CAREER: Development of High-Efficiency Ultraviolet Optoelectronics: Physics and Novel Device Concepts

本CAREER项目的目标是通过全面的实验和理论结合研究，了解半导体深紫外发射器的基本物理，并以新型纳米结构、材料和器件概念的形式确定和演示解决方案，显著提高紫外光电子学的效率。为了解决iii -氮化物半导体紫外发光二极管的基本问题，将探索新型纳米结构，替代材料候选材料和非常规紫外光电子学，以开发下一代高效紫外光源，这些光源将通过3D打印中树脂和聚合物的固化等应用对社会产生重大影响；医疗用光疗；农业植物照明；水/空气消毒;以及生物感应。该项目为本科生和研究生提供电气工程、材料科学和物理等多学科领域的教育培训。与研究相结合的外展计划包括让国家聋人技术研究所的学生参与进来，促进女性在工程领域的联系和代表性，并为K-12学生和教师开发培训课程和示范。技术描述：本CAREER项目旨在通过学习和开发新的量子阱有源区设计、替代材料和非常规器件概念中光子发射物理学的基本新方面，实现高效紫外光子器件。本研究将著重深入了解基础物理学，深入探索发光二极管器件的实现，以及全面的物理驱动特性，以设计从300 nm到220 nm的高效偏振相关紫外光电子器件。特别是，纳米结构的量子阱结构将被提出和研究，以解决传统的iii -氮化物紫外线发射器的基本问题。在这些极端量子结构活性区域的新物理将进行深入的研究，以实现高效率的紫外光电子学，包括外延生长，材料表征，器件制造和测量，再加上严格的理论分析。其他候选材料也将被探索作为紫外光子发射器的活跃区域。将开发非常规紫外光电器件概念，以阐明对下一代高效紫外光源的追求。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

The objective of this CAREER project is to understand fundamental physics of semiconductor deep ultraviolet emitters through a comprehensive combined experimental and theoretical study, and to identify and demonstrate solutions in the form of novel nanostructures, materials and device concepts for ultraviolet optoelectronics with significantly improved efficiency. To address the fundamental issues from III-Nitride semiconductor ultraviolet light emitting diodes, novel nanostructures, alternative material candidates, and unconventional ultraviolet optoelectronics will be explored to develop next-generation high-efficiency ultraviolet light sources that will have significant impact on the society through applications such as curing of resins and polymers in 3D printing; phototherapy for medical treatment; agricultural plant lighting; water/air disinfection; and bio-agent sensing. This project offers educational training in multidisciplinary areas such as Electrical Engineering, Material Science, and Physics for both undergraduate and graduate students. The outreach plan which will be integrated with the research includes involving students from National Technical Institute for the Deaf, promoting connectivity and representation of females in engineering, and developing training courses and demonstrations for K-12 students and teachers. Technical Description: This CAREER project aims to realize high-efficiency ultraviolet photonic devices based on learning and exploiting the fundamentally new aspects of the physics of photon emission from novel quantum well active region design, alternative materials, and unconventional device concepts. This research will focus on in-depth understanding of fundamental physics, a thorough exploration of light emitting diode device realization, and comprehensive physics-driven characterizations for designing high-efficiency polarization-dependent ultraviolet optoelectronics emitting from 300 nm down to 220 nm. In particular, nanostructured quantum well structures will be proposed and investigated to address the fundamental issue from conventional III-Nitride ultraviolet emitters. The novel physics in these extreme quantum structure active regions will be investigated thoroughly, with the goal of realizing high-efficiency ultraviolet optoelectronics which involves epitaxial growths, material characterizations, device fabrications and measurements, coupled with rigorous theoretical analysis. Alternative material candidates will be explored to serve as active region for ultraviolet photon emitters as well. Unconventional ultraviolet optoelectronic device concepts will be developed to shed light on the pursuit of next-generation high-efficiency ultraviolet light sources.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.