Workshop: 10th IW on Bulk Nitride Semiconductors (IWBNS-X): Growth, Properties and Devices; Sept 18 - 22, 2017; Espoo, Finland

研讨会：第 10 届块状氮化物半导体 IW (IWBNS-X)：生长、特性和器件；

• 批准号: 1745826
• 负责人: Siddha Pimputkar
• 金额: $ 0.5万
• 依托单位: Lehigh University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-09-01 至 2018-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1745826&HistoricalAwards=false
• 关键词: Workshop; 10th; IW; Bulk; Nitride

Nontechnical Description: The 10th International Workshop on Bulk Nitride Semiconductors (IWBNS-X) held in Espoo, Finland, from Sep 18. - Sep. 22, 2017 brings together researchers from around the world focused on understanding, developing, and applying semiconductor crystal growth technologies. Sharing and discussing the current state-of-the-art greatly contributes to advancing science and technology, thereby impacting society by enabling applications of these materials, such as inexpensive disinfection tools to reduce infections or energy-efficient electrical power conversion to reduce energy waste. Cross-pollination of scientific ideas across multiple specialized research fields positively impacts the scientific community in various countries. This workshop provides a unique opportunity for scientists to share and stimulate new ideas, learn new challenges and directions, and explore and promote new collaborations. The requested funding supports the participation of both junior and senior researchers from the U.S., while also increasing access for women, to enable further education as well as development of collaborations with international experts.Technical Description: This workshop brings together internationally leading scientists and engineers who are experts, working at the frontiers of wide bandgap materials, including device research and development. Leading experts present their recent achievements in the field of bulk nitride growth, controlling their properties and integrating these materials into optoelectronic or electronic devices and applications. Specific goals of this workshop include discussions of critical scientific challenges related to enabling nitride devices, while also facilitating international collaborations. Topics discussed at the workshop include: development of bulk nitride growth methods, understanding connections between growth parameters and materials properties, controlling doping uniformity and targeting desired doping levels, defect reduction and mitigation, advances in characterization of bulk materials, implementing advanced computational growth models, (vertical) device structures, and homoepitaxial growth of nitride devices. The workshop helps advance the field by sharing results and methods, inspiring new ideas, and initiation of new collaborations - all while enhancing career development of the participants by facilitating interactions with international experts.

非技术描述：第10届大块氮化物半导体国际研讨会（IWBNS-X）于9月18日在芬兰埃斯波举行。2017年9月22日，来自世界各地的研究人员齐聚一堂，专注于理解、开发和应用半导体晶体生长技术。分享和讨论当前最先进的技术，极大地促进了科学技术的进步，从而通过使这些材料的应用（例如减少感染的廉价消毒工具或减少能源浪费的节能电力转换）能够影响社会。科学思想在多个专业研究领域的交叉授粉对各国科学界产生积极影响。本次研讨会为科学家们提供了一个独特的机会来分享和激发新的想法，学习新的挑战和方向，探索和促进新的合作。所要求的资金支持来自美国的初级和高级研究人员的参与，同时也增加了妇女的机会，使她们能够继续接受教育，并发展与国际专家的合作。技术描述：本次研讨会汇集了国际领先的科学家和工程师，他们是专家，在宽带隙材料的前沿工作，包括器件研究和开发。领先的专家介绍了他们在大块氮化物生长，控制其性能以及将这些材料集成到光电或电子器件和应用领域的最新成就。本次研讨会的具体目标包括讨论与使能氮化物器件相关的关键科学挑战，同时也促进国际合作。在研讨会上讨论的主题包括：大块氮化物生长方法的发展，理解生长参数和材料特性之间的联系，控制掺杂均匀性和瞄准所需的掺杂水平，缺陷的减少和缓解，大块材料表征的进展，实现先进的计算生长模型，（垂直）器件结构，以及氮化器件的同外延生长。研讨会通过分享成果和方法、激发新想法和发起新的合作，帮助推动该领域的发展，同时通过促进与国际专家的互动，促进参与者的职业发展。