CAREER: Development of High-Efficiency Ultraviolet Optoelectronics: Physics and Novel Device Concepts

职业：高效紫外光电子学的开发：物理学和新颖的设备概念

• 批准号: 1751675
• 负责人: Jing Zhang
• 金额: $ 50.01万
• 依托单位: Rochester Institute of Tech
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2018
• 资助国家: 美国
• 起止时间: 2018-03-15 至 2025-02-28
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1751675&HistoricalAwards=false
• 关键词: CAREER; Development; Efficiency; Ultraviolet; Optoelectronics

The objective of this CAREER project is to understand fundamental physics of semiconductor deep ultraviolet emitters through a comprehensive combined experimental and theoretical study, and to identify and demonstrate solutions in the form of novel nanostructures, materials and device concepts for ultraviolet optoelectronics with significantly improved efficiency. To address the fundamental issues from III-Nitride semiconductor ultraviolet light emitting diodes, novel nanostructures, alternative material candidates, and unconventional ultraviolet optoelectronics will be explored to develop next-generation high-efficiency ultraviolet light sources that will have significant impact on the society through applications such as curing of resins and polymers in 3D printing; phototherapy for medical treatment; agricultural plant lighting; water/air disinfection; and bio-agent sensing. This project offers educational training in multidisciplinary areas such as Electrical Engineering, Material Science, and Physics for both undergraduate and graduate students. The outreach plan which will be integrated with the research includes involving students from National Technical Institute for the Deaf, promoting connectivity and representation of females in engineering, and developing training courses and demonstrations for K-12 students and teachers. Technical Description: This CAREER project aims to realize high-efficiency ultraviolet photonic devices based on learning and exploiting the fundamentally new aspects of the physics of photon emission from novel quantum well active region design, alternative materials, and unconventional device concepts. This research will focus on in-depth understanding of fundamental physics, a thorough exploration of light emitting diode device realization, and comprehensive physics-driven characterizations for designing high-efficiency polarization-dependent ultraviolet optoelectronics emitting from 300 nm down to 220 nm. In particular, nanostructured quantum well structures will be proposed and investigated to address the fundamental issue from conventional III-Nitride ultraviolet emitters. The novel physics in these extreme quantum structure active regions will be investigated thoroughly, with the goal of realizing high-efficiency ultraviolet optoelectronics which involves epitaxial growths, material characterizations, device fabrications and measurements, coupled with rigorous theoretical analysis. Alternative material candidates will be explored to serve as active region for ultraviolet photon emitters as well. Unconventional ultraviolet optoelectronic device concepts will be developed to shed light on the pursuit of next-generation high-efficiency ultraviolet light sources.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

该CAREER项目的目标是通过全面的实验和理论研究相结合，了解半导体深紫外发射器的基础物理，并确定和展示以新型纳米结构，材料和紫外光电子器件概念形式的解决方案，并显着提高效率。为了解决III族氮化物半导体紫外发光二极管的基本问题，将探索新型纳米结构，替代材料候选物和非常规紫外光电子学，以开发下一代高效紫外光源，这些光源将通过3D打印中的树脂和聚合物固化、医疗光疗、农业植物照明等应用对社会产生重大影响。水/空气消毒;和生物剂传感。该项目为本科生和研究生提供多学科领域的教育培训，如电气工程，材料科学和物理学。将与研究相结合的外联计划包括让国家聋人技术学院的学生参与进来，促进女性在工程领域的连通性和代表性，以及为K-12学生和教师开发培训课程和演示。技术说明：该CAREER项目旨在实现高效紫外光子器件，其基础是学习和利用光子发射物理学的全新方面，包括新颖的量子阱有源区设计，替代材料和非常规器件概念。本研究将侧重于深入了解基础物理，深入探索发光二极管器件的实现，以及设计从300 nm到220 nm发射的高效偏振相关紫外光电子器件的全面物理驱动特性。特别是，纳米结构的量子阱结构将被提出和研究，以解决传统的III族氮化物紫外线发射器的基本问题。这些极端量子结构有源区中的新物理将被彻底研究，目标是实现高效紫外光电子学，其中涉及外延生长，材料表征，器件制造和测量，以及严格的理论分析。替代材料的候选人将探索作为紫外光子发射器的有源区以及。该奖项反映了NSF的法定使命，通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Inverse Tapered AlGaN Micropillar and Nanowire LEDs for Improved Light Extraction Efficiency at 270 nm

• DOI: 10.1109/jphot.2022.3221353
• 发表时间: 2022-12
• 期刊: IEEE Photonics Journal
• 影响因子: 2.4
• 作者: Bryan Melanson;M. Seitz;Jing Zhang

Proposal and Realization of Vertical GaN Nanowire Static Induction Transistor

• DOI: 10.1109/led.2018.2886246
• 发表时间: 2019-02-01
• 期刊: IEEE ELECTRON DEVICE LETTERS
• 影响因子: 4.9
• 作者: Hartensveld, Matthew;Liu, Cheng;Zhang, Jing
• 通讯作者: Zhang, Jing

Monolithic Integration of GaN Nanowire Light-Emitting Diode With Field Effect Transistor

• DOI: 10.1109/led.2019.2895846
• 发表时间: 2019-03-01
• 期刊: IEEE ELECTRON DEVICE LETTERS
• 影响因子: 4.9
• 作者: Hartensveld, Matthew;Zhang, Jing
• 通讯作者: Zhang, Jing

Analysis on light extraction property of AlGaN-based flip-chip ultraviolet light-emitting diodes by the use of self-assembled SiO2 microsphere array

自组装SiO2微球阵列AlGaN基倒装紫外发光二极管的光提取性能分析

• DOI: 10.1117/12.2510488
• 发表时间: 2019
• 期刊: Analysis on light extraction property of AlGaN-based flip-chip ultraviolet light-emitting diodes by the use of self-assembled SiO2 microsphere array
• 作者: Liu, Cheng;Melanson, Bryan;Ooi, Yu Kee;Hartensveld, Matthew;Zhang, Jing
• 通讯作者: Zhang, Jing

Physics of high-efficiency 240–260 nm deep-ultraviolet lasers and light-emitting diodes on AlGaN substrate

AlGaN 衬底上高效 240～260nm 深紫外激光器和发光二极管的物理

• DOI: 10.1063/1.5143723
• 发表时间: 2020
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Liu, Cheng;Zhang, Jing
• 通讯作者: Zhang, Jing