The influence of doping and annealing onto the lattice dynamics, band structure and free charge carrier properties in monoclinic gallium aluminum oxide semiconductor alloys

掺杂和退火对单斜晶系铝镓氧化物半导体合金晶格动力学、能带结构和自由载流子性能的影响

• 批准号: 1808715
• 负责人: Mathias Schubert
• 金额: $ 43.01万
• 依托单位: University of Nebraska-Lincoln
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2018
• 资助国家: 美国
• 起止时间: 2018-07-01 至 2022-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1808715&HistoricalAwards=false
• 关键词: influence; doping; annealing; onto; lattice

Non-technical Description: This project provides a scientific basis for development of novel semiconductor material for electronic devices that could enable real-time low-loss electric power distribution capability within the electric grid. Such distribution can be controlled by high-power electronic devices capable of switching and distributing high voltages and loads. As a new class of semiconductor materials, gallium aluminum oxide emerges as a promising candidate for fabrication of such devices. This project investigates the influence of doping and composition onto the resulting electronic properties of the material by employing a variety of theoretical and experimental characterization techniques. This project offers various training opportunities for undergraduate and graduate students, along with various outreach activities targeting K-12 students, teachers, minorities and underrepresented groups. The project includes Nebraska high-school and middle-school student summer research programs and after-school science education activities, and annual public Social and academic outreach programs are expanded to include demonstrations and Sunday presentations at the University of Nebraska State Museum on power electronics and the electric grid of the future for elementary to high school students.Technical Description: The project focuses on a fundamental material investigation of novel wide-bandgap material with potential in high power electronic applications. The research investigates the effect of doping and annealing on the electronic properties of semiconductor aluminum gallium oxide alloys with monoclinic symmetry. The main objectives are to determine the phonon, band structure and free charge carrier effective mass and mobility parameters, including their anisotropy, as a function of: (i) aluminum composition variation, (ii) tin, germanium and silicon doping concentrations and (iii) annealing under different gaseous environments in wide temperature ranges. The project combines computational theory and experimental characterization. Density functional theory calculations are performed to predict the effects of doping (defects) and alloying and to guide the applications of the experimental techniques - generalized spectroscopic ellipsometry and the optical Hall effect - to determine the electronic, phonon and transport properties in single crystals and heterostructures of low-symmetry semiconductors. Additional techniques include Raman spectroscopy and in-situ high-temperature studies. This research contributes to the technological development of high power electronic devices based on novel monoclinic semiconductor materials and provides education and research training possibilities for graduate students and young researchers in advanced semiconductor technology in culturally diverse environment.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术描述：该项目为开发用于电子设备的新型半导体材料提供了科学依据，这些电子设备可以实现电网内实时低损耗的电力分配能力。这种分配可以通过能够切换和分配高电压和负载的大功率电子设备来控制。镓铝氧化物作为一种新型的半导体材料，是一种很有前途的半导体材料。该项目通过采用各种理论和实验表征技术，研究掺杂和组成对材料电子特性的影响。该项目为本科生和研究生提供各种培训机会，同时沿着针对K-12学生、教师、少数民族和代表性不足群体的各种外联活动。该项目包括内布拉斯加州高中和中学生暑期研究计划和课后科学教育活动，以及年度公共社会和学术推广计划，扩展到包括在内布拉斯加州州立大学博物馆为小学到高中学生举办的电力电子和未来电网演示和周日演讲。技术描述：该项目的重点是对具有高功率电子应用潜力的新型宽带隙材料进行基础材料研究。研究了掺杂和退火对单斜对称半导体铝镓氧化物合金电子性质的影响。主要目的是确定声子，能带结构和自由载流子的有效质量和迁移率参数，包括它们的各向异性，作为一个函数：（i）铝成分的变化，（ii）锡，锗和硅掺杂浓度和（iii）在不同的气体环境下，在宽的温度范围内退火。该项目结合了计算理论和实验表征。进行密度泛函理论计算来预测掺杂（缺陷）和合金化的影响，并指导实验技术的应用-广义光谱椭圆偏振法和光学霍尔效应-以确定低对称半导体的单晶和异质结构中的电子，声子和输运性质。其他技术包括拉曼光谱和原位高温研究。该研究为基于新型单斜半导体材料的大功率电子器件的技术开发做出了贡献，并为研究生和年轻研究人员在文化多样性环境中提供了先进半导体技术的教育和研究培训机会。该奖项反映了NSF的法定使命，并通过使用基金会的智力价值和更广泛的影响审查进行评估，被认为值得支持的搜索.

项目成果

Band-to-band transitions and critical points in the near-infrared to vacuum ultraviolet dielectric functions of single crystal urania and thoria

单晶铀和钍的近红外到真空紫外介电函数的带间跃迁和临界点

• DOI: 10.1063/1.5087059
• 发表时间: 2019
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Mock, Alyssa;Dugan, Christina;Knight, Sean;Korlacki, Rafał;Mann, J. Matthew;Kimani, Martin M.;Petrosky, James C.;Dowben, Peter A.;Schubert, Mathias
• 通讯作者: Schubert, Mathias

Zinc gallate spinel dielectric function, band-to-band transitions, and Γ-point effective mass parameters

• DOI: 10.1063/5.0043686
• 发表时间: 2021-03
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: M. Hilfiker;M. Stokey;R. Korlacki;U. Kılıç;Z. Galazka;K. Irmscher;S. Zollner;M. Schubert

Infrared-active phonon modes in single-crystal thorium dioxide and uranium dioxide

• DOI: 10.1063/1.5143724
• 发表时间: 2020-03
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: S. Knight;R. Korlacki;Christina L. Dugan;J. Petrosky;A. Mock;P. Dowben;J. Matthew Mann;M. Kimani;M. Schubert

The 2022 magneto-optics roadmap

• DOI: 10.1088/1361-6463/ac8da0
• 发表时间: 2022-08
• 期刊: Journal of Physics D: Applied Physics
• 作者: A. Kimel;A. Zvezdin;Sangeeta Sharma;S. Shallcross;Nuno Alves de Sousa;A. García-Martín;G. Salvan

Lattice dynamics of orthorhombic NdGaO3

斜方 NdGaO3 的晶格动力学

• DOI: 10.1103/physrevb.99.184302
• 发表时间: 2019
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: Mock, A.;Korlacki, R.;Knight, S.;Stokey, M.;Fritz, A.;Darakchieva, V.;Schubert, M.
• 通讯作者: Schubert, M.