CAREER: Exploiting Many-Particle Physics for Low-Energy Nanoelectronics
CAREER: Exploiting Many-Particle Physics for Low-Energy Nanoelectronics
批准号:
1752401
负责人:
James Teherani
金额:
$50.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2018
资助国家:
美国
项目状态:
已结题
起止时间:
2018-02-15 至 2021-02-28
中文摘要
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英文摘要
The incredible advancements of the microelectronics industry over the past 40 years have transformed room-sized super computers of the past into pocket-sized mobile devices of the present; however, the continuation of this incredible progress has slowed significantly as the ultimate limits of the metal-oxide-semiconductor field-effect transistor -- the workhorse of modern computing, storage, and communication systems -- are reached. Of particular importance is the inability for further energy reduction due to the fundamental physics of how conventional transistors operate. Novel ultra-low-energy transistors could empower a range of new applications -- from long-lasting 'micro-dust' sensors and implantable bioelectronics to cell phones that last a month on a single charge -- driving a new wave of technological innovation. The use of ultra-low-energy transistors in existing applications will decrease energy consumption providing significant economic benefits to society. As part of this work, an online series of short, engaging videos centered on current nanotechnology research will be created to promote science and engineering education to the general public.This work seeks to experimentally demonstrate a new type of transistor based on the many-particle physics of Auger generation to overcome the energy limitations of conventional transistors. This 'Auger FET' operates through gate modulation of Auger generation across a semiconductor heterojunction. The scope of the project includes (i) the fabrication of a van der Waals heterostructure comprised of layered two-dimensional materials due to their ability to form super-thin defect-free abrupt heterojunctions that enhance Auger generation and (ii) a theoretical effort to investigate how the geometry and doping of the device structure can be engineered to improve the Auger generation rate. The development of the Auger FET will expand multiple areas of significant scientific research by establishing the foundational physics for an innovative device concept. In doing so, the work will expand understanding of Auger generation and recombination processes in quantum structures, which is critical for improving efficiency in LEDs, lasers, and photodetectors since Auger phenomena decrease their performance.
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DOI:
10.1109/ted.2018.2851920
发表时间:
2018-07
期刊:
IEEE Transactions on Electron Devices
影响因子:
3.1
作者:
[Abhinandan Borah;Punnu Jose Sebastian;Ankur Nipane;J. Teherani]
通讯作者:
Abhinandan Borah;Punnu Jose Sebastian;Ankur Nipane;J. Teherani
DOI:
10.1063/1.5027520
发表时间:
2018-06-07
期刊:
JOURNAL OF APPLIED PHYSICS
影响因子:
3.2
作者:
[Nipane, Ankur, Zhang, Yefei, Teherani, James T.]
通讯作者:
Teherani, James T.
DOI:
10.1038/s41928-019-0245-y
发表时间:
2019-05-01
期刊:
NATURE ELECTRONICS
影响因子:
34.3
作者:
[Jung, Younghun, Choi, Min Sup, Teherani, James T.]
通讯作者:
Teherani, James T.
DOI:
10.1063/5.0032541
发表时间:
2021-01-14
期刊:
JOURNAL OF APPLIED PHYSICS
影响因子:
3.2
作者:
[Bechhofer, Adina R., Ueda, Akiko, Teherani, James T.]
通讯作者:
Teherani, James T.
海外基金