Correlating The Chemistry and Process With The Impurity, Structure and Properties of Electrodeposited Cobalt for Advanced Interconnects

将先进互连件的化学和工艺与电沉积钴的杂质、结构和性能相关联

• 批准号: 1662332
• 负责人: Qiang Huang
• 金额: $ 29.87万
• 依托单位: University of Alabama Tuscaloosa
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-08-01 至 2021-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1662332&HistoricalAwards=false
• 关键词: Correlating; Chemistry; Process; Impurity; Structure

The network of metal wires in semiconductor chips are referred to as interconnects. These wires connect the transistors and carry the electronic signals for different functions of the circuitry. The resistivity of copper in state-of-the-art interconnects exponentially increases as the dimensions of semiconductor devices decrease. Cobalt has emerged as a top candidate among alternative materials to replace copper, and it will allow further advancement of semiconductor technology. However, the chemistry and processes that are needed for fabricating cobalt interconnects are still being developed, and there is insufficient information about how the chemistry and processing impact the structure and properties of such interconnects. This award will provide the fundamental research to fill this knowledge gap. The research will focus on how organic additives used in electrodeposition enable the fabrication of cobalt interconnects and control the incorporation of impurities in cobalt. More importantly, cobalt will be used as an example to provide a general understanding of how different impurity elements in electrodeposited metals impact the microstructures and electrical properties of the metal. The latter are important metrics for applications in advanced device fabrication. The research will be used to showcase student research activities in a new Electrochemical Society student chapter. In addition, a new class module on electrodeposition and microfabrication will be developed for an undergraduate level electrochemical engineering course.The synergistic interactions between multi-component organic additives that have been used in copper interconnect fabrication requires a long incubation time and faces challenges for interconnect structures with dimension below 30 nm. On the other hand, a newly discovered molecule, dioxime, results in an agitation-dependent strong suppression on cobalt deposition. It enables the preferential growth of cobalt at the bottom of the structure, where the electrolyte is stagnant, due to the lack of agitation. This project employs various derivatives of dioxime molecules to dissect the mechanisms of such suppression effects and how different impurities become incorporated into the deposited metals. Furthermore, local electrode atom probe will be used in conjunction with electron microscopy techniques and in-situ electrical measurements to understand the distribution of different impurity elements as well as their impacts on the microstructure evolution and resistivity change of cobalt. Template electrodeposited cobalt nanowires will be used to characterize electromigration of small lines without the use of advanced lithography techniques.

半导体芯片中的金属线网络被称为互连。这些导线连接晶体管并传送电路不同功能的电子信号。随着半导体器件尺寸的减小，现有技术互连中铜的电阻率呈指数增加。钴已成为替代铜的替代材料中的首选，它将使半导体技术进一步发展。然而，制造钴互连所需的化学和工艺仍在开发中，并且关于化学和工艺如何影响这种互连的结构和性质的信息不足。该奖项将提供基础研究，以填补这一知识空白。该研究将集中在电沉积中使用的有机添加剂如何使钴互连的制造和控制钴中杂质的掺入。更重要的是，钴将被用作一个例子，以提供对电沉积金属中的不同杂质元素如何影响金属的微观结构和电性能的一般理解。后者是先进器件制造中应用的重要指标。这项研究将用于展示学生的研究活动在一个新的电化学学会学生章。此外，一个新的类模块电沉积和微细加工将开发为本科水平的电化学工程course.The多组分有机添加剂之间的协同作用，已被用于铜互连制造需要一个长的孵化时间，并面临挑战的互连结构的尺寸小于30 nm的。另一方面，一种新发现的分子，二肟，结果在搅拌依赖于钴沉积的强烈抑制。它使得钴能够在结构的底部优先生长，其中电解质由于缺乏搅拌而停滞。该项目采用二肟分子的各种衍生物来剖析这种抑制作用的机制以及不同的杂质如何被并入沉积的金属中。此外，局部电极原子探针将结合电子显微镜技术和原位电学测量来了解不同杂质元素的分布以及它们对钴的微观结构演变和电阻率变化的影响。模板电沉积钴纳米线将被用来表征电迁移的小线，而不使用先进的光刻技术。

项目成果

Effects of Ethylenediamine Tetrakis(ethoxylate-block-propoxylate) Tetrol on Tin Electrodeposition

• DOI: 10.1016/j.electacta.2022.140476
• 发表时间: 2022-05
• 期刊: Electrochimica Acta
• 影响因子: 6.6
• 作者: Yang Hu;K. Ahammed;Q. Liu;Rashad Williams;Qiang Huang

Oscillatory Behavior in Cobalt Electrodeposition with 3-Mercapto-1-Propanesulfonate

• DOI: 10.1021/acs.jpcc.0c06877
• 发表时间: 2020-09
• 期刊: ECS Meeting Abstracts
• 作者: Yang Hu;Qiang Huang

Effects of Cyclohexane- Monoxime and Dioxime on the Electrodeposition of Cobalt

环己烷一肟和二肟对钴电沉积的影响

• DOI: 10.1016/j.electacta.2017.05.130
• 发表时间: 2017
• 期刊: Electrochimica Acta
• 影响因子: 6.6
• 作者: Lyons, T.W.;Huang, Q.
• 通讯作者: Huang, Q.

Ruthenium Electrodeposition from Water-in-Salt Electrolytes and the Influence of Tetrabutylammonium

• DOI: 10.1149/1945-7111/ab847e
• 发表时间: 2020-04
• 期刊: Journal of The Electrochemical Society
• 影响因子: 3.9
• 作者: W. Sides;Qiang Huang

Effects of Impurity Elements on Isothermal Grain Growth of Electroplated Copper

• DOI: 10.1149/2.0271807jes
• 发表时间: 2018-01-01
• 期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
• 影响因子: 3.9
• 作者: Huang, Q.