EAGER: Coupled Opto-Electro-Mechanics in Semiconducting Phosphorene

EAGER:半导体磷烯中的耦合光机电

基本信息

  • 批准号:
    1641073
  • 负责人:
  • 金额:
    $ 12.04万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2016
  • 资助国家:
    美国
  • 起止时间:
    2016-07-01 至 2018-12-31
  • 项目状态:
    已结题

项目摘要

Abstract:Non-TechnicalThough black phosphorus was discovered in 1914, understanding of its semiconducting properties in the limit of a few atomic layers are at a nascent state with very few experimental results. There exists no significant application of this atomically-thin nanomaterial to benefit society to date. This research effort will comprehensively investigate the effect of mechanical forces via strain as degrees of freedom for probing several phenomena experimentally including changes in its crystal structure, absorption and emission of light, and transition from a semiconducting to a metallic behavior, all of which, can be utilized to enable novel optoelectronic devices and chips. In light of the recent progress on growing crystals of black phosphorus, this research effort on the strong coupling of mechanical forces on its unique electrical and optical properties can result in breakthrough device applications at practical scales. In addition, graduate and undergraduate students from diverse backgrounds will be trained in conducting research at the frontier of nanomaterials and electronics.Technical:Phosphorene is poised to be the most attractive two-dimensional material owing to its high charge mobilities approaching that of graphene, and its thickness tunable bandgap that can be as large as that of semiconducting transitional metal di-chalcogenides. In essence, phosphorene represents the much sought after high-mobility, tunable direct bandgap atomically layered crystal that is ideal for nanoelectronics, optoelectronics and flexible electronics. In addition, the unique puckered lattice affords in-plane anisotropy that is absent in graphene, leading to strong coupling of mechanical forces with electrons, photons, and phonons that can enable advanced straintronics for efficient nanoscale energy conversion devices and transformational flexible technology. The proposed effort will focus on the strong coupling of mechanical forces on engineering the unique electrical and optical properties of phosphorene that can result in breakthrough device applications. The research effort will consist of two experimental approaches, investigation of the effects of uniaxial strain on the optoelectronic properties, and studies on hydrostatic pressure in triggering structural and electronic phase transitions.
摘要:尽管1914年发现了黑磷,但对其半导体性质的了解仅限于几个原子层,实验结果很少。到目前为止,这种原子薄的纳米材料还没有重大的应用来造福社会。这项研究工作将全面考察作为自由度的机械力对实验中几种现象的影响,包括晶体结构的变化,光的吸收和发射,以及从半导体到金属行为的转变,所有这些都可以用来实现新的光电子器件和芯片。鉴于黑磷晶体生长的最新进展,这种机械力的强耦合对其独特的电学和光学性质的研究将导致在实际规模上的突破性器件应用。此外,来自不同背景的研究生和本科生将接受在纳米材料和电子学前沿领域进行研究的培训。技术:磷烯有望成为最具吸引力的二维材料,因为它的高电荷迁移率接近石墨烯,其厚度可调的带隙可以与半导体过渡金属双硫属化合物的带隙一样大。从本质上讲,膦代表着备受追捧的高迁移率、可调直接带隙原子分层晶体,是纳米电子学、光电子学和柔性电子学的理想之选。此外,独特的褶皱晶格提供了石墨烯所没有的平面内各向异性,导致了机械力与电子、光子和声子的强烈耦合,从而使先进的应变电子学能够实现高效的纳米级能量转换设备和变革性的灵活技术。拟议的努力将集中在机械力的强烈耦合上,以工程磷烯独特的电学和光学特性,从而实现突破性的设备应用。研究工作将包括两个实验方法,研究单轴应变对光电性质的影响,以及研究静水压力在触发结构和电子相变中的作用。

项目成果

期刊论文数量(1)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)

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Deji Akinwande其他文献

Graphene and two-dimensional materials for silicon technology
用于硅技术的石墨烯和二维材料
  • DOI:
    10.1038/s41586-019-1573-9
  • 发表时间:
    2019-09-25
  • 期刊:
  • 影响因子:
    48.500
  • 作者:
    Deji Akinwande;Cedric Huyghebaert;Ching-Hua Wang;Martha I. Serna;Stijn Goossens;Lain-Jong Li;H.-S. Philip Wong;Frank H. L. Koppens
  • 通讯作者:
    Frank H. L. Koppens
Wearable graphene sensors use ambient light to monitor health
可穿戴石墨烯传感器利用环境光来监测健康状况
  • DOI:
    10.1038/d41586-019-03483-7
  • 发表时间:
    2019-11-18
  • 期刊:
  • 影响因子:
    48.500
  • 作者:
    Deji Akinwande;Dmitry Kireev
  • 通讯作者:
    Dmitry Kireev
On-chip atomristors
片上原子电阻器
  • DOI:
    10.1016/j.mser.2025.101006
  • 发表时间:
    2025-07-01
  • 期刊:
  • 影响因子:
    26.800
  • 作者:
    Yue Yuan;Sebastian Pazos;Junzhu Li;Bo Tian;Osamah Alharbi;Xixiang Zhang;Deji Akinwande;Mario Lanza
  • 通讯作者:
    Mario Lanza
3D integrated monolayer graphene–Si CMOS RF gas sensor platform
3D 集成单层石墨烯-Si CMOS 射频气体传感器平台
  • DOI:
    10.1038/s41699-017-0036-0
  • 发表时间:
    2017-10-26
  • 期刊:
  • 影响因子:
    8.800
  • 作者:
    Seyedeh Maryam Mortazavi Zanjani;Milo Holt;Mir Mohammad Sadeghi;Somayyeh Rahimi;Deji Akinwande
  • 通讯作者:
    Deji Akinwande
Signatures of bright-to-dark exciton conversion in corrugated MoS<sub>2</sub> monolayers
  • DOI:
    10.1016/j.apsusc.2022.154078
  • 发表时间:
    2022-10-30
  • 期刊:
  • 影响因子:
  • 作者:
    Maciej Wiesner;Richard H. Roberts;Ruijing Ge;Lukas Mennel;Thomas Mueller;Jung-Fu Lin;Deji Akinwande;Jacek Jenczyk
  • 通讯作者:
    Jacek Jenczyk

Deji Akinwande的其他文献

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{{ truncateString('Deji Akinwande', 18)}}的其他基金

Collaborative Research: FuSe: Monolithic 3D Integration (M3D) of 2D Materials-Based CFET Logic Elements towards Advanced Microelectronics
合作研究:FuSe:面向先进微电子学的基于 2D 材料的 CFET 逻辑元件的单片 3D 集成 (M3D)
  • 批准号:
    2329191
  • 财政年份:
    2023
  • 资助金额:
    $ 12.04万
  • 项目类别:
    Standard Grant
EAGER: PAN-VARIANT COVID-19 DIFFERENTIATED BIOSENSING USING GRAPHENE FIELD-EFFECT SENSORS
EAGER:使用石墨烯场效应传感器进行泛变体 COVID-19 差异化生物传感
  • 批准号:
    2222907
  • 财政年份:
    2022
  • 资助金额:
    $ 12.04万
  • 项目类别:
    Standard Grant
RAPID: Dual COVID-19 and Influenza Virus Detection via Target Antibody-Functionalized Graphene Field-Effect Sensing
RAPID:通过目标抗体功能化石墨烯场效应传感进行双重 COVID-19 和流感病毒检测
  • 批准号:
    2033846
  • 财政年份:
    2020
  • 资助金额:
    $ 12.04万
  • 项目类别:
    Standard Grant
77th Device Research Conference 2019. To Be Held At The University of Michigan, Ann Arbor, June 23-26, 2019
2019 年第 77 届设备研究会议。将于 2019 年 6 月 23-26 日在安娜堡密歇根大学举行
  • 批准号:
    1932825
  • 财政年份:
    2019
  • 资助金额:
    $ 12.04万
  • 项目类别:
    Standard Grant
Mechanistic and Device Studies of the New Observation of Non-Volatile Resistance Switching in Atomic Sheets
原子片非易失性电阻切换新观察的机理和器件研究
  • 批准号:
    1809017
  • 财政年份:
    2018
  • 资助金额:
    $ 12.04万
  • 项目类别:
    Standard Grant
75th Device Research Conference (DRC) 2017. To Be Held at The University of Notre Dame, from June 25 to June 28, 2017.
2017 年第 75 届设备研究会议 (DRC)。将于 2017 年 6 月 25 日至 28 日在圣母大学举行。
  • 批准号:
    1723662
  • 财政年份:
    2017
  • 资助金额:
    $ 12.04万
  • 项目类别:
    Standard Grant
EAGER: Wafer Scalable Dry Transfer of Graphene onto Silicon Substrates
EAGER:将石墨烯干式转移到硅基板上
  • 批准号:
    1444398
  • 财政年份:
    2014
  • 资助金额:
    $ 12.04万
  • 项目类别:
    Standard Grant
I-Corps: Universal Biaxial Compressive Strain Measurement System
I-Corps:通用双轴压缩应变测量系统
  • 批准号:
    1506913
  • 财政年份:
    2014
  • 资助金额:
    $ 12.04万
  • 项目类别:
    Standard Grant
Conference Support Funding for KAUST Electronic Devices, Materials and Systems for Sustainable Future Conference. To be Held at KAUST, Saudi Arabia in Winter 2014.
为 KAUST 电子设备、材料和系统可持续未来会议提供会议支持资金。
  • 批准号:
    1361453
  • 财政年份:
    2013
  • 资助金额:
    $ 12.04万
  • 项目类别:
    Standard Grant
CAREER: Integrated Si-CMOS and Graphene Heterogeneous Nanoelectronics
职业:集成 Si-CMOS 和石墨烯异质纳米电子学
  • 批准号:
    1150034
  • 财政年份:
    2012
  • 资助金额:
    $ 12.04万
  • 项目类别:
    Standard Grant

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