MRI: Development of a High Pressure Spatial CVD for Functional Materials

材料研究部和重大研究仪器计划颁发的这一奖项支持开发一种新的反应堆，使固态照明、电力电子系统和激光技术中的技术能够合成新材料。该设备将用于在极端条件下生长新材料，如高压、新元素集成和高度不同材料的集成。一名博士生和一名博士后将为设计、建造和优化反应堆及其相关工艺做出贡献，以生产这些非常规III-氮化物半导体和氧氮化物材料的新材料。这些新材料将对开发应用于能效和可再生能源、智能汽车和电力输送系统、光通信和物联网的设备技术产生影响。如果被证明成功，这种新的反应堆设计也将可扩展，以用于未来的技术转让。该项目将支持对下一代仪器科学家的培训。该奖项来自材料研究部和重大研究仪器计划，支持开发一种新型的化学气相(CVD)反应堆，以实现对高铟含量III-氮化物合金和氮氧化物的探索，这些合金和氧化物需要高压(100atm)来防止氮化物的分解，以及它们的设备应用。源物质/前体的空间分离和高反应堆压力这两个关键因素将结合在一种新型的高压空间CVD(HPS-CVD)中。直径2英寸的晶片连续旋转通过多个不同的源室，以用户控制的边界层厚度(1 Mm)混合所需的前体，防止预反应并缩短扩散距离。这样的反应器目前还不存在，它的发展将使由于分解限制而难以合成的功能材料的(外延)生长取得进展，最终实现新的器件设计和探索新的科学。正在开发的设备将与现有的生态系统很好地结合在一起，基于一种闭环和综合的方法，以满足III-氮化物半导体中常规材料系统和氧氮化物以外的基础科学和应用材料研究需求。具体地说，该设备支持的材料包括：高铟含量AlIn/AlInGaN/BingGaN基异质结构和生长，稀阴离子杂质III-氮化物合金和异质结构，稀土掺杂III-氮化物合金，以及功能氧氮化物。HPS-CVD的概念可以扩展到III-氮化物和氧氮化物材料之外，预计这一概念将在未来扩展到材料集成。

This award from the Division of Materials Research and the Major Research Instrumentation program supports the development of a new reactor for enabling the synthesis of new materials for technologies in solid state lighting, power electronic systems, and laser technologies. This equipment will be used to grow new materials under extreme conditions such as high pressure, new elements integration, and integration of highly dissimilar materials. One PhD student and a postdoctoral fellow will contribute to designing, building, and optimizing the reactor and its relevant processes for producing these new materials of unconventional III-nitride semiconductors and oxynitride materials. Such new materials will have impacts on developing device technologies with applications in energy efficiency and renewable energy, smart vehicle and power delivery systems, optical communications, and internet-of-things. This new reactor design will also be scalable for future technology transfer, if proven successful. The project will support the training of next generation of instrument scientists.This award from the Division of Materials Research and the Major Research Instrumentation program supports the development of a novel chemical vapor phase (CVD) reactor for enabling the exploration of high indium content III-nitride alloys and oxynitrides, which require high pressures ( 100 atm) to prevent decomposition of the nitride, and their device applications. Two key elements, spatial separation of source material/ precursors and high reactor pressures, will be combined in a novel high pressure spatial CVD (HPS-CVD). A ( 2 inch diameter) wafer is continuously rotated through multiple different source chambers leading to mixing of the desired precursors in the user controlled boundary layer thickness ( 1 mm) preventing pre-reactions and reducing diffusion distances. Such a reactor currently does not exist and its development will enable progress in (epitaxial) growth of hard to synthesize functional materials due to decomposition limitations ultimately enabling novel device designs and exploring new science. The equipment being developed will integrate well with the existing eco­ systems based on a closed-loop and integrated approach for addressing basic science and applied material research needs in the III-nitride semiconductors beyond conventional material systems and oxynitrides. Specifically, the materials enabled by this equipment include: high indium content AlInN/AlInGaN/BInGaN-based heterostructores and growth, dilute-anion impurity III-Nitride alloys and heterostructures, rare-earth doped III-nitride alloys, along with functional oxynitrides. The concept of HPS-CVD can be expanded beyond III-Nitride and oxynitride materials, and it is expected this concept will be extended for material integration in the future.