Workshop: 10th IW on Bulk Nitride Semiconductors (IWBNS-X): Growth, Properties and Devices; Sept 18 - 22, 2017; Espoo, Finland

非技术描述：第十届块状氮化物半导体国际研讨会(IWBNS-X)于2017年9月18日至9月22日在芬兰埃斯波举行，来自世界各地的研究人员聚集在一起，专注于了解、开发和应用半导体晶体生长技术。分享和讨论当前最先进的技术极大地促进了科学和技术的进步，从而通过使这些材料的应用能够影响社会，例如廉价的消毒工具来减少感染，或者节能的电力转换来减少能源浪费。科学思想在多个专门研究领域的交叉授粉对各国科学界产生了积极影响。这次研讨会为科学家提供了一个独特的机会，让他们分享和激发新的想法，学习新的挑战和方向，探索和促进新的合作。申请的资金支持美国初级和高级研究人员的参与，同时也增加了女性的机会，以实现继续教育以及发展与国际专家的合作。技术描述：这个研讨会汇集了国际领先的科学家和工程师，他们是专家，在宽带隙材料(包括器件研究和开发)的前沿工作。主要专家介绍了他们在块状氮化物生长领域的最新成就，控制其性能，并将这些材料集成到光电子或电子器件和应用中。该研讨会的具体目标包括讨论与启用氮化物装置有关的关键科学挑战，同时也促进国际合作。研讨会讨论的主题包括：块状氮化物生长方法的发展，了解生长参数和材料性能之间的关系，控制掺杂均匀性和确定所需的掺杂水平，缺陷的减少和缓解，块状材料表征的进展，实施先进的计算生长模型，(垂直)器件结构，以及氮化物器件的同质外延生长。讲习班通过分享成果和方法、启发新想法和启动新的合作来帮助推动该领域的发展，同时通过促进与国际专家的互动来促进参与者的职业发展。

Nontechnical Description: The 10th International Workshop on Bulk Nitride Semiconductors (IWBNS-X) held in Espoo, Finland, from Sep 18. - Sep. 22, 2017 brings together researchers from around the world focused on understanding, developing, and applying semiconductor crystal growth technologies. Sharing and discussing the current state-of-the-art greatly contributes to advancing science and technology, thereby impacting society by enabling applications of these materials, such as inexpensive disinfection tools to reduce infections or energy-efficient electrical power conversion to reduce energy waste. Cross-pollination of scientific ideas across multiple specialized research fields positively impacts the scientific community in various countries. This workshop provides a unique opportunity for scientists to share and stimulate new ideas, learn new challenges and directions, and explore and promote new collaborations. The requested funding supports the participation of both junior and senior researchers from the U.S., while also increasing access for women, to enable further education as well as development of collaborations with international experts.Technical Description: This workshop brings together internationally leading scientists and engineers who are experts, working at the frontiers of wide bandgap materials, including device research and development. Leading experts present their recent achievements in the field of bulk nitride growth, controlling their properties and integrating these materials into optoelectronic or electronic devices and applications. Specific goals of this workshop include discussions of critical scientific challenges related to enabling nitride devices, while also facilitating international collaborations. Topics discussed at the workshop include: development of bulk nitride growth methods, understanding connections between growth parameters and materials properties, controlling doping uniformity and targeting desired doping levels, defect reduction and mitigation, advances in characterization of bulk materials, implementing advanced computational growth models, (vertical) device structures, and homoepitaxial growth of nitride devices. The workshop helps advance the field by sharing results and methods, inspiring new ideas, and initiation of new collaborations - all while enhancing career development of the participants by facilitating interactions with international experts.