EAGER: Diamond Delta Doped p FET

标题：一种用于未来高功率射频电子和高压开关的新型钻石晶体管摘要非技术：在过去的70年里，硅技术一直主导着固态电子产品。然而，基于硅的半导体技术无法处理下一代电源应用所预期的功率水平和开关频率。这个迫切的项目旨在创造高功率钻石基晶体管的原型，其性能在工作频率、功率处理能力、工作电压和工作环境方面超出了当前设备的范围。这种基于钻石的半导体器件可以消除目前AC-DC和DC-AC电转换过程中出现的大部分功率损耗，工作电压最高可比硅基器件高30倍，并且工作温度高于300°C，是硅电子设备所能承受的两倍。这些设备可能会给电力分配和调节带来革命性的变化，使电网更加通用和稳定，能够有效地访问非传统电源，提高电机驱动的效率，并改进微波和毫米波电源。这些装置中的许多将适合在恶劣的化学、生物、热或辐射环境中运行。这项研究将为金刚石基高压器件和高频器件提供原理证明，并将使金刚石基场效应管的精确设计成为可能，这将利用2D结构提高温度和电压不敏感度的优势。因此，这项研究将为宽禁带半导体金刚石技术的发展奠定基础，这种技术将优于目前的Si、SiC和GaN高压器件特性，并将具有更高的耐压和耐温性。技术：目前NSF急切的研究项目是展示一种基于钻石中二维空穴气体(2DHG)通道的新晶体管概念，从而将钻石2D传输通道的基础科学扩展到高压器件和高频功率器件。这一目标将通过实验结果与器件设计以及电荷传输的基本模型之间的关联来实现。我们提出的研究将研究用于高功率和高压应用的金刚石基场效应晶体管(FET)的基本器件物理。这些金刚石基场效应晶体管将利用多个亚表面纳米厚的掺硼沟道，这些沟道是通过化学气相沉积化学的精确控制而制备的。提出的计划是通过在生长在金刚石衬底上的单晶(100)金刚石外延层上制造二维导电通道来实现独特和创新的器件结构。这项研究是基于对钻石2D沟道器件中的三角洲掺杂和载流子沟道形成的基本了解，并将利用马里兰大学提供的独特设施。该研究方法包括基于优化沟道掺杂分布的双三角掺杂场效应晶体管的设计和制备，以及利用绝缘栅材料复合介质进行表面钝化。器件的电性能将在制造后进行表征。对ä掺杂沟道FET的研究还将包括深入的器件建模和性能的电学和物理表征。

TITLE: A New Diamond Transistor for Future High Power RF Electronics and High Voltage SwitchesABSTRACTNontechnical: Over the last seven decades, the silicon technology has dominated solid state electronics. However, the silicon-based semiconductor technology cannot handle the power levels and switching frequencies anticipated by the next generation of power applications. This EAGER project aims to create the prototype of high power diamond based transistors with properties that are beyond the scope of current devices in terms of operating frequency, power handling capacity, operating voltage, and operating environment. Such diamond based semiconductor devices can eliminate the majority of the power losses that currently occur during AC-to-DC and DC-to-AC electricial conversion, operate at voltages up to 30 times higher than silicon-based devices, and operate at temperatures above 300°C, twice what silicon electronics can tolerate. These devices may revolutionize power distribution and conditioning, allowing for a more versatile and stable power grid with efficient access to non-traditional power sources, to improved efficiencies for electric motor drives, and to improved microwave and millimeter wave sources. Many of these devices will be appropriate for operation in harsh chemical, biological, thermal, or radiological environments. This research will provide a proof of principle for diamond-based high voltage devices and high frequency devices and will also enable the accurate design of diamond based FETs, which will exploit advantages of increased temperature and voltage insensitivity of 2D structures. As a result, the research will lay the foundation for the development of wide bandgap (WBG) semiconductor diamond technologies, which will both outperform current Si, SiC and GaN high voltage device characteristics and will have much higher voltage and temperature tolerance. Technical: The present NSF EAGER research project is to demonstrate a new transistor concept based on two dimensional hole gas (2DHG) channels in diamond thereby extending the basic science of diamond 2D transport channels to high-voltage devices as well as high frequency power devices. This objective will be achieved through correlations between experimental results with device design as well as with basic models of charge transport. Our proposed research will investigate the fundamental device physics of diamond based field effect transistors (FETs) for high power and high voltage applications. These diamond based FETs will exploit multiple sub surface nanometer thick boron ä-doped channels which have been fabricated via the precision control of chemical vapor deposition chemistry. The proposed plan is to achieve unique and innovative device structures through the fabrication of two dimensional conduction channels on single crystal (100) diamond epitaxial layers grown on diamond substrates. The research is based on the fundamental understanding of the delta doping and carrier channel formation in diamond 2D channel devices, and will employ the unique facilities available at the University of Maryland. The research approach consists of the design and fabrication of double delta doped FETs based on an optimized channel dopant profile, as well as utilization of insulating gate materials complex dielectrics for surface passivation. Device electrical performance will be characterized after fabrication. Investigations on ä-doped channel FETs will also consist of in depth device modeling and electrical and physical characterization of performance.