STTR Phase I: Nondestructive high-resolution measurement of semiconductor carrier density

STTR 第一阶段：半导体载流子密度的无损高分辨率测量

• 批准号: 1648811
• 负责人: Mark Hagmann
• 金额: $ 22.45万
• 依托单位: NewPath Research L.L.C.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-01-15 至 2018-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1648811&HistoricalAwards=false
• 关键词: STTR; Phase; Nondestructive; resolution; measurement

This Small Business Technology Transfer Phase I project will develop advanced tools for semiconductor metrology that are essential for high accuracy at finer resolution as progress continues to the finer lithography nodes. This progress is essential to satisfy the demand for greater performance in numerous consumer products as well as many other applications. The intellectual merit of this project lies in a newly-discovered optoelectronic effect which will provide much finer resolution in measuring the local density of the charge carriers in semiconductors, and this new method shows promise for achieving sub-nanometer resolution. Roadmaps for the semiconductor industry call for finer resolution, and this project is responding to specific needs outlined therein.

这个小型企业技术转让第一阶段项目将开发先进的半导体计量工具，随着光刻技术向更精细节点的发展，这些工具对更精细分辨率的高精度至关重要。这一进展对于满足众多消费品以及许多其他应用对更高性能的需求至关重要。该项目的智力价值在于新发现的光电效应，该效应将在测量半导体中电荷载流子的局部密度时提供更精细的分辨率，并且这种新方法有望实现亚纳米分辨率。半导体行业的路线图要求更高的分辨率，而该项目正在响应其中概述的特定需求。

项目成果

Electrode control methodology for a scanning tunneling microscope

扫描隧道显微镜的电极控制方法

• 发表时间: 2018
• 期刊: U.S. patentSearch claims & abstracts
• 作者: Hagmann, M.

Development of a multifunction prototype for the carrier profiling of semiconductors by scanning frequency comb microscopy

开发用于通过扫描频率梳显微镜进行半导体载流子分析的多功能原型

• DOI: 10.1109/wmed.2017.7916925
• 发表时间: 2017
• 期刊: Development of a multifunction prototype for the carrier profiling of semiconductors by scanning frequency comb microscopy
• 作者: Hagmann, Mark J.

Overcoated diamond tips for nanometer-scale semiconductor device characterization

用于纳米级半导体器件表征的涂层金刚石尖端

• DOI: 10.1016/j.mee.2014.11.023
• 发表时间: 2015
• 期刊: Microelectronic Engineering
• 影响因子: 2.3
• 作者: Hantschel, T.;Tsigkourakos, M.;Kluge, J.;Werner, T.;Zha, L.;Paredis, K.;Eyben, P.;Nuytten, T.;Xu, Z.;Vandervorst, W.
• 通讯作者: Vandervorst, W.

scanning frequency comb microscopy: a new method in scanning probe microscopy

扫描频率梳显微镜：扫描探针显微镜的新方法

• DOI: 10.13140/rg.2.2.34585.72804
• 发表时间: 2018
• 期刊: scanning frequency comb microscopy: a new method in scanning probe microscopy
• 作者: Hagmann, M.

Increased versatility for carrier profiling of semiconductors by scanning frequency comb microscopy (SFCM)

通过扫描频率梳显微镜 (SFCM) 提高半导体载流子分析的多功能性

• DOI: 10.1109/wmed.2017.7916928
• 发表时间: 2017
• 期刊: Increased versatility for carrier profiling of semiconductors by scanning frequency comb microscopy (SFCM
• 作者: Birch, Timothy;Hagmann, Mark J.
• 通讯作者: Hagmann, Mark J.