MRI: Acquisition of an Inductively Coupled Plasma Reactive-Ion Etching System for Research and Education in Nanophotonics, Nanoelectronics and Nano-Bio Devices
MRI: Acquisition of an Inductively Coupled Plasma Reactive-Ion Etching System for Research and Education in Nanophotonics, Nanoelectronics and Nano-Bio Devices
批准号:
1625998
负责人:
Jing Zhang
金额:
$30.5万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2016
资助国家:
美国
项目状态:
已结题
起止时间:
2016-09-01 至 2017-08-31
中文摘要
这项主要研究仪器(MRI)资金将支持购买电感耦合等离子体反应离子蚀刻(ICP-RIE)系统,以实现纳米光子学,纳米电子学和纳米生物器件的基础研究和教育。此次MRI收购的目的是促进科学和工程领域新的和现有的多学科研究,促进教育课程开发,并促进罗切斯特理工学院(RIT)的推广活动。ICP-RIE系统将实现RIT和罗切斯特地区目前不存在的光子、电子和生物器件制造能力。所要求的ICP-RIE系统将为各种材料系统提供干法刻蚀能力,如化合物半导体,介电材料和金属,具有快速的刻蚀速率,良好的控制选择性和有前途的均匀性。该仪器是必不可少的,使基础研究和教育的三族氮化物基发光二极管(LED)和激光器,无缝集成强大的和低功率的III-V量子点(QD)激光器与硅光子,III-V隧穿场效应晶体管,存储设备的计算,量子点和纳米线光电子学,三族氮化物光电探测器的惯性约束聚变研究,纳米等离子体激元器件,以及用于有效生物分子转移的纳米生物器件。所要求的仪器将是RIT的第一个ICP干蚀刻工具,它将由科学和工程领域所有学科的研究小组与微系统工程博士培训的学生共享。程序和博士在工程计划。该工具还将由罗切斯特地区的外部研究小组共享,以加强RIT与该地区其他学院、国家实验室和小企业之间的研究和合作。ICP-RIE系统将被指定为一个共享的用户设施,可用于RIT的本科生和研究生的新课程和实验室部分的设备制造开发,他们可以接受下一代科学家和工程师的培训。拟议的仪器提供的制造能力将有利于在RIT的几个基础课程和实验室部分专注于纳米纤维和半导体器件的课程开发。此外,透过RIT外展活动,利用干蚀刻机为K-12学生及教师设计有关光子及电子装置的示范实验,以激发K-12学生日后修读科学、技术、工程及数学(STEM)学科的兴趣。还将促进与这些示范实验的联系,以培训RIT现有的妇女和代表性不足的少数民族学生。
英文摘要
This Major Research Instrumentation (MRI) funding will support the acquisition of an inductively coupled plasma reactive-ion etching (ICP-RIE) system to enable fundamental research and education in nanophotonics, nanoelectronics and nano-bio devices. The objective of this MRI acquisition is to facilitate new and existing multidisciplinary research in science and engineering, enable educational curriculum development, and promote outreach activities at Rochester Institute of Technology (RIT). The ICP-RIE system will enable photonic, electronic and bio device fabrication capability that does not exist presently at RIT and Rochester region. The requested ICP-RIE system will provide dry etching capability for various material systems such as compound semiconductors, dielectric materials, and metals with fast etching rate, well-controlled selectivity, and promising uniformity. The instrument is essential to enable fundamental research and education on III-Nitride based light emitting diodes (LEDs) and lasers, seamless integration of robust and low-powered III-V quantum dot (QD) lasers with silicon photonics, III-V tunneling field effect transistor, memory devices for computing, QD and nanowire photovoltaics, III-Nitride photodetectors for inertial confinement fusion research, nanoplasmonic devices, and nan-bio devices for efficient biomolecule transfer. The requested instrument will be the first ICP dry etcher tool at RIT, which will be shared by research groups across all disciplines in science and engineering with students trained from Microsystems Engineering Ph.D. program and Ph.D. in Engineering program. The tool will also be shared by external research groups in Rochester region to enhance research and collaborations between RIT and other colleges, national labs, and small businesses in the region. The ICP-RIE system will be designated as a shared user facility, available to new curriculum and lab section development on device fabrications for both undergraduate and graduate students at RIT, whom can be trained for next-generation scientists and engineers. The fabrication capability provided by the proposed instrument would benefit curriculum development at RIT for several fundamental courses and lab sections focused on nanofabrication and semiconductor devices. Demonstration experiments on photonic and electronic devices can also be designed to K-12 students and teachers through RIT outreach activities by the use of the dry etcher, which can stimulate K-12 students' interest to pursue science, technology, engineering, and mathematics (STEM) disciplines in the future. Connectivity with such demonstration experiments will also be promoted to train existing women and underrepresented minority students at RIT.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Early-career Participant Support for Additive Manufacturing Modeling, Simulation, and Machine Learning Symposium at MS&T 2023; Columbus, Ohio; October 1- 4, 2023
-
批准号:2334074
-
项目类别:Standard Grant
-
资助金额:$0.98万
-
财政年份:2023
-
负责人:Jing Zhang
-
依托单位:
Faculty Professional Identity in Community Networks for Course-based Undergraduate Research Experiences
-
批准号:2321218
-
项目类别:Standard Grant
-
资助金额:$34.98万
-
财政年份:2023
-
负责人:Jing Zhang
-
依托单位:
Participant Support for Symposium of Additive Manufacturing Modeling, Simulation, and Machine Learning (MS&T22); Pittsburgh, Pennsylvania; 9-13 October 2022
-
批准号:2229993
-
项目类别:Standard Grant
-
资助金额:$0.98万
-
财政年份:2022
-
负责人:Jing Zhang
-
依托单位:
GP-UP: Enhancing Recruitment and Retention of Underrepresented Minorities in Atmospheric Sciences at NCAT
-
批准号:2119860
-
项目类别:Standard Grant
-
资助金额:$31.48万
-
财政年份:2021
-
负责人:Jing Zhang
-
依托单位:
Student Support: 2020 World Congress on Powder Metallurgy and Particulate Materials conference (WorldPM2020); Montreal, Canada; June 27-July 1, 2020
-
批准号:1936290
-
项目类别:Standard Grant
-
资助金额:$4.6万
-
财政年份:2019
-
负责人:Jing Zhang
-
依托单位:
Student Support: 2019 Metal Powder Industries Federation (MPIF) Annual Conference; Phoenix, Arizona; June 23-26, 2019
-
批准号:1832745
-
项目类别:Standard Grant
-
资助金额:$4.23万
-
财政年份:2018
-
负责人:Jing Zhang
-
依托单位:
CAREER: Development of High-Efficiency Ultraviolet Optoelectronics: Physics and Novel Device Concepts
-
批准号:1751675
-
项目类别:Standard Grant
-
资助金额:$50.01万
-
财政年份:2018
-
负责人:Jing Zhang
-
依托单位:
MRI: Acquisition of a Hybrid CPU/GPU High Performance Computing Cluster for Research and Education at Lamar University
-
批准号:1726500
-
项目类别:Standard Grant
-
资助金额:$51.6万
-
财政年份:2017
-
负责人:Jing Zhang
-
依托单位:
Collaborative Research: Present and Projected Future Forcings on Antarctic Peninsula Glaciers and Ice Shelves using the Weather Forecasting and Research (WRF) Model
-
批准号:1543445
-
项目类别:Continuing Grant
-
资助金额:$33.06万
-
财政年份:2016
-
负责人:Jing Zhang
-
依托单位:
Collaborative Research: What Role Do Glaciers Play in Terrestrial Sub-Arctic Hydrology?
-
批准号:1304684
-
项目类别:Standard Grant
-
资助金额:$8.23万
-
财政年份:2013
-
负责人:Jing Zhang
-
依托单位:
海外基金