MRI: Development of a High Pressure Spatial CVD for Functional Materials

MRI：功能材料高压空间 CVD 的开发

• 批准号: 1726395
• 负责人: Siddha Pimputkar
• 金额: $ 52.4万
• 依托单位: Lehigh University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-09-01 至 2023-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1726395&HistoricalAwards=false
• 关键词: MRI; Development; Pressure; Spatial; CVD

This award from the Division of Materials Research and the Major Research Instrumentation program supports the development of a new reactor for enabling the synthesis of new materials for technologies in solid state lighting, power electronic systems, and laser technologies. This equipment will be used to grow new materials under extreme conditions such as high pressure, new elements integration, and integration of highly dissimilar materials. One PhD student and a postdoctoral fellow will contribute to designing, building, and optimizing the reactor and its relevant processes for producing these new materials of unconventional III-nitride semiconductors and oxynitride materials. Such new materials will have impacts on developing device technologies with applications in energy efficiency and renewable energy, smart vehicle and power delivery systems, optical communications, and internet-of-things. This new reactor design will also be scalable for future technology transfer, if proven successful. The project will support the training of next generation of instrument scientists.This award from the Division of Materials Research and the Major Research Instrumentation program supports the development of a novel chemical vapor phase (CVD) reactor for enabling the exploration of high indium content III-nitride alloys and oxynitrides, which require high pressures ( 100 atm) to prevent decomposition of the nitride, and their device applications. Two key elements, spatial separation of source material/ precursors and high reactor pressures, will be combined in a novel high pressure spatial CVD (HPS-CVD). A ( 2 inch diameter) wafer is continuously rotated through multiple different source chambers leading to mixing of the desired precursors in the user controlled boundary layer thickness ( 1 mm) preventing pre-reactions and reducing diffusion distances. Such a reactor currently does not exist and its development will enable progress in (epitaxial) growth of hard to synthesize functional materials due to decomposition limitations ultimately enabling novel device designs and exploring new science. The equipment being developed will integrate well with the existing eco­ systems based on a closed-loop and integrated approach for addressing basic science and applied material research needs in the III-nitride semiconductors beyond conventional material systems and oxynitrides. Specifically, the materials enabled by this equipment include: high indium content AlInN/AlInGaN/BInGaN-based heterostructores and growth, dilute-anion impurity III-Nitride alloys and heterostructures, rare-earth doped III-nitride alloys, along with functional oxynitrides. The concept of HPS-CVD can be expanded beyond III-Nitride and oxynitride materials, and it is expected this concept will be extended for material integration in the future.

该奖项来自材料研究部和主要研究仪器项目，支持开发一种新型反应堆，用于合成固态照明、电力电子系统和激光技术的新材料。该设备将用于在高压、新元素集成、高度不同材料集成等极端条件下生长新材料。一名博士生和一名博士后将参与设计、建造和优化反应器及其相关工艺，以生产这些非常规iii -氮化半导体和氮化氧材料的新材料。这些新材料将对能源效率和可再生能源、智能汽车和电力输送系统、光通信、物联网等领域的设备技术开发产生影响。如果被证明是成功的，这种新的反应堆设计也将用于未来的技术转让。该项目将支持培养下一代仪器科学家。该奖项来自材料研究部和主要研究仪器项目，支持开发一种新型化学气相（CVD）反应器，用于探索高铟含量iii -氮化物合金和氧氮化物，这些合金和氧氮化物需要高压（100 atm）来防止氮化物分解，以及它们的设备应用。两个关键要素，源物质/前体的空间分离和高反应器压力，将结合在一个新的高压空间CVD （HPS-CVD）。一个直径2英寸的晶圆在多个不同的源室中连续旋转，导致在用户控制的边界层厚度（1毫米）中混合所需的前驱体，防止预反应并减少扩散距离。这样的反应器目前还不存在，它的发展将使由于分解限制而难以合成的功能材料的（外延）生长取得进展，最终使新器件设计和探索新科学成为可能。正在开发的设备将与现有的基于闭环和集成方法的生态系统很好地集成，以解决iii -氮化物半导体中超越传统材料系统和氮氧化物的基础科学和应用材料研究需求。具体而言，该设备使能的材料包括：高铟含量的AlInN/AlInGaN/ bingan基异质结构和生长，稀阴离子杂质iii -氮化物合金和异质结构，稀土掺杂iii -氮化物合金，以及功能氧氮化物。HPS-CVD的概念可以扩展到iii -氮化物和氧化氮化物材料之外，并有望在未来将这一概念扩展到材料集成。

项目成果

Computational fluid dynamics modeling of a new high-pressure chemical vapor deposition reactor design

• DOI: 10.1016/j.jcrysgro.2021.126155
• 发表时间: 2021-04
• 期刊: Journal of Crystal Growth
• 影响因子: 1.8
• 作者: P. Yousefian;Siddha Pimputkar