CAREER: Fundamental Electronic Device Performance and Reliability Investigation on Chalcogenide- and Oxide-based N- and P-type Materials for Large Area/Flexible Electronics

职业：用于大面积/柔性电子产品的硫族化物和氧化物基 N 型和 P 型材料的基础电子器件性能和可靠性研究

• 批准号: 1653343
• 负责人: Chadwin Young
• 金额: $ 50万
• 依托单位: University of Texas at Dallas
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-03-01 至 2023-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1653343&HistoricalAwards=false
• 关键词: CAREER; Fundamental; Electronic; Device; Performance

Large area/flexible electronics presents new opportunities for applications benefiting society, such as low- cost, flexible and self-powered sensors, wearable, and even biocompatible electronics. These systems may include "smart" medical bandages that monitor the healing of wounds and medical triage patches that monitor vital signs. Also, light-weight and rugged flexible decals are a potential application for inventory tracking, pollution monitoring, structural reliability of buildings/bridges in urban areas, etc. Currently, a typical fabrication approach to enable circuitry for these applications will use organic materials in a complex integration scheme with inorganic materials "hybrid approach" that will be more costly compared to the proposed work. In addition, a serious limitation of the hybrid approach is device and circuit performance limitations due to exposure of organics to the ambient. To enable high performance systems applications for large area electronics such as "smart" bio monitoring patches, flexible sensors, RFIDs, and microcontrollers, the incorporation of low cost, non-silicon thin-film transistor materials compatible with mechanically flexible properties is essential. Moreover, the flexible application requires substrates processed at relatively low temperatures ( 180°C) compared to conventional silicon-based chip manufacturing. To address this performance gap at low cost, this research proposes exploring an entirely inorganic, non-hybrid semiconductor technology using chalcogenides (sulfur- and tellurium-based materials) and oxides (zinc oxide-based, nickel oxide and tin oxide materials). Using these semiconducting materials will result in a revolution of large-area/flexible electronics by enabling straightforward integration of multiple components (i.e., energy storage/harvesting, displays, and sensors) on a single substrate. Furthermore, they will have a resounding impact on the Internet of Things, medical, defense, and sensors by enabling technologies where it may not be practical and cost effective for silicon. Finally, the education/outreach objectives include engaging with middle school STEM educators for on-campus research in the PI"s lab and incorporating the experience into innovative curriculum plans to take back to their students. In addition, there will be implementation of "units of learning" that incorporate large-area/flex technology into advanced-level courses while also providing undergraduate research opportunities.The objective of this proposal is to fundamentally explore the use of inorganic, low temperature ( 180ºC) chalcogenide- and oxide-based n-type and p-type thin-film semiconductors for low-cost, large-area/flex- compatible devices and circuits. The research plan consists of four (4) phases: (I) materials evaluation; (II) device fabrication; (III) device characterization; and (IV) device simulation/modeling. Using physical and electrical characterization along with modeling/simulation, a comprehensive investigation will provide fundamental device performance and reliability understanding. This work will provide the opportunity to have Cd- and Pb-free materials for p- and n-type semiconductors with high carrier mobility and electrical stability for implantable or wearable electronics. Furthermore, the demonstration of large-area/flex- compatible p/n junctions, junction field effect transistors, and thin-film transistors will truly take large- area/flex processing to new heights and permit complementary circuit capabilities, such as thin film amplifiers and logic circuitry, that have not been demonstrated using appropriate processing conditions (i.e., low temp) for integration into sensors, smart bandages, detectors, RFIDs, etc. This work addresses current challenges in large-area/flex-compatible circuitry where all-inorganic, n- and p-type semiconductor devices, and circuits are vital because an organic-only or a partially organic hybrid approach has more pronounced long-term degradation of organic-based devices. Therefore, inorganic materials and devices are preferred in order to create the needed circuitry. Using these semiconducting materials will result in a revolution of large-area and flexible electronics by enabling straightforward integration of multiple components such as energy storage/harvesting, displays, and sensors on a single substrate. Furthermore, they will have a resounding impact on the Internet of Things, medical, defense, and sensors by enabling technologies where it may not be practical and cost effective for silicon.

大面积/柔性电子产品为造福社会的应用提供了新的机遇，例如低成本、柔性和自供电传感器、可穿戴甚至生物相容性电子产品。这些系统可能包括监测伤口愈合的“智能”医用绷带和监测生命体征的医疗分类贴片。此外，轻质且坚固的柔性贴花是库存跟踪、污染监测、城市地区建筑物/桥梁的结构可靠性等方面的潜在应用。目前，为这些应用提供电路的典型制造方法将在复杂的集成方案中使用有机材料与无机材料“混合方法”，与拟议的工作相比，成本将更高。此外，混合方法的一个严重限制是由于有机物暴露在环境中而导致的器件和电路性能限制。为了实现大面积电子产品的高性能系统应用，例如“智能”生物监测贴片、柔性传感器、RFID 和微控制器，必须采用与机械柔性特性兼容的低成本、非硅薄膜晶体管材料。此外，与传统的硅基芯片制造相比，灵活的应用需要在相对较低的温度（180°C）下处理基板。为了以低成本解决这一性能差距，本研究建议探索一种使用硫属化物（硫基和碲基材料）和氧化物（氧化锌基、氧化镍和氧化锡材料）的完全无机、非混合半导体技术。使用这些半导体材料将通过在单个基板上直接集成多个组件（即能量存储/收集、显示器和传感器）来引发大面积/柔性电子设备的革命。此外，它们还将通过支持硅技术可能不实用且不具成本效益的技术，对物联网、医疗、国防和传感器产生巨大影响。最后，教育/推广目标包括与中学 STEM 教育工作者合作，在 PI 实验室进行校园研究，并将这些经验纳入创新课程计划中，以带回学生。此外，还将实施“学习单元”，将大面积/柔性技术纳入高级课程，同时也提供本科生研究机会。该提案的目标是从根本上探索无机、低密度材料的使用。 温度 (180°C) 硫族化物和氧化物的 n 型和 p 型薄膜半导体，用于低成本、大面积/柔性兼容的设备和电路。研究计划由四（4）个阶段组成：（I）材料评估； （二）器件制造； (III) 器件表征； (IV) 设备模拟/建模。使用物理和电气特性以及 建模/仿真，全面的调查将提供基本的设备性能和可靠性理解。这项工作将为 p 型和 n 型半导体提供无镉和无铅材料，为可植入或可穿戴电子产品提供高载流子迁移率和电稳定性。此外，大面积/柔性兼容 p/n 结、结型场效应晶体管和薄膜晶体管的演示将 真正将大面积/柔性处理提升到新的高度，并允许补充电路功能，例如薄膜放大器和逻辑电路，这些功能尚未使用适当的处理条件（即低温）证明可以集成到传感器、智能绷带、探测器、RFID等中。这项工作解决了大面积/柔性兼容电路中当前的挑战，其中全无机、n型和p型半导体 器件和电路至关重要，因为纯有机或部分有机混合方法会使有机器件的长期退化更加明显。因此，为了创建所需的电路，优选无机材料和器件。使用这些半导体材料将通过直接集成多个组件（例如能量存储/收集、显示器和 单个基板上的传感器。此外，它们还将通过支持硅技术可能不实用且不具成本效益的技术，对物联网、医疗、国防和传感器产生巨大影响。

项目成果

Positive Bias Instability in ZnO TFTs with Al 2 O 3 Gate Dielectric

具有 Al 2 O 3 栅极电介质的 ZnO TFT 的正偏压不稳定性

• DOI: 10.1109/irps.2019.8720547
• 发表时间: 2019
• 期刊: 2019 IEEE International Reliability Physics Symposium (IRPS
• 作者: Bolshakov, Pavel;Rodriguez-Davila, Rodolfo A.;Quevedo-Lopez, Manuel;Young, Chadwin D.
• 通讯作者: Young, Chadwin D.

Introduction of a Reset MOSFET to Mitigate the Influence of Ionic Movement in Perovskite MOSFET Photodetector Measurements

• DOI: 10.1109/icmts50340.2022.9898238
• 发表时间: 2022-03
• 期刊: 2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS)
• 作者: Jinbo Liu;R. Haroldson;Grigorii Verkhogliadov;Dayang Lin;Q. Gu;A. Zakhidov;W. Hu;C. D. Young

Schottky Barrier Height Tuning on Platinum-gated ZnO Metal-Semiconductor Field Effect Transistors by In-Situ Surface Modification

通过原位表面改性对铂栅 ZnO 金属半导体场效应晶体管进行肖特基势垒高度调节

• 发表时间: 2018
• 期刊: 2018 IEEE Semiconductor Interface Specialist Conference (SISC
• 作者: Rodriguez-Davila, R. A.;Chapman, R. A.;Mejia, I.;Quevedo-Lopez, M. A.;Young, C. D.
• 通讯作者: Young, C. D.

Electrical characterization of process induced effects on non-silicon devices

非硅器件工艺诱发效应的电气特性

• DOI: 10.1109/icicdt.2018.8399784
• 发表时间: 2018
• 期刊: 2018 International Conference on IC Design & Technology (ICICDT
• 作者: Young, Chadwin D.;Bolshakov, Pavel;Rodriguez-Davila, Rodolfo A.;Zhao, Peng;Khosravi, Ava;Mejia, Israel;Quevedo-Lopez, Manuel;Hinkle, Christopher L.;Wallace, Robert M.
• 通讯作者: Wallace, Robert M.

Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs

ZnO TFT 中热载流子和冷载流子注入的解卷积

• DOI: 10.1109/snw50361.2020.9131625
• 发表时间: 2020
• 期刊: 2020 IEEE Silicon Nanoelectronics Workshop (SNW
• 作者: Bolshakov, P.;Rodriguez-Davila, R.A.;Quevedo-Lopez, M.;Young, C.D.
• 通讯作者: Young, C.D.