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SHF: SMALL: Collaborative Research: Improving Reliability of In-Memory Storage

SHF: SMALL: Collaborative Research: Improving Reliability of In-Memory Storage
SHF:SMALL:协作研究:提高内存存储的可靠性
批准号:
1618536
负责人:
Yifeng Zhu
金额:
$21.36万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2016
资助国家:
美国
项目状态:
已结题
起止时间:
2016-08-01 至 2022-07-31

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中文摘要
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英文摘要
Emerging nonvolatile memory (NVM) technologies, such as PCM, STT-RAM, and memristors, provide not only byte-addressability, low-latency reads and writes comparable to DRAM, but also persistent writes and potentially large storage capacity like an SSD. These advantages make NVM likely to be next-generation fast persistent storage for massive data, referred to as in-memory storage. Yet, NVM-based storage has two challenges: (1) Memory cells have limited write endurance (i.e., the total number of program/erase cycles per cell); (2) NVM has to remain in a consistent state in the event of a system crash or power loss. The goal of this project is to develop an efficient in-memory storage framework that addresses these two challenges. This project involves undergraduate and graduate students. All software artifacts and tools will be made available to the wider research community. The work has broader industrial and economic impact since it will help improve the reliability of data storage systems for data centers and HPC applications. This project will take a holistic approach, spanning from low-level architecture design to high-level OS management, to optimize the reliability, performance, and manageability of in-memory storage. The technical approach will involve understanding the implication and impact of the write endurance issue when cutting-edge NVM is adopted into storage systems. The improved understanding will motivate and aid the design of cost-effective methods to improve the life-time of in-memory storage and to achieve efficient and reliable consistence maintenance.
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