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CAREER: Exploiting Many-Particle Physics for Low-Energy Nanoelectronics

职业：利用多粒子物理学实现低能纳米电子学

基本信息

批准号：
1752401
负责人：
James Teherani
金额：
$ 50万
依托单位：
Columbia University
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2018
资助国家：
美国
起止时间：
2018-02-15 至 2021-02-28
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1752401&HistoricalAwards=false
关键词：
CAREER Exploiting Many Particle Physics

项目摘要

The incredible advancements of the microelectronics industry over the past 40 years have transformed room-sized super computers of the past into pocket-sized mobile devices of the present; however, the continuation of this incredible progress has slowed significantly as the ultimate limits of the metal-oxide-semiconductor field-effect transistor -- the workhorse of modern computing, storage, and communication systems -- are reached. Of particular importance is the inability for further energy reduction due to the fundamental physics of how conventional transistors operate. Novel ultra-low-energy transistors could empower a range of new applications -- from long-lasting 'micro-dust' sensors and implantable bioelectronics to cell phones that last a month on a single charge -- driving a new wave of technological innovation. The use of ultra-low-energy transistors in existing applications will decrease energy consumption providing significant economic benefits to society. As part of this work, an online series of short, engaging videos centered on current nanotechnology research will be created to promote science and engineering education to the general public.This work seeks to experimentally demonstrate a new type of transistor based on the many-particle physics of Auger generation to overcome the energy limitations of conventional transistors. This 'Auger FET' operates through gate modulation of Auger generation across a semiconductor heterojunction. The scope of the project includes (i) the fabrication of a van der Waals heterostructure comprised of layered two-dimensional materials due to their ability to form super-thin defect-free abrupt heterojunctions that enhance Auger generation and (ii) a theoretical effort to investigate how the geometry and doping of the device structure can be engineered to improve the Auger generation rate. The development of the Auger FET will expand multiple areas of significant scientific research by establishing the foundational physics for an innovative device concept. In doing so, the work will expand understanding of Auger generation and recombination processes in quantum structures, which is critical for improving efficiency in LEDs, lasers, and photodetectors since Auger phenomena decrease their performance.

过去 40 年来，微电子行业取得了令人难以置信的进步，将过去的房间大小的超级计算机变成了现在的袖珍移动设备；然而，随着金属氧化物半导体场效应晶体管（现代计算、存储和通信系统的主力）达到极限，这种令人难以置信的进步的持续速度已显着放缓。特别重要的是，由于传统晶体管工作方式的基本物理原理，无法进一步降低能耗。新型超低能耗晶体管可以推动一系列新应用——从持久的“微尘”传感器和植入式生物电子学到一次充电可持续使用一个月的手机——推动新一波的技术创新。在现有应用中使用超低能耗晶体管将降低能耗，为社会带来显着的经济效益。作为这项工作的一部分，我们将制作一系列以当前纳米技术研究为中心的引人入胜的在线短视频，以向公众推广科学和工程教育。这项工作旨在通过实验展示一种基于俄歇发电多粒子物理学的新型晶体管，以克服传统晶体管的能量限制。这种“俄歇 FET”通过半导体异质结上俄歇发电的栅极调制来工作。该项目的范围包括（i）制造由层状二维材料组成的范德瓦尔斯异质结构，因为它们能够形成超薄无缺陷突变异质结，从而增强俄歇产生率；（ii）研究如何设计器件结构的几何形状和掺杂以提高俄歇产生率的理论工作。俄歇 FET 的开发将通过为创新器件概念奠定基础物理学，拓展多个重要科学研究领域。在此过程中，这项工作将扩大对量子结构中俄歇产生和复合过程的理解，这对于提高 LED、激光器和光电探测器的效率至关重要，因为俄歇现象会降低其性能。