I-Corps: Universal Biaxial Compressive Strain Measurement System

I-Corps:通用双轴压缩应变测量系统

基本信息

  • 批准号:
    1506913
  • 负责人:
  • 金额:
    $ 5万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2014
  • 资助国家:
    美国
  • 起止时间:
    2014-11-15 至 2015-04-30
  • 项目状态:
    已结题

项目摘要

To increase device performance, most materials are often subjected to uniaxial and biaxial states of stress. The material under these types of loadings must be well controlled to achieve the desired gain. Currently, uniaxial compression is considered the easiest method for achieving strain in electronic materials, and widely used in manufacturing advanced semiconductor chips. However, uniaxial strain is limited in its effectiveness in tailoring material properties compared to biaxial strain, hence, its future prospects are restricted. Biaxial stress-strain tests are generally difficult to perform. Some of the challenges include: small sample sizes; grip integrity to the substrate; and deformation homogeneity within the substrate. This effort aims to develop a prototype compressive biaxial strain chamber which can cater to customers who need a reliable biaxial strain measurement system without the limitations of the aforementioned issues that exist in current systems in the market. The proposed project is aimed at advancing the performance of electronic materials used in the semiconductor industry. In particular, those who are seeking to increase device performance, and are looking beyond post-uniaxial solutions for increased efficiency. There are three phases that materials can be categorized into are metals, semiconductors, and insulators. Although, it is expected that these materials would maintain their electrical properties, when compressive strain is applied, the material's conductive properties can be tuned. This modulation of the electronic material properties with strain is known as strain engineering. This I-Corps team proposes that using the biaxial strain system, one can increase device performance not only for silicon based electronics, but also for next-generation nanoscale electronics based on graphene and other two-dimensional materials. In this project, the team will use the biaxial testing setup to measure the strain and pressure-dependent electronic, vibrational, optical and structural properties of multilayered molybdenum disulphide and other 2D materials up to high strain rates (10%).
为了提高器件性能,大多数材料经常受到单轴和双轴状态的应力。必须很好地控制这些类型负载下的材料,以达到所需的增益。目前,单轴压缩被认为是实现电子材料应变的最简单方法,被广泛用于制造先进的半导体芯片。然而,与双轴应变相比,单轴应变在裁剪材料性能方面的效果有限,因此,其未来的发展前景受到限制。双轴应力-应变试验通常很难进行。这些挑战包括:样本量小;握把与基材的完整性;以及基材内部的变形均匀性。这项工作旨在开发一个原型压缩双轴应变室,可以满足客户需要一个可靠的双轴应变测量系统,而不受市场上现有系统存在的上述问题的限制。拟议的项目旨在提高半导体工业中使用的电子材料的性能。特别是那些寻求提高设备性能,并寻求超越后单轴解决方案以提高效率的人。材料可以分为三个阶段:金属、半导体和绝缘体。虽然,预计这些材料将保持其电性能,当施加压缩应变时,材料的导电性能可以调整。这种随应变调制的电子材料特性被称为应变工程。I-Corps团队提出,使用双轴应变系统,不仅可以提高硅基电子器件的性能,还可以提高基于石墨烯和其他二维材料的下一代纳米级电子器件的性能。在这个项目中,该团队将使用双轴测试装置来测量多层二硫化钼和其他二维材料在高应变率(10%)下的应变和压力相关的电子、振动、光学和结构特性。

项目成果

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Deji Akinwande其他文献

Graphene and two-dimensional materials for silicon technology
用于硅技术的石墨烯和二维材料
  • DOI:
    10.1038/s41586-019-1573-9
  • 发表时间:
    2019-09-25
  • 期刊:
  • 影响因子:
    48.500
  • 作者:
    Deji Akinwande;Cedric Huyghebaert;Ching-Hua Wang;Martha I. Serna;Stijn Goossens;Lain-Jong Li;H.-S. Philip Wong;Frank H. L. Koppens
  • 通讯作者:
    Frank H. L. Koppens
Wearable graphene sensors use ambient light to monitor health
可穿戴石墨烯传感器利用环境光来监测健康状况
  • DOI:
    10.1038/d41586-019-03483-7
  • 发表时间:
    2019-11-18
  • 期刊:
  • 影响因子:
    48.500
  • 作者:
    Deji Akinwande;Dmitry Kireev
  • 通讯作者:
    Dmitry Kireev
On-chip atomristors
片上原子电阻器
  • DOI:
    10.1016/j.mser.2025.101006
  • 发表时间:
    2025-07-01
  • 期刊:
  • 影响因子:
    26.800
  • 作者:
    Yue Yuan;Sebastian Pazos;Junzhu Li;Bo Tian;Osamah Alharbi;Xixiang Zhang;Deji Akinwande;Mario Lanza
  • 通讯作者:
    Mario Lanza
3D integrated monolayer graphene–Si CMOS RF gas sensor platform
3D 集成单层石墨烯-Si CMOS 射频气体传感器平台
  • DOI:
    10.1038/s41699-017-0036-0
  • 发表时间:
    2017-10-26
  • 期刊:
  • 影响因子:
    8.800
  • 作者:
    Seyedeh Maryam Mortazavi Zanjani;Milo Holt;Mir Mohammad Sadeghi;Somayyeh Rahimi;Deji Akinwande
  • 通讯作者:
    Deji Akinwande
Signatures of bright-to-dark exciton conversion in corrugated MoS<sub>2</sub> monolayers
  • DOI:
    10.1016/j.apsusc.2022.154078
  • 发表时间:
    2022-10-30
  • 期刊:
  • 影响因子:
  • 作者:
    Maciej Wiesner;Richard H. Roberts;Ruijing Ge;Lukas Mennel;Thomas Mueller;Jung-Fu Lin;Deji Akinwande;Jacek Jenczyk
  • 通讯作者:
    Jacek Jenczyk

Deji Akinwande的其他文献

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{{ truncateString('Deji Akinwande', 18)}}的其他基金

Collaborative Research: FuSe: Monolithic 3D Integration (M3D) of 2D Materials-Based CFET Logic Elements towards Advanced Microelectronics
合作研究:FuSe:面向先进微电子学的基于 2D 材料的 CFET 逻辑元件的单片 3D 集成 (M3D)
  • 批准号:
    2329191
  • 财政年份:
    2023
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
EAGER: PAN-VARIANT COVID-19 DIFFERENTIATED BIOSENSING USING GRAPHENE FIELD-EFFECT SENSORS
EAGER:使用石墨烯场效应传感器进行泛变体 COVID-19 差异化生物传感
  • 批准号:
    2222907
  • 财政年份:
    2022
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
RAPID: Dual COVID-19 and Influenza Virus Detection via Target Antibody-Functionalized Graphene Field-Effect Sensing
RAPID:通过目标抗体功能化石墨烯场效应传感进行双重 COVID-19 和流感病毒检测
  • 批准号:
    2033846
  • 财政年份:
    2020
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
77th Device Research Conference 2019. To Be Held At The University of Michigan, Ann Arbor, June 23-26, 2019
2019 年第 77 届设备研究会议。将于 2019 年 6 月 23-26 日在安娜堡密歇根大学举行
  • 批准号:
    1932825
  • 财政年份:
    2019
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
Mechanistic and Device Studies of the New Observation of Non-Volatile Resistance Switching in Atomic Sheets
原子片非易失性电阻切换新观察的机理和器件研究
  • 批准号:
    1809017
  • 财政年份:
    2018
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
75th Device Research Conference (DRC) 2017. To Be Held at The University of Notre Dame, from June 25 to June 28, 2017.
2017 年第 75 届设备研究会议 (DRC)。将于 2017 年 6 月 25 日至 28 日在圣母大学举行。
  • 批准号:
    1723662
  • 财政年份:
    2017
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
EAGER: Coupled Opto-Electro-Mechanics in Semiconducting Phosphorene
EAGER:半导体磷烯中的耦合光机电
  • 批准号:
    1641073
  • 财政年份:
    2016
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
EAGER: Wafer Scalable Dry Transfer of Graphene onto Silicon Substrates
EAGER:将石墨烯干式转移到硅基板上
  • 批准号:
    1444398
  • 财政年份:
    2014
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
Conference Support Funding for KAUST Electronic Devices, Materials and Systems for Sustainable Future Conference. To be Held at KAUST, Saudi Arabia in Winter 2014.
为 KAUST 电子设备、材料和系统可持续未来会议提供会议支持资金。
  • 批准号:
    1361453
  • 财政年份:
    2013
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
CAREER: Integrated Si-CMOS and Graphene Heterogeneous Nanoelectronics
职业:集成 Si-CMOS 和石墨烯异质纳米电子学
  • 批准号:
    1150034
  • 财政年份:
    2012
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant

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