STTR Phase I: Nondestructive high-resolution measurement of semiconductor carrier density
STTR Phase I: Nondestructive high-resolution measurement of semiconductor carrier density
批准号:
1648811
负责人:
Mark Hagmann
金额:
$22.45万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2017
资助国家:
美国
项目状态:
已结题
起止时间:
2017-01-15 至 2018-07-31
中文摘要
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英文摘要
This Small Business Technology Transfer Phase I project will develop advanced tools for semiconductor metrology that are essential for high accuracy at finer resolution as progress continues to the finer lithography nodes. This progress is essential to satisfy the demand for greater performance in numerous consumer products as well as many other applications. The intellectual merit of this project lies in a newly-discovered optoelectronic effect which will provide much finer resolution in measuring the local density of the charge carriers in semiconductors, and this new method shows promise for achieving sub-nanometer resolution. Roadmaps for the semiconductor industry call for finer resolution, and this project is responding to specific needs outlined therein.
期刊论文(17)
专著(0)
科研奖励(0)
会议论文
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DOI:
--
发表时间:
2018
期刊:
U.S. patentSearch claims & abstracts
影响因子:
--
作者:
[Hagmann, M.]
通讯作者:
Hagmann, M.
Development of a multifunction prototype for the carrier profiling of semiconductors by scanning frequency comb microscopy
开发用于通过扫描频率梳显微镜进行半导体载流子分析的多功能原型
DOI:
10.1109/wmed.2017.7916925
发表时间:
2017
期刊:
Development of a multifunction prototype for the carrier profiling of semiconductors by scanning frequency comb microscopy
影响因子:
--
作者:
[Hagmann, Mark J.]
通讯作者:
Hagmann, Mark J.
Overcoated diamond tips for nanometer-scale semiconductor device characterization
用于纳米级半导体器件表征的涂层金刚石尖端
DOI:
10.1016/j.mee.2014.11.023
发表时间:
2015
期刊:
Microelectronic Engineering
影响因子:
2.3
作者:
[Hantschel, T., Tsigkourakos, M., Kluge, J., Werner, T., Zha, L., Paredis, K., Eyben, P., Nuytten, T., Xu, Z., Vandervorst, W.]
通讯作者:
Vandervorst, W.
scanning frequency comb microscopy: a new method in scanning probe microscopy
扫描频率梳显微镜:扫描探针显微镜的新方法
DOI:
10.13140/rg.2.2.34585.72804
发表时间:
2018
期刊:
scanning frequency comb microscopy: a new method in scanning probe microscopy
影响因子:
--
作者:
[Hagmann, M.]
通讯作者:
Hagmann, M.
Increased versatility for carrier profiling of semiconductors by scanning frequency comb microscopy (SFCM)
通过扫描频率梳显微镜 (SFCM) 提高半导体载流子分析的多功能性
DOI:
10.1109/wmed.2017.7916928
发表时间:
2017
期刊:
Increased versatility for carrier profiling of semiconductors by scanning frequency comb microscopy (SFCM
影响因子:
--
作者:
[Birch, Timothy, Hagmann, Mark J.]
通讯作者:
Hagmann, Mark J.
共 17 条
STTR Phase I: Fabrication and Testing of Laser-Assisted Terahertz Field Emitters
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批准号:0712564
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项目类别:Standard Grant
-
资助金额:$15.0万
-
财政年份:2007
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负责人:Mark Hagmann
-
依托单位:
SBIR Phase I: Ultrafast Optoelectronic Devices Based on Field Emission
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批准号:0338928
-
项目类别:Standard Grant
-
资助金额:$6.81万
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财政年份:2004
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负责人:Mark Hagmann
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依托单位:
Computer and Data Aquisition Board
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批准号:9500007
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项目类别:Standard Grant
-
资助金额:$0.41万
-
财政年份:1995
-
负责人:Mark Hagmann
-
依托单位:
SGER: Experiments Pursant to Determining the Duration of Barrier Traversal in Quantum Tunneling
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批准号:9303397
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项目类别:Standard Grant
-
资助金额:$1.4万
-
财政年份:1993
-
负责人:Mark Hagmann
-
依托单位:
国内基金
海外基金
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Baryogenesis, Dark Matter and Nanohertz Gravitational Waves from a Dark
Supercooled Phase Transition
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批准号:24ZR1429700
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项目类别:省市级项目
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资助金额:--
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批准年份:2024
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负责人:YUICHIRO NAKAI
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依托单位:
ATLAS实验探测器Phase 2升级
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批准号:11961141014
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项目类别:国际(地区)合作与交流项目
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资助金额:3350万元
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批准年份:2019
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负责人:刘衍文
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依托单位:
地幔含水相Phase E的温度压力稳定区域与晶体结构研究
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批准号:41802035
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项目类别:青年科学基金项目
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资助金额:12.0万元
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批准年份:2018
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负责人:张里
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依托单位:
基于数字增强干涉的Phase-OTDR高灵敏度定量测量技术研究
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批准号:61675216
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项目类别:面上项目
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资助金额:60.0万元
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批准年份:2016
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负责人:叶青
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依托单位:
基于Phase-type分布的多状态系统可靠性模型研究
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批准号:71501183
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项目类别:青年科学基金项目
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资助金额:17.4万元
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批准年份:2015
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负责人:陈童
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依托单位:
纳米(I-Phase+α-Mg)准共晶的临界半固态形成条件及生长机制
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批准号:51201142
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项目类别:青年科学基金项目
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资助金额:25.0万元
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批准年份:2012
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负责人:张英波
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依托单位:
连续Phase-Type分布数据拟合方法及其应用研究
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批准号:11101428
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项目类别:青年科学基金项目
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资助金额:23.0万元
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批准年份:2011
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负责人:黄卓
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依托单位:
D-Phase准晶体的电子行为各向异性的研究
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批准号:19374069
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项目类别:面上项目
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资助金额:6.4万元
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批准年份:1993
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负责人:张殿琳
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依托单位: