的高温下工作而不需要冷却的电子系统是当前和未来应用的关键技术。在恶劣条件下操作电子元件的能力在广泛的应用中推动了技术的发展。拟议中的新技术有望扩大目前温度限制所设定的创新边界。如果成功,这可能会导致其他电子元件的商业化。目标应用包括石油钻井、汽车、航空航天和太空探索的电力系统。该项目的目标是确定能够在超过600 ℃的温度下工作的肖特基二极管的商业化潜力。我们的技术创新来自于金属触点所用的材料(难熔金属硼化物和镍镓化物)以及所采用的独特加工技术。该过程去除了在界面处形成的有害但固有的氧化物。该技术还可以扩展到制造具有类似改进的高温可靠性的晶体管。这项新技术可以减少或完全消除高温电子设备操作中昂贵的冷却系统。来自I-Corps团队项目的资金将能够评估电子社区对目标市场的兴趣。该项目提供了机会,以进一步了解该技术的市场机会的团队。研讨会和访谈将帮助团队获得目标客户的观点,从而引导他们进入许可途径、衍生SBIR/STTR途径以进一步发展,或建立商业合作伙伴关系以实现这两个目标。由于机会的范围相当广泛,该团队将利用从该项目中收集的信息,优先将有限的资源部署到商业成功概率最高的部门。
项目成果
期刊论文数量(0)
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科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Tom Oder其他文献
Tom Oder的其他文献
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{{ truncateString('Tom Oder', 18)}}的其他基金
Intergovernmental Mobility Assignment
政府间流动分配
- 批准号:
1946050 - 财政年份:2019
- 资助金额:
$ 5万 - 项目类别:
Intergovernmental Personnel Award
MRI: Acquisition of a Plasma Etching System for Multidisciplinary Research and Education
MRI:采购等离子蚀刻系统用于多学科研究和教育
- 批准号:
1428334 - 财政年份:2014
- 资助金额:
$ 5万 - 项目类别:
Standard Grant
RUI: Growth and Characterization of Epitaxial Zinc Oxide Films for Device Applications
RUI:用于设备应用的外延氧化锌薄膜的生长和表征
- 批准号:
1006083 - 财政年份:2010
- 资助金额:
$ 5万 - 项目类别:
Standard Grant
RUI: Improved Thermal Stability of Metal Contacts and Diffusion Barriers to SiC and AlxGa1-xN using Refractory Metal Borides
RUI:使用难熔金属硼化物提高 SiC 和 AlxGa1-xN 金属接触和扩散势垒的热稳定性
- 批准号:
0622086 - 财政年份:2006
- 资助金额:
$ 5万 - 项目类别:
Standard Grant
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