Workshop: 10th IW on Bulk Nitride Semiconductors (IWBNS-X): Growth, Properties and Devices; Sept 18 - 22, 2017; Espoo, Finland

非技术性说明：第十届块状氮化物半导体国际研讨会（IWBNS-X）于9月18日在芬兰埃斯波举行。- 2017年9月22日汇集了来自世界各地的研究人员，专注于理解，开发和应用半导体晶体生长技术。分享和讨论当前最先进的技术，极大地促进了科学和技术的发展，从而通过使这些材料的应用，如廉价的消毒工具，以减少感染或节能的电力转换，以减少能源浪费，从而影响社会。跨多个专业研究领域的科学思想的相互交流对各国的科学界产生了积极影响。本次研讨会为科学家提供了一个独特的机会，分享和激发新的想法，学习新的挑战和方向，探索和促进新的合作。所要求的资金支持来自美国的初级和高级研究人员的参与，技术说明：本次研讨会汇集了国际领先的科学家和工程师，他们都是宽带隙材料前沿领域的专家，包括器件研究和开发。领先的专家介绍了他们在块状氮化物生长领域的最新成就，控制其性能并将这些材料集成到光电或电子器件和应用中。本次研讨会的具体目标包括讨论与氮化物器件相关的关键科学挑战，同时促进国际合作。在研讨会上讨论的主题包括：体氮化物生长方法的发展，了解生长参数和材料性能之间的联系，控制掺杂均匀性和目标所需的掺杂水平，减少和缓解缺陷，在体材料的表征进展，实施先进的计算生长模型，（垂直）器件结构，和氮化物器件的同质外延生长。该研讨会通过分享成果和方法，激发新的想法和启动新的合作来推动该领域的发展-同时通过促进与国际专家的互动来促进参与者的职业发展。

Nontechnical Description: The 10th International Workshop on Bulk Nitride Semiconductors (IWBNS-X) held in Espoo, Finland, from Sep 18. - Sep. 22, 2017 brings together researchers from around the world focused on understanding, developing, and applying semiconductor crystal growth technologies. Sharing and discussing the current state-of-the-art greatly contributes to advancing science and technology, thereby impacting society by enabling applications of these materials, such as inexpensive disinfection tools to reduce infections or energy-efficient electrical power conversion to reduce energy waste. Cross-pollination of scientific ideas across multiple specialized research fields positively impacts the scientific community in various countries. This workshop provides a unique opportunity for scientists to share and stimulate new ideas, learn new challenges and directions, and explore and promote new collaborations. The requested funding supports the participation of both junior and senior researchers from the U.S., while also increasing access for women, to enable further education as well as development of collaborations with international experts.Technical Description: This workshop brings together internationally leading scientists and engineers who are experts, working at the frontiers of wide bandgap materials, including device research and development. Leading experts present their recent achievements in the field of bulk nitride growth, controlling their properties and integrating these materials into optoelectronic or electronic devices and applications. Specific goals of this workshop include discussions of critical scientific challenges related to enabling nitride devices, while also facilitating international collaborations. Topics discussed at the workshop include: development of bulk nitride growth methods, understanding connections between growth parameters and materials properties, controlling doping uniformity and targeting desired doping levels, defect reduction and mitigation, advances in characterization of bulk materials, implementing advanced computational growth models, (vertical) device structures, and homoepitaxial growth of nitride devices. The workshop helps advance the field by sharing results and methods, inspiring new ideas, and initiation of new collaborations - all while enhancing career development of the participants by facilitating interactions with international experts.